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    A63 TRANSISTOR Search Results

    A63 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    A63 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR A63

    Abstract: No abstract text available
    Text: WJ-A63/SMA63 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. MEDIUM THIRD ORDER I.R: +15 dBm (TYR) HIGH GAIN: 16 dB (TYP.) Specifications* Outline Drawings A63 0.460 r , (11.41) Guaranteed Typical


    OCR Scan     		WJ-A63/SMA63 50-ohm TRANSISTOR A63 PDF

    pt 100 - to92

    Abstract: pt 100 to92 MPS-A63 MPS-A64 MPSA63
    Text: G Ql E SOLID STATE 3875081 G E SOLID STATE Signal Transistors_ DE § 3û750âl □G17tn G 01E 17990 1 D _ 2.7 MPS-A63, MPS-A64 Silicon Darlington Transistors TO-92 The GE/RCA MPS-A63 and A64 are planar epitaxial passivated PNP silicon Darlington transistors designed for preamplitier input applications where high im pedance is a


    OCR Scan     		MPS-A63, MPS-A64 MPS-A63 MPS-A63 100mA 100kHz) 300ns pt 100 - to92 pt 100 to92 MPS-A64 MPSA63 PDF

    TRANSISTOR A63

    Abstract: No abstract text available
    Text: Cascadable Amplifier 5 to 1000 MHz A63/ SMA63 V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance


    Original     		SMA63 MIL-STD-883 SMA63 TRANSISTOR A63 PDF

    TRANSISTOR A63

    Abstract: a63 TRANSISTOR SMA63 CA63
    Text: A63 / SMA63 Cascadable Amplifier 5 to 1000 MHz Rev. V3 Features Product Image • LOW NOISE: 3.0 dB TYP. • MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) • HIGH GAIN: 16 dB (TYP.) Description The A63 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance


    Original     		SMA63 MIL-STD-883 TRANSISTOR A63 a63 TRANSISTOR SMA63 CA63 PDF

    Untitled

    Abstract: No abstract text available
    Text: A63/SMA63 5 TO 1000 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) · HIGH GAIN: 16 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		A63/SMA63 SMA63 PDF

    TRANSISTOR A63

    Abstract: SMA63 diode a63 CA63 a63 TRANSISTOR
    Text: A63/SMA63 5 TO 1000 MHz CASCADABLE AMPLIFIER • LOW NOISE: 3.0 dB TYP. · MEDIUM THIRD ORDER I.P.: +15 dBm (TYP.) · HIGH GAIN: 16 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 12/00)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		A63/SMA63 SMA63 TRANSISTOR A63 SMA63 diode a63 CA63 a63 TRANSISTOR PDF

    WJ-A63

    Abstract: bc 162 transistor Transistor BC 227 WJ-CA63 wjca63
    Text: uuJ A63 / SMA63 5 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 3.0 dB TYP. MEDIUM THIRD ORDER I.R: +15 dBm (TYP.) HIGH GAIN: 16 dB (TYR) • ¡■ B B lM g g » » miKKKtM Specifications* Characteristics Outline Drawings


    OCR Scan     		SMA63 1-800-WJ1-4401 WJ-A63 bc 162 transistor Transistor BC 227 WJ-CA63 wjca63 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		SGA-6386 EDS-100614 PDF

    A6331

    Abstract: No abstract text available
    Text: Product Description Stanford Microdevices’ SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		SGA-6389 SGA-6389 DC-4500 EDS-100620 A6331 PDF

    TRANSISTOR A63

    Abstract: 5894 A63 marking amplifier DC-3000 SGA-6386
    Text: Product Description Stanford Microdevices’ SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		SGA-6386 SGA-6386 DC-3000 EDS-100614 TRANSISTOR A63 5894 A63 marking amplifier PDF

    TRANSISTOR A63

    Abstract: EDS-100620 SGA-6389 a63 TRANSISTOR
    Text: Product Description Stanford Microdevices’ SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		SGA-6389 SGA-6389 DC-4000 EDS-100620 TRANSISTOR A63 a63 TRANSISTOR PDF

    2SC42

    Abstract: 2SC4252 Transistor MAV 1 kps6
    Text: TO SH IBA 2SC4252 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4252 Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS COMMON COLLECTOR 2.1 ¿ 0 . 1 • Transition Frequency is High and Dependent on Current Excellently. 1 .25Ì0.1 in ID o MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SC4252 2SC42 SC-70 2SC4252 Transistor MAV 1 kps6 PDF

    philips 3h1 ferrite material

    Abstract: ferroxcube handbook old ferrite ferroxcube Ee core 3H1 ferroxcube philips ferroxcube 4c65 ferroxcube 3E1 3h1 ferrite material philips 3f3 ferrite philips 3f3 ferrite toroid philips p14/8 3h1
    Text: PRODUCT SELECTION GUIDE 2001 A Y AG E O C O M PA N Y List of contents page This Selection Guide offers an overview of the product ranges made by FERROXCUBE It contains short-form data for quick selection by development engineers and offers an overview for


    Original     		PDF

    Selection Guide

    Abstract: FERROXCUBE ferroxcube 31 toroid core SP 5001 IC INVERTER inverter ccfl SP 5001 IC INVERTER ferroxcube handbook old ferrite philips etd34 ferrite part number Rod 3B1 smooth l 7251 3.1 etd29 14 pin vertical bobbins
    Text: PRODUCT SELECTION GUIDE 2003 A Y A G E O C O M P A N Y List of contents List of contents continued page page General introduction Application matrix 2 8 Power conversion and Signal processing Materials and applications Bobbins and accessories Integrated Inductive Components (IIC)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted


    OCR Scan     		MPSA63 MMBTA63 PZTA63 MPSA64 MPSA63 MMBTA63 PDF

    TRANSISTOR A63

    Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
    Text: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.


    Original     		MPSA63 MMBTA63 PZTA63 OT-23 OT-223 MPSA64 MPSA63 MMBTA63 TRANSISTOR A63 sot23 A63 a63 TRANSISTOR PZTA63 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted


    OCR Scan     		MPSA63 MMBTA63 PZTA63 MPSA63 MMBTA63 PSA64 PDF

    TRANSISTOR A63

    Abstract: sot23 A63 FAIRCHILD SOT-223 MARK MPSA64 MMBTA63 MPSA63 PZTA63
    Text: S E M IC O N D U C T O R tm MMBTA63 SOT-23 PZTA63 B / PZTA63 TO-92 / MMBTA63 MPSA63 SOT-223 M a rk : 2U PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61.


    OCR Scan     		MPSA63 MMBTA63 OT-23 PZTA63 OT-223 MPSA64 TRANSISTOR A63 sot23 A63 FAIRCHILD SOT-223 MARK MMBTA63 MPSA63 PZTA63 PDF

    a42e

    Abstract: IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn
    Text: Small Signal Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless


    Original     		OD-923 OT-923 OT-953 OD-523 OT-523 OT-563 OD-323 OT-323 OT-363 OD-123 a42e IC 7410 sot-89 A63 CZT900K npn 2907A 2222a A77 SOT23 2222ae A92E 3906 npn PDF

    a872 TRANSISTOR equivalent

    Abstract: WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F
    Text: Application Information for Thin Film Cascadable Amplifiers INSIDE THE TO-8 AMPLIFIER: BASIC CIRCUIT CONCEPTS This discussion covers the basic circuit concept behind the cascadable amplifier and details some of the techniques that are used to maintain hardware stability in the


    OCR Scan     		HP340B a872 TRANSISTOR equivalent WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F PDF

    2SC4247

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		2SC4247 SC-70 2SC4247 PDF

    MPSA63

    Abstract: TRANSISTOR A63 MMBTA63 MPSA64 PZTA63 Transistor MPSA63
    Text: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		MMBTA63 PZTA63 OT-23 OT-223 MPSA64 MPSA63 TRANSISTOR A63 MMBTA63 PZTA63 Transistor MPSA63 PDF

    2u91

    Abstract: MA62
    Text: DEjb3b7B5M b4 M O T O R O L A SC Í X S T R S / R F> •*^ DDb7331 B | " T -29-29 .v. MOTOROLA M M A 6 2 v .*,^ j t M M A 6 3 W S E M I C O N D U C T P R S - -• -f-.P’i î . BOX 2Û912 • PHÖENIX, A R IZO N A 8503§ ; MEDIUM VOLTAGE PNP SILICON DARLINGTON TRANSISTORS


    OCR Scan     		DDb7331 2u91 MA62 PDF

    BOX70

    Abstract: 71T2 PT7933 B0221 ESM3000 SS2022 b0220 74T2 Solitron
    Text: POWER SILICON NPN Item Number Part Number Manufacturer Ic Max A (V) fT hFE V(BR)CEO Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) PD Max (W) Toper Max (Oe) Package Style Additional Transistors, (Co nt' d) 5 10 B0221 B0221 B0221 2N1644 HSE912 ST403 B0795


    Original     		B0221 2N1644 HSE912 ST403 B0795 SS2005 BOX70 71T2 PT7933 ESM3000 SS2022 b0220 74T2 Solitron PDF