Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    A7 TRANSISTOR SMD Search Results

    A7 TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A7 TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


    Original     		HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor PDF

    A7 SMD TRANSISTOR

    Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
    Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		KO3407 OT-23 A7 SMD TRANSISTOR SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7 PDF

    transistor D613 equivalent

    Abstract: TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567
    Text: 123455678 LIN-Slave for relay and DC motor control 9ABCDEAF8 Microcontroller: MLX16x8 RISC CPU o o o 16 bit RISC-CPU Co-processor for fast multiplication and division In-circuit debug and emulation Memories o o o 32 kByte Flash with ECC 2 kByte RAM 384 Byte EEPROM with ECC for customer purpose


    Original     		MLX16x8 J2602, ISO/TS16949 ISO14001 MLX81150 transistor D613 equivalent TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567 PDF

    HX6256

    Abstract: D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead HX6256 D-10 PDF

    nmos dynamic ram 6256

    Abstract: HX6256 D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead nmos dynamic ram 6256 HX6256 D-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		1x106 1x1014 1x109 1x1011 1x10-10 HX6256 28-Lead MIL-STD-1835, PDF

    SMD TRANSISTOR MARKING A7

    Abstract: PBSS8110D PBSS9110D MOSFET TRANSISTOR SMD MARKING CODE js TRANSISTOR SMD MARKING CODES a7
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 13 July 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D SMD TRANSISTOR MARKING A7 PBSS8110D MOSFET TRANSISTOR SMD MARKING CODE js TRANSISTOR SMD MARKING CODES a7 PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D PDF

    PBSS8110D

    Abstract: PBSS9110D SC74 marking 345
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D PBSS8110D SC74 marking 345 PDF

    Untitled

    Abstract: No abstract text available
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		1x106 1x1014 1x1011 1x1012 1x10-10 HX6356 36-Lead PDF

    honeywell sn f10

    Abstract: HX6356 A12 SMD TRANSISTOR Honeywell load cell
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 honeywell sn f10 HX6356 A12 SMD TRANSISTOR Honeywell load cell PDF

    HX6356

    Abstract: No abstract text available
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 HX6356 PDF

    HX84050

    Abstract: No abstract text available
    Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2


    Original     		HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050 PDF

    smd transistor marking a7

    Abstract: smd TRANSISTOR code marking A7 TRANSISTOR SMD MARKING CODE a7 NXP SOT1061 Transistors TRANSISTOR SMD MARKING CODES a7
    Text: PBSS4630PA 30 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PBSS4630PA OT1061 PBSS5630PA. smd transistor marking a7 smd TRANSISTOR code marking A7 TRANSISTOR SMD MARKING CODE a7 NXP SOT1061 Transistors TRANSISTOR SMD MARKING CODES a7 PDF

    smd transistor A6

    Abstract: y4 smd transistor y6 smd transistor Transistor SMD a7 Y5 smd transistor smd transistor A7 y1 smd transistor smd transistor A5 A7 SMD TRANSISTOR 5962R9672602TXC
    Text: ACTS541T Data Sheet July 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		ACTS541T 100kRAD ACTS541T smd transistor A6 y4 smd transistor y6 smd transistor Transistor SMD a7 Y5 smd transistor smd transistor A7 y1 smd transistor smd transistor A5 A7 SMD TRANSISTOR 5962R9672602TXC PDF

    smd transistor A6

    Abstract: y4 smd transistor A7 SMD TRANSISTOR smd transistor A5 y6 smd transistor smd a5 gnd smd transistor A7 smd transistor y5 transistor SMD a6 smd transistor A6 3
    Text: ACTS541T Semiconductor Data Sheet January 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		ACTS541T 100kRAD ACTS541T 1-800-4-HARRIS smd transistor A6 y4 smd transistor A7 SMD TRANSISTOR smd transistor A5 y6 smd transistor smd a5 gnd smd transistor A7 smd transistor y5 transistor SMD a6 smd transistor A6 3 PDF

    transistor SMD Y1

    Abstract: y4 smd transistor y1 smd transistor y6 smd transistor smd transistor A6 A7 SMD TRANSISTOR 5962R9672602TRC 5962R9672602TXC ACTS541DTR-02 ACTS541KTR-02
    Text: ACTS541T TM Data Sheet July 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Features • QML Class T, Per MIL-PRF-38535 Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		ACTS541T FN4612 MIL-PRF-38535 100kRAD ACTS541T transistor SMD Y1 y4 smd transistor y1 smd transistor y6 smd transistor smd transistor A6 A7 SMD TRANSISTOR 5962R9672602TRC 5962R9672602TXC ACTS541DTR-02 ACTS541KTR-02 PDF

    A7 SMD TRANSISTOR

    Abstract: SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8K x 8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process,


    Original     		HS-6664RH HS-6664RH A7 SMD TRANSISTOR SMD Transistor A12 smd transistor A11 A9 transistor SMD SMD a7 Transistor smd transistor A7 smd transistor A8 5962F9562601VYC SMD A8 Transistor smd a10 PDF

    smd transistor A6 3

    Abstract: 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR ACTS245T b3 smd transistor
    Text: ACTS245T Data Sheet July 1999 Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended


    Original     		ACTS245T 100kRAD ACTS245T MIL-PRF-38535 smd transistor A6 3 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR b3 smd transistor PDF

    smd transistor A6

    Abstract: SMD TRANSISTOR B7 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR ACTS245T smd transistor A7 smd transistor A6 3
    Text: ACTS245T TM Data Sheet July 1999 Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended


    Original     		ACTS245T 100kRAD ACTS245T FN4611 MIL-PRF-38535 smd transistor A6 SMD TRANSISTOR B7 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR smd transistor A7 smd transistor A6 3 PDF

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		1x106rad 1x101 1x109 HX6256 28-Lead CDIP2-T28 PDF

    LD 757 ps

    Abstract: smd code cfa
    Text: SIEMENS BUZ104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L l'os 50 V fa 17.5 A ffesíon


    OCR Scan     		O-220 BUZ104L C67078-S1358-A2 PT05155 LD 757 ps smd code cfa PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		1x106rad 1x101 1x109 HX6256 28-Lead GQG1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		HX6356 1x106rad 1x101 PDF