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    A7 W SMD TRANSISTOR Search Results

    A7 W SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A7 W SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A7 SMD TRANSISTOR

    Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
    Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF KO3407 OT-23 A7 SMD TRANSISTOR SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


    Original     		PDF HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC

    samsung s3c2440 user manual

    Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
    Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice


    Original     		PDF S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet

    smd code A9 3 pin transistor

    Abstract: smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9
    Text: High Speed Converter Evaluation Platform HSC-ADC-EVALC FEATURES PRODUCT HIGHLIGHTS Xilinx Virtex-4 FPGA-based buffer memory board Used for capturing digital data from high speed ADC evaluation boards to simplify evaluation 64 kB FIFO depth Parallel input at 644 MSPS SDR and 800 MSPS DDR


    Original     		PDF ADP3339AKCZ-3 SKHHAKA010 CBSB-14-01 DPS050300U-P5P-TK ADR512ART ERJ-2GEJ622X ERJ-2GE0R00X ERJ-2GEJ133X ERJ-2GEJ102X ECJ-0EB0J224K smd code A9 3 pin transistor smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9

    PDM41257SA15D

    Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
    Text: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in


    Original     		PDF MIL-STD-883 PDM41257SA15D Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256

    Untitled

    Abstract: No abstract text available
    Text: SPIO-4 Precision Signal-Path Controller Board Users' Guide December 2010 Table of Contents 1.0 SPIO-4 System Overview . 3 1.0 SPIO-4 System Overview . 3


    Original     		PDF

    ta 6203

    Abstract: 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 HM-65262
    Text: HM-65262 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced


    Original     		PDF HM-65262 70/85ns HM-65262 ta 6203 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9

    smd transistor A13

    Abstract: A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
    Text: HM-65262 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced


    Original     		PDF HM-65262 70/85ns HM-65262 smd transistor A13 A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9

    6R190

    Abstract: 6R190C6 6r190c IPW60R190
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190 6R190C6 6r190c IPW60R190

    6R190C6

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6

    6R190C6

    Abstract: IPI60R190C6 IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 MOSFET TRANSISTOR SMD MARKING CODE 11 6R190
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 IPI60R190C6 IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 MOSFET TRANSISTOR SMD MARKING CODE 11 6R190

    6R190C6

    Abstract: 6r190 6r190c to247 pcb footprint transistor SMD MARKING CODE 14
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 6r190 6r190c to247 pcb footprint transistor SMD MARKING CODE 14

    6R190C6

    Abstract: marking code ll SMD Transistor SMD TRANSISTOR MARKING 9D 6r190 d 998 transistor circuit smd transistor marking LL IPA60R190C6 IPB60R190C6 IPI60R190C6 IPP60R190C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 6R190C6 marking code ll SMD Transistor SMD TRANSISTOR MARKING 9D 6r190 d 998 transistor circuit smd transistor marking LL IPA60R190C6 IPB60R190C6 IPI60R190C6 IPP60R190C6

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		PDF IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6

    Untitled

    Abstract: No abstract text available
    Text: Philips Components Datasheet status Product specification date of issue April 1991 B D S201/203/77 NPN silicon epitaxial base power transistors DESCRIPTION PINNING-SOT223 PIN NPN silicon epitaxial base transistors DESCRIPTION in a miniature SMD envelope 1


    OCR Scan     		PDF S201/203/77 PINNING-SOT223 OT223) BDS202/204/78. BDS201/203/77 bfci53T31 OT223.

    Untitled

    Abstract: No abstract text available
    Text: HS-6664RH-T Data Sheet July 1999 File Number Radiation Hardened 8 K x 8 CMOS PROM Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HS-6664RH-T Semiconductor December 1998 Data Sheet File Num ber Radiation Hardened 8 K x 8 CMOS PROM Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T 1-800-4-HARRIS

    E2 SMD Transistor

    Abstract: SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883
    Text: m W H A R R HM-65642 I S S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM January 1992 Description Features Full CMOS Design Six Transistor Memory Cell Low Standby Supply C u rre n t. . 100|oA Low Operating Supply C urrent.


    OCR Scan     		PDF HM-65642 HM-65642 80C86 80C88 E2 SMD Transistor SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883

    LD 757 ps

    Abstract: smd code cfa
    Text: SIEMENS BUZ104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dw/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L l'os 50 V fa 17.5 A ffesíon


    OCR Scan     		PDF O-220 BUZ104L C67078-S1358-A2 PT05155 LD 757 ps smd code cfa

    Untitled

    Abstract: No abstract text available
    Text: ACTS541T D a ta s h e e t Ju ly 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF ACTS541T 100kRAD MIL-PRF-38535 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: ACTS541T Semiconductor January 1999 Data Sheet Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF ACTS541T 100kRAD MIL-PRF-38535 1-800-4-HARR

    Untitled

    Abstract: No abstract text available
    Text: HCTS245T Data Sheet July 1999 Radiation Hardened Octal Bus Transceiver, Three-State, Non-inverting Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF HCTS245T 100kRAD MIL-PRF-38535 HCTS245T 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HCTS245T Semiconductor D ecem b er 1998 D ata S h eet Radiation Hardened Octal Bus Transceiver, Three-State, Non-inverting Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF HCTS245T 100kRAD MIL-PRF-38535 1-800-4-HARR

    Untitled

    Abstract: No abstract text available
    Text: HCTS245T Semiconductor D e c e m b e r 1998 D a ta S h e e t Radiation Hardened Octal Bus Transceiver, Three-State, Non-inverting H arris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    OCR Scan     		PDF HCTS245T 100kRAD HCTS245T 1-800-4-HARR