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    BF966

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE ObE D • ■ bbS3T31 aQ12c17E 0 ■ ■ BF966 T'3 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		bbS3T31 aQ12c BF966 BF966 PDF