Untitled
Abstract: No abstract text available
Text: TDA1308 Class-AB stereo headphone driver Rev. 5 — 14 March 2011 Product data sheet 1. General description The TDA1308 is an integrated class-AB stereo headphone driver contained in an SO8 or a TSSOP8 plastic package. The device is fabricated in a 1 m Complementary Metal
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TDA1308
TDA1308
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TDA1308
Abstract: TDA1308T TDA1308TT TDA1308 application notes TDA1308A TDA1308AUK IEC wiring schematic symbols
Text: TDA1308 Class-AB stereo headphone driver Rev. 5 — 14 March 2011 Product data sheet 1. General description The TDA1308 is an integrated class-AB stereo headphone driver contained in an SO8 or a TSSOP8 plastic package. The device is fabricated in a 1 m Complementary Metal
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TDA1308
TDA1308
TDA1308T
TDA1308TT
TDA1308 application notes
TDA1308A
TDA1308AUK
IEC wiring schematic symbols
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handbook of shipboard electromagnetic shielding practices
Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Text: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command
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S9407-AB-HBK-010
S9407-AB-HBK-010,
S9407-AB-HBK-010
03Z44,
05H31,
08K/CHABAY)
PMS303A41,
handbook of shipboard electromagnetic shielding practices
ASTM-A-753
MIL-B-857
MIL-STD-463
s41 hall effect sensor s41
hall effect sensor s41
s41 hall effect sensor
S9300-AW-EDG-010
Bendix synchro control transformer
MIL-C-915
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display expansion
Abstract: lpc interface schematic
Text: Display Expansion Board - User’s Guide Copyright 2012 Embedded Artists AB Display Expansion Board Get Up-and-Running Quickly and Start Developing Your Application On Day 1! EA-USG-1209 Rev A Display Expansion Board - User’s Guide Page 2 Embedded Artists AB
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EA-USG-1209
27MHz
display expansion
lpc interface schematic
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sqfp 14x20
Abstract: 74ALSXX P51XA-G3 OTP-e PC 74 HCT 32 P sQFP 14X14 TDA1308 equivalent SG 2368 tqfp 14x14 tray TDA1308 application notes
Text: Philips Semiconductors Product specification Class AB stereo headphone driver TDA1308 FEATURES GENERAL DESCRIPTION • Wide temperature range The TDA1308 is an integrated class AB stereo headphone driver contained in an SO8 or a DIP8 plastic package. The device is fabricated in a 1 mm CMOS process and has
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30MHz
80C51
sqfp 14x20
74ALSXX
P51XA-G3
OTP-e
PC 74 HCT 32 P
sQFP 14X14
TDA1308 equivalent
SG 2368
tqfp 14x14 tray
TDA1308 application notes
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Untitled
Abstract: No abstract text available
Text: LM49200, LM49200TLEVAL www.ti.com LM49200 SNAS459A – MAY 2009 – REVISED APRIL 2013 Stereo Class AB Audio Subsystem with a True Ground Headphone Amplifier Check for Samples: LM49200, LM49200TLEVAL FEATURES APPLICATIONS • • • • 1 2 • • • •
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LM49200,
LM49200TLEVAL
LM49200
SNAS459A
32-Step
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Untitled
Abstract: No abstract text available
Text: LM49200, LM49200TLEVAL www.ti.com LM49200 SNAS459A – MAY 2009 – REVISED APRIL 2013 Stereo Class AB Audio Subsystem with a True Ground Headphone Amplifier Check for Samples: LM49200, LM49200TLEVAL FEATURES APPLICATIONS • • • • 1 2 • • • •
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LM49200,
LM49200TLEVAL
SNAS459A
LM49200
32-Step
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Untitled
Abstract: No abstract text available
Text: LM49200, LM49200TLEVAL www.ti.com LM49200 SNAS459A – MAY 2009 – REVISED APRIL 2013 Stereo Class AB Audio Subsystem with a True Ground Headphone Amplifier Check for Samples: LM49200, LM49200TLEVAL FEATURES APPLICATIONS • • • • 1 2 • • • •
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LM49200,
LM49200TLEVAL
LM49200
SNAS459A
32-Step
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optocoupler bi-directional
Abstract: No abstract text available
Text: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection
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LH1539AAC/
LH1525
i179055
LH1539
08-Apr-05
optocoupler bi-directional
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210 optocoupler
Abstract: LH1525 LH1539AAC LH1539AACTR LH1539AB
Text: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection
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LH1539AAC/
LH1525
E52744
18-Jul-08
210 optocoupler
LH1539AAC
LH1539AACTR
LH1539AB
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Untitled
Abstract: No abstract text available
Text: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection
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LH1539AAC/
LH1525
E52744
D-74025
26-Apr-04
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LH1525
Abstract: LH1539AAC LH1539AACTR LH1539AB smd optocoupler
Text: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection
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LH1539AAC/
LH1525
E52744
D-74025
26-Apr-04
LH1539AAC
LH1539AACTR
LH1539AB
smd optocoupler
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Untitled
Abstract: No abstract text available
Text: #1 ’09 BitSim AB 4-channel 16bit 130 MSps FMC module Main Office S:t Eriksgatan 63 SE-112 34 Stockholm Sweden www.bitsim.com info@bitsim.com Gothenburg Arvid Hedvalls backe 4 SE-411 33 Göteborg Linköping Teknikringen 1 F SE-583 30 Linköping Lund Scheelevägen 17
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16bit
SE-112
SE-411
SE-583
SE-223
SE-753
SE-352
16V130)
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nxp TRANSISTOR SMD 13
Abstract: No abstract text available
Text: BLA6G1011-200R Power LDMOS transistor Rev. 02 — 1 March 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLA6G1011-200R
BLA6G1011-200R
nxp TRANSISTOR SMD 13
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Untitled
Abstract: No abstract text available
Text: BLF6G10L-40BRN Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLF6G10L-40BRN
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RO4350
Abstract: No abstract text available
Text: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLF6G10L-40BRN
RO4350
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Untitled
Abstract: No abstract text available
Text: BLF6G05LS-200RN Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLF6G05LS-200RN
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810 souriau
Abstract: ATC100B RO4350 souriau 810
Text: BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
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BLF6G10L-40BRN
810 souriau
ATC100B
RO4350
souriau 810
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Headphone Amplifiers
Abstract: 24v Audio amplifier class AB Amplifier With Active Output Clipping "Headphone Amplifiers" 32 headphone amplifier class AB mosfet class ab rf naturalsounding mosfet power amplifier class D SIGNAL PATH designer CLASS AB MOSFET RF amplifier
Text: SIGNAL PATH designer Expert tips and techniques for PowerWise® energy-efficient design No. 118 Feature Article . 1-5 Energy-Efficient Solutions .2 PowerWise® Class G versus Class AB Headphone Amplifiers — By Richard Gomez, Audio Product Engineer
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J122 SMD TRANSISTOR
Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22L-40BN
J122 SMD TRANSISTOR
BLC6G22L-40BN/2
800B
BLF6G22L-40BN
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Untitled
Abstract: No abstract text available
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22L-40BN
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BLF6G13L-250P
Abstract: JESD625-a 250WF
Text: BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 1 — 2 November 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Test information Typical RF performance at Tcase = 25 °C; IDq = 100 mA; in a class-AB production test circuit.
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BLF6G13L-250P;
BLF6G13LS-250P
BLF6G13L-250P
6G13LS-250P
JESD625-a
250WF
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Untitled
Abstract: No abstract text available
Text: 1 DIGITAL Semiconductor 21340-AB Overview The DIGITAL Sem iconductor 21340-AB 10/100-M b/s B uffered Port Switch also called the 21340-A B is an intelligent, m ultisegm ent, four-port buffered repeater building block. The 21340-AB can be used to build a variety o f advanced Ethernet
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21340-AB
21340-AB
10/100-M
1340-A
10/100-Mb/s
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INS8251N
Abstract: USART 8251 INS8080A INS8224 8251 microprocessor block diagram 8251 usart programming ta 8251 3 pins terminal block INS8251J rd 3153
Text: National Semiconductor Novem ber 1980 n 00 io 01 INS8251 Programmable Communication Interface Features T h e IN S 8 2 5 1 is a p rog ram m ab le U n iversal S y n c h ro n o u s / • S y n c h ro n o u s O p e ratio n s • S y n c h ro n o u s M o d e C ap ab ilitie s
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INS8251
28-pin
N8080
232-201S
03-729-R333
INS8251N
USART 8251
INS8080A
INS8224
8251 microprocessor block diagram
8251 usart programming
ta 8251
3 pins terminal block
INS8251J
rd 3153
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