Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AB-10 NATIONAL Search Results

    AB-10 NATIONAL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54HC221AJ/883C Rochester Electronics Replacement for National Semiconductor part number MM54HC221AJ/883C. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics Buy
    9015DM/B Rochester Electronics LLC Replacement for National Semiconductor part number 9015DMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    LMX2305WG/B Rochester Electronics LLC Replacement for National Semiconductor part number LMX2305WG. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    DM54173J/B Rochester Electronics LLC Replacement for National Semiconductor part number DM54173J/883. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54161DM/B Rochester Electronics LLC Replacement for National Semiconductor part number 54161DMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    AB-10 NATIONAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PVH0946

    Abstract: stm32f10x users manual bluetooth antenna design
    Text: connectBlue CB-OBS421 ELECTRICAL MECHANICAL DATA SHEET Document Revision Document number: 7667755 Release: Feb 19, 2014 10:12 Document version: 14 Copyright 2014 connectBlue AB. The contents of this document can be changed by connectBlue AB without prior notice and do not constitute any


    Original     		PDF CB-OBS421 OBS421i-04 OBS421j-04 OBS421x-04 OBS421i-06 OBS421j-06 OBS421x-06 OBS421i-A? OBS421j-A? OBS421x-A? PVH0946 stm32f10x users manual bluetooth antenna design

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805

    LM7805 smd 8 pin

    Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 smd transistor marking C14

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1

    LM7805 smd 8 pin

    Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1

    LM7805 smd

    Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PDF PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 smd LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds

    LM7805 M SMD

    Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PDF PTF180101M PTF180101M 10-watt LM7805 M SMD LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 TPSE106K050R0400

    LM7805 M SMD

    Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
    Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small


    Original     		PDF PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v

    Untitled

    Abstract: No abstract text available
    Text: BLF6G21-10 Power LDMOS transistor Rev. 01 — 6 July 2009 Objective data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G21-10 BLF6G21-10

    LH1513

    Abstract: LH1513AAC LH1513AACTR LH1513AB VDE0884
    Text: LH1513AAC/ AACTR/ AB Vishay Semiconductors 2 Form A Solid State Relay SMD DIP Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 5300 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 140 mA High Surge Capability


    Original     		PDF LH1513AAC/ 2002/95/EC 2002/96/EC UL1577, E52744 VDE0884) D-74025 26-Oct-04 LH1513 LH1513AAC LH1513AACTR LH1513AB VDE0884

    107 10V smd

    Abstract: Photodiode-Array smd diode s1 AACTR LH1513 LH1513AAC LH1513AACTR LH1513AB VDE0884 780 AC
    Text: LH1513AAC/ AACTR/ AB Vishay Semiconductors 2 Form A Solid State Relay SMD DIP Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 5300 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 140 mA High Surge Capability


    Original     		PDF LH1513AAC/ 2002/95/EC 2002/96/EC UL1577, E52744 VDE0884) 08-Apr-05 107 10V smd Photodiode-Array smd diode s1 AACTR LH1513 LH1513AAC LH1513AACTR LH1513AB VDE0884 780 AC

    LH1513AB

    Abstract: LH1513 LH1513AAC LH1513AACTR VDE0884
    Text: LH1513AAC/ AACTR/ AB Vishay Semiconductors 2 Form A Solid State Relay SMD DIP Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 5300 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 140 mA High Surge Capability


    Original     		PDF LH1513AAC/ 2002/95/EC 2002/96/EC UL1577, E52744 VDE0884) 18-Jul-08 LH1513AB LH1513 LH1513AAC LH1513AACTR VDE0884

    Untitled

    Abstract: No abstract text available
    Text: VISHAY LH1513AAC/ AACTR/ AB Vishay Semiconductors 2 Form A Solid State Relay SMD DIP Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 5300 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 140 mA High Surge Capability


    Original     		PDF LH1513AAC/ E52744 VDE0884) D-74025 26-Apr-04

    Untitled

    Abstract: No abstract text available
    Text: VISHAY LH1513AAC/ AACTR/ AB Vishay Semiconductors 2 Form A Solid State Relay SMD DIP Features • • • • • • • • • • Current Limit Protection Isolation Test Voltage 5300 VRMS Typical RON 10 Ω Load Voltage 200 V Load Current 140 mA High Surge Capability


    Original     		PDF LH1513AAC/ i179033 LH1513 D-74025 26-Apr-04

    BLF6G21-10G

    Abstract: No abstract text available
    Text: BLF6G21-10G Power LDMOS transistor Rev. 01 — 11 May 2009 Objective data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G21-10G BLF6G21-10G

    RT3PE3000L

    Abstract: RT3PE600L CCGA diode t25 4 L9 AG18 AA10 AA13 aa19 896-CCGA IO115NPB3V0
    Text: Radiation-Tolerant ProASIC3 Packaging 3 – Package Pin Assignments 484-Pin CCGA A B C D E F G H J K L M N P R T U V W Y AA AB 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 Note: This is the bottom view of the package. Note For Package Manufacturing and Environmental information, visit the Resource Center at


    Original     		PDF 484-Pin RT3PE600L IO07PDB0V1 IO71NDB4V0 IO11NDB0V1 RT3PE3000L RT3PE600L CCGA diode t25 4 L9 AG18 AA10 AA13 aa19 896-CCGA IO115NPB3V0

    DP83265AVF

    Abstract: BSI 225 p832 C1995 DP83256 DP83256-AP DP83257 DP83261 DP83265 DP83265A
    Text: November 1994 DP83265A BSI-2 TM Device FDDI System Interface General Description Features The DP83265A BSI-2 device implements an interface between the National FDDI BMACTM device and a host system It provides a multi-frame MAC-level interface to one or


    Original     		PDF DP83265A DP83265 32-bit 32-bit DP83265AVF BSI 225 p832 C1995 DP83256 DP83256-AP DP83257 DP83261 DP83265

    abus

    Abstract: C1995 DP83231 DP83241 DP83251 DP83255 DP83261 DP83265
    Text: February 1991 DP83265 BSI TM Device FDDI System Interface General Description Features The DP83265 BSI device implements an interface between the National FDDI BMACTM device and a host system It provides a multi-frame MAC-level interface to one or more MAC Users


    Original     		PDF DP83265 32-bit abus C1995 DP83231 DP83241 DP83251 DP83255 DP83261

    Untitled

    Abstract: No abstract text available
    Text: 1 DIGITAL Semiconductor 21340-AB Overview The DIGITAL Sem iconductor 21340-AB 10/100-M b/s B uffered Port Switch also called the 21340-A B is an intelligent, m ultisegm ent, four-port buffered repeater building block. The 21340-AB can be used to build a variety o f advanced Ethernet


    OCR Scan     		PDF 21340-AB 21340-AB 10/100-M 1340-A 10/100-Mb/s

    Untitled

    Abstract: No abstract text available
    Text: J A E ELECTRONICS INC 4flT34b5 00D044G *=} • 51E D : ALL PLASTIC TYPE-DEL SERIES A -n ET SIDE Part description: DEL-J9S-10-FO Crimp contacts are ordered separately. -03 S o ck e t contacts T y -ra p for c ab le attached) fU M T 0.394 (10) 0 .3 i 0 0.496


    OCR Scan     		PDF 4flT34b5 00D044G DEL-J9S-10-FO DEL-J9PA-410 JIS-C-6361 JIS-C-6366 JIS-C-6367 NDSXC6116 DSPC6242 MIL-C-24308

    DM74S04N

    Abstract: 811A DM54S04J DM54S04W DM74S04M J14A M14A N14A W14B SM 6442 B
    Text: , June 1989 DM54S04/DM74S04 Hex Inverting Gates General Description This device contains six independent gates each of which performs the logic INVERT function. Connection Diagram Dual-In-Line Package V - Ab 11 a Y6 n A5 Yb 11 12 A4 10 i>°- r D i > ^ - - t >


    OCR Scan     		PDF DM54S04/DM74S04 TL/F/6442-1 DM54S04J, DM54S04W, DM74S04M DM74S04N TL/F/6442 RRD-B30M105/Printed 811A DM54S04J DM54S04W J14A M14A N14A W14B SM 6442 B

    H3T TIME UNIT

    Abstract: MAX PLUS II free
    Text: 181B National Semiconductor & DM74AS181B Arithmetic Logic Unit/Function Generator General Description Features These arithmetic logic units ALU /function generators per­ form 16 binary arithmetic operations on two 4-bit words, as shown in Tables I and II. These operations are selected by


    OCR Scan     		PDF DM74AS181B AS181B AS181B AS882 Q0fl30bl H3T TIME UNIT MAX PLUS II free

    MAX PLUS II free alu

    Abstract: DM74AS181B MAX PLUS II free
    Text: B 181 National Semi conductor DM74AS181B Arithmetic Logic Unit/Function Generator General Description Features These arithmetic logic units ALU /function generators per­ form 16 binary arithmetic operations on two 4-bit words, as shown in Tables I and II. These operations are selected by


    OCR Scan     		PDF DM74AS181B AS181B AS882 17to64 00fl30bl MAX PLUS II free alu MAX PLUS II free

    74AS181B

    Abstract: 74AS181 ASS82
    Text: N A T I O N A L S E M I C O N D - C L O G I O bl 6501122 ]>Ë t S G U S E NATIONAL DGSlbßG i) SEMICONDUCTOR 61C 5 1 6 8 0 D f-V?-// DM54AS181B/DM74AS181B National ÆjA Semiconductor DM54AS181B/DM74AS181B Arithmetic Logic Unit/Function Generators General Description


    OCR Scan     		PDF DM54AS181B/DM74AS181B DM54AS181B/DM74AS181B 74AS181B 74AS181 ASS82