ABB SEMICONDUCTORS 5SSB Search Results

ABB SEMICONDUCTORS 5SSB Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPHR7404PU		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

ABB SEMICONDUCTORS 5SSB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ABB Semiconductors 5ssb Abstract: 30X1700 abb traction motor 30X0900 thyristor ABB 5SSB30X0900 23X1200 30X0800 5SSB50X0500 5SSB30X1600 Text: Silicon Surge Voltage Suppressor 5SSB .X Series Doc. No. 5SYA 1031-01 Nov.95 Features The 5SSB silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5SSB silicon surge voltage suppressors are best suited to protect power thyristors against small	Original	50X0400 50X0500 38X0600 38X0700 30X0800 30X0900 nF/100 CH-5600 ABB Semiconductors 5ssb 30X1700 abb traction motor 30X0900 thyristor ABB 5SSB30X0900 23X1200 30X0800 5SSB50X0500 5SSB30X1600	PDF
abb motor MU 200 Abstract: abb motor MU 300 abb traction motor ABB Semiconductors 5ssb 5SSB38X0700 23X1300 5SSB30X1900 5SSB30X0800 38X06 mu 200 abb Text: 5SSB 5SSB Old part no. S 830 Silicon Surge Voltage Suppressor Properties § Diffused pnp – Si structure § hermetically sealed in metal-ceramic package § Available to protect power devices thyristors against small and medium power surges (e.g. 200 kW over 10 s)	Original	1768/138a, S/038/00 Jul-10 VD100 30X1600 20X3100 Jul-10 abb motor MU 200 abb motor MU 300 abb traction motor ABB Semiconductors 5ssb 5SSB38X0700 23X1300 5SSB30X1900 5SSB30X0800 38X06 mu 200 abb	PDF
Abb breakover diode Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800 Text: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole rance V >	OCR Scan	VBO/100 VR/100 Abb breakover diode BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800	PDF
30X0900 Abstract: 555B 55SA 50R0500 5SSB30X1600 5SSA30R1000 5SBB20T1 5sbb 5SBD Text: Silicon Surge Voltage Suppressors Diffundierte pnp-Struktur. Symmetrische Sperrkennlinie mit kontrollierter Avalanche-Charakteristik. Effektiver Schutz gegen repetitive und transiente Überspannungen. Geeignet für den Schutz von Thyristoren, Transistoren und IGBTs.	OCR Scan	001bfi3fi 5SBB20T11 VBO/100 VR/100inV 000007b 30X0900 555B 55SA 50R0500 5SSB30X1600 5SSA30R1000 5SBB20T1 5sbb 5SBD	PDF