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    ABB SEMICONDUCTORS 5SSB Search Results

    ABB SEMICONDUCTORS 5SSB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ABB SEMICONDUCTORS 5SSB Datasheets Context Search

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    ABB Semiconductors 5ssb

    Abstract: 30X1700 abb traction motor 30X0900 thyristor ABB 5SSB30X0900 23X1200 30X0800 5SSB50X0500 5SSB30X1600
    Text: Silicon Surge Voltage Suppressor 5SSB .X Series Doc. No. 5SYA 1031-01 Nov.95 Features The 5SSB silicon surge voltage suppressor consists of a diffused pnp-Si-wafer mounted with pressure contact in a hermetically sealed metal-ceramic-package. 5SSB silicon surge voltage suppressors are best suited to protect power thyristors against small


    Original     		PDF 50X0400 50X0500 38X0600 38X0700 30X0800 30X0900 nF/100 CH-5600 ABB Semiconductors 5ssb 30X1700 abb traction motor 30X0900 thyristor ABB 5SSB30X0900 23X1200 30X0800 5SSB50X0500 5SSB30X1600

    abb motor MU 200

    Abstract: abb motor MU 300 abb traction motor ABB Semiconductors 5ssb 5SSB38X0700 23X1300 5SSB30X1900 5SSB30X0800 38X06 mu 200 abb
    Text: 5SSB 5SSB Old part no. S 830 Silicon Surge Voltage Suppressor Properties § Diffused pnp – Si structure § hermetically sealed in metal-ceramic package § Available to protect power devices thyristors against small and medium power surges (e.g. 200 kW over 10 s)


    Original     		PDF 1768/138a, S/038/00 Jul-10 VD100 30X1600 20X3100 Jul-10 abb motor MU 200 abb motor MU 300 abb traction motor ABB Semiconductors 5ssb 5SSB38X0700 23X1300 5SSB30X1900 5SSB30X0800 38X06 mu 200 abb

    Abb breakover diode

    Abstract: BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800
    Text: Breakover Diodes ABB Semiconductors AG • D iffused pnpn structure fired by over­ voltages. Effective protection of thyristors against transients. T hyristor protection by em ergency firing. Housing: Single elem ent Int. structure m > T ole ­ rance V >


    OCR Scan     		PDF VBO/100 VR/100 Abb breakover diode BU 3150 cross reference 5SBD 05T1400 20T100 5SBB 20T1200 5SBB 20T1500 20T2500 5SBA 5SBD 05T1300 05t1800

    30X0900

    Abstract: 555B 55SA 50R0500 5SSB30X1600 5SSA30R1000 5SBB20T1 5sbb 5SBD
    Text: Silicon Surge Voltage Suppressors Diffundierte pnp-Struktur. Symmetrische Sperrkennlinie mit kontrollierter Avalanche-Charakteristik. Effektiver Schutz gegen repetitive und transiente Überspannungen. Geeignet für den Schutz von Thyristoren, Transistoren und IGBTs.


    OCR Scan     		PDF 001bfi3fi 5SBB20T11 VBO/100 VR/100inV 000007b 30X0900 555B 55SA 50R0500 5SSB30X1600 5SSA30R1000 5SBB20T1 5sbb 5SBD