Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 2.10 rT = 0.58 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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40L4501
CH-5600
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static
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40L4502
40L4502
CH-5600
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GTO thyristor ABB
Abstract: 40L4502
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4502
5SYA1209-04
40L4502
CH-5600
GTO thyristor ABB
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GTO thyristor
Abstract: ABB GTO ABB thyristor 5 THYRISTOR GTO gto peak reverse voltage test abb GTO thyristor ABB
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.20 0.65 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4502
40L4502
CH-5600
GTO thyristor
ABB GTO
ABB thyristor 5
THYRISTOR GTO
gto peak reverse voltage test abb
GTO thyristor ABB
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5SGA40L4501
Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4501
CH-5600
5SGA40L4501
ABB 5SGA
40L4501
ABB thyristor 5
GTO thyristor ABB
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5SGF40L4502
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 1.2 0.65 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGF 40L4502 Doc. No. 5SYA1209-04 Feb. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4502
5SYA1209-04
40L4502
CH-5600
5SGF40L4502
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ABB thyristor 5
Abstract: GTO thyristor ABB THYRISTOR GTO
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.08 0.29 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 mΩ V MARKETING INFORMATION Doc. No. 5SYA 1235-00 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses
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40L4502
40L4502
CH-5600
ABB thyristor 5
GTO thyristor ABB
THYRISTOR GTO
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40L4502
Abstract: 123500
Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.08 rT = 0.29 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 Marketing Information mΩ V Doc. No. 5SYA 1235-00 Oct. 98 Features The 5SGT 40L4502 is an 91 mm buffered layer, Transparent Emitter non-shorted anode GTO
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40L4502
40L4502
CH-5600
123500
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press pack thyristor 10000 VDRM
Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4501
5SYA1208-02
CH-5600
press pack thyristor 10000 VDRM
LS 7313 S
5SGA40L4501
LS 7313 - S
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35L4502
Abstract: 106A2 IGCT thyristor ABB high power igct abb IGCT
Text: Key Parameters VDRM = 4500 V ITGQM = 4000 A ITSM = 25 kA VT0 = 1.2 V rT = 0.37 mΩ VDClink = 2800 V Integrated Gate-Commutated Thyristor 5SHY 35L4502 PRELIMINARY Doc. No. 5SYA 1218-04 Feb. 99 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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35L4502
HFBR-2412T,
HFBR-1412T,
CH-5600
35L4502
106A2
IGCT thyristor ABB
high power igct abb
IGCT
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5sya2020
Abstract: 5SDD40H4000
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 3930 6170 46x103 0.885 0.135 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-01 Okt. 08 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
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5SYA1176-01
CH-5600
5sya2020
5SDD40H4000
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40H4000
Abstract: No abstract text available
Text: 5SDD 40H4000 5SDD 40H4000 Old part no. DV 889-4000-40 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 4 000 I FAVm = 3 847 I FSM = 46 000 V TO = 0.900
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40H4000
1768/138a,
DV/078/02d
Aug-11
Aug-11
40H4000
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5SDD 54N4000
Abstract: D150 Rectifier A150 B150 C150 D150 VF150 VF25
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V mΩ Ω 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability
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54N4000
5SYA1171-00
CH-5600
5SDD 54N4000
D150 Rectifier
A150
B150
C150
D150
VF150
VF25
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Untitled
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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5SYA1208-02
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 Rectifier Diode V A A A V mΩ 5SDD 40H4000 Doc. No. 5SYA1176-00 Sept. 07 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values Note 1
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5SYA1176-00
CH-5600
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HFBR-2521Z
Abstract: 6227-1 j-900 HFBR-1528Z
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4521 Doc. No. 5SYA1253-00 Feb. 12 • High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity
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35L4521
5SYA1253-00
CH-5600
HFBR-2521Z
6227-1
j-900
HFBR-1528Z
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V 5SDD 54N4000 mW Doc. No. 5SYA1171-01 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability
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5SYA1171-01
CH-5600
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IGCT
Abstract: igct application
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-03 May 08 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and
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5SYA1233-03
CH-5600
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IGCT thyristor
Abstract: No abstract text available
Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 April 04 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100Hz) and wide
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5SYA1233-02
100Hz)
CH-5600
IGCT thyristor
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IGCT thyristor ABB
Abstract: high power igct abb IGCT thyristor current max igct application 35L4512
Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and
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5SYA1233-02
CH-5600
IGCT thyristor ABB
high power igct abb
IGCT thyristor current max
igct application
35L4512
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35L4520
Abstract: IGCT high voltage
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-00 Feb. 12 • High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity
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5SYA1248-00
CH-5600
35L4520
IGCT high voltage
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35L4522
Abstract: high power igct abb
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4522 Doc. No. 5SYA1249-00 Feb.12 • High snubberless turn-off rating Optimizedfor low frequency High electromagnetic immunity
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5SYA1249-00
CH-5600
35L4522
high power igct abb
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high power igct abb
Abstract: IGCT thyristor current max amp mta 156
Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 3800 26x103 1.88 0.56 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-03 June 10 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback
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5SYA1245-03
CH-5600
high power igct abb
IGCT thyristor current max
amp mta 156
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IGCT thyristor ABB
Abstract: IGCT thyristor current max IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 igct abb
Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 6500 4200 26x103 2.0 0.54 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6530 PRELIMINARY Doc. No. 5SYA1246-00 Aug. 07 • High snubberless turn-off rating • Wide temperature range
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5SYA1246-00
CH-5600
IGCT thyristor ABB
IGCT thyristor current max
IGCT
A125
B125
C125
HFBR-1528
HFBR-2528
MTA-156
igct abb
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