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    ACRIAN RF POWER Search Results

    ACRIAN RF POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    ACRIAN RF POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


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    PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    trw rf

    Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W


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    PDF UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50
    Text: DE| ACRIAN INC 2301 DESCRIPTION 1.5 WATTS - 20 VOLTS 2300 MH2 The 2301 is a common base transistor capable of providing 1.5 watts of C W RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications applications. It


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    PDF -65to acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w acrian inc acrian H100-50

    VMOB30

    Abstract: B15-12 B3-12 B15-12-2 B15-12-3 acrian inc acrian
    Text: 17 DE I □IfiST'iö 000120^ 0 ACRIAN INC B15-12 GENERAL DESCRIPTION 15 WATTS -12.5 VOLTS 150-175 MHz The B15-12 is designed for VHF land mobile applications delivering 15 watts of RF power output from a 12.5 volt supply and operates over the 150-175 MHz frequency band.


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    PDF B15-12 B15-12 VMOB30 B3-12 B15-12-2 B15-12-3 acrian inc acrian

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
    Text: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.


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    PDF S250-50 S250-50-3 Icq-100 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: Acrian s 46120 BVces Scans-00115701
    Text: 0182998 ACRIAN INC dFJ T~~ 3Jt~s/ 0DP1531 1 46120 GENERAL DESCRIPTION 20 WATTS - 28 VOLTS 1000 MHz The 46120 is a stable common emitter transistor capable of providing 20 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed


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    PDF 0Dpi53i 100mA acrian RF POWER TRANSISTOR Acrian s 46120 BVces Scans-00115701

    acrian RF POWER TRANSISTOR

    Abstract: 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian
    Text: 0182998 ACRIAN INC GENERAL T? DE jOlflSTTfl □□□lOflfl 0 0912*45 DESCRIPTION 45 WATTS - 50 VOLTS 960-1215 MHz The 0912-45 is an internally matched, common base transistor providing 45 watts of pulsed RF output power across the 960-1215 MHz band. This transistor is


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    PDF -65to T-33-15 50VDC 10OpF acrian RF POWER TRANSISTOR 960-1215 MHz transistor 20W ejc2 x band pulsed amplifier radar ELECTROLYTIC CAPACITOR 5u acrian RF resistor acrian inc acrian

    transistor 30054

    Abstract: transistor 3005 2 acrian RF POWER TRANSISTOR transistor 3005 i 3005-2 transistor 3005-2 transistor b 30054 acrian ic ACRIAN acrian inc
    Text: 0182998 ACRIAN GENERAL INC 97D 0 1 4 7 9 3005 DESCRIPTION 5 WATT - 28 VOLTS 3000 MHz The 3005 is a common base transistor capable of providing 5 watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed for telemetry and telecommunications


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    transistor c3-12

    Abstract: acrian RF POWER TRANSISTOR C3-12 C3-12-2 C312
    Text: 0182998 ACRIAN INC ~T? j>F| 0 1 0 2 ^ 0 0DG13ai a ^ 3 ^ ö7 C3-12 GENERAL DESCRIPTION The C3-12 is a common emitter RF power transistor designed to provide 4 watts of power from a 12.5 volt supply across the 450-512 MHz band. 4 WATT - 12.5 VOLTS 450-512 MHz


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    PDF C3-12 lc-50mA 100mA Vcc-12 transistor c3-12 acrian RF POWER TRANSISTOR C3-12-2 C312

    acrian RF POWER TRANSISTOR

    Abstract: JTDA50 JTDA50-2 Scans-00115670
    Text: 0182998 ACRIAN INC GENERAL T? DE j G i a a n f l □□□1012 2 T D ' T - J j - LS JTDA50 DESCRIPTION The JTDA50 is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for


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    PDF JTDA50 UTDA50 JTDA50-2 acrian RF POWER TRANSISTOR JTDA50-2 Scans-00115670

    acrian RF POWER TRANSISTOR

    Abstract: 1000 class ab power amplifier LBAA s 46120 Scans-00115699
    Text: 0182998 ACRIAN "t? INC ' 3S- * 7 de I G i a s ^ a DDGisa? □ 46104 GENERAL DESCRIPTION 4 WATTS - 28 VOLTS 1000 MHz The 46104 is a stable common emitter transistor capable of providing 4 watts of CW RF output power across the 500-1000 MHz frequency band. This transistor is specifically designed


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    B45-12

    Abstract: B30-12 B45-12-3 B15-12 B45-12-2 Scans-00115716
    Text: 0182998 ACRIAN INC T? DE KS1 *B B 'M W5 mm SS>^»K CPmZt IP 1! 2 55 MRÜ mm K mm ¡15 5 SI S H Pi Sr. nal MMR R WWtawn B45-12 GENERAL DESCRIPTION 45 WATTS - 12.5 VOLTS 150-175 MHz The B45-12 is designed for VHF land mobile applications delivering 45 watts of RF power


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    PDF B45-12 B45-12 175MH 12ENCY B30-12 B45-12-3 B15-12 B45-12-2 Scans-00115716

    B12-12

    Abstract: B1212 B312 RF B3-12 B3-12-3 B3123 acrian inc acrian
    Text: 0182998 ACRIAN rJm fZék n m m GSBa INC T? mm Är. mm c F la ifla Wjm mam .wsi ward o o o is fls 5 | ~ - 3 3 ~ ô 7 BGÈAN B3-12 GENERAL DESCRIPTION The B3-12 is specifically designed for VHF land mobile operation providing 3 watts of RF power output from a


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    PDF B3-12 -65to I75MH B3-12 D001EÃ B3-12-3 B3-12-4 B12-12 B1212 B312 RF B3-12-3 B3123 acrian inc acrian

    acrian RF POWER TRANSISTOR

    Abstract: 58W45 2023-6T microwave amplifier 2.4 ghz 10 watts 2023-15 acrian inc
    Text: T? ACRIAN INC GENERAL DE I D lflE T T fl 000142D 4 | 2023-1.5 D E S C R IP TIO N 1.5 WATTS - 22 VOLTS 2.0-2.3 GHZ The 2023-1.5 is an internally matched common base transistor providing 3 watts of RF CW output power across the 2000-2300 MHz band. This hermetically sealed


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    PDF 2023-6T lc-10mA 100mA, acrian RF POWER TRANSISTOR 58W45 2023-6T microwave amplifier 2.4 ghz 10 watts 2023-15 acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: I3003 25CC TPR175 TPR400 TPR400-2 transistor DF 50 we400 Scans-00115664
    Text: 0182998 ACRIAN n ^ a ISJm’I r ; ^ y GENERAL T7 INC j ^ « q BMC rj^ |j |!|gM tw g ; T P R 4 0 0 400 WATTS • 50 VOLTS 1030/1090 MHz DESCRIPTION The TPR400 is a silicon NPN common base RF power transistor designed specifically for pulsed operation as a transponder/interrogator amplifier in the 1030 to


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    PDF TPR400 Pw-10 TPR400 Vcc-50 DD01D71 T-33-15 TPR400-3 06-6pf acrian RF POWER TRANSISTOR I3003 25CC TPR175 TPR400-2 transistor DF 50 we400 Scans-00115664

    B1123

    Abstract: BM15-12 B1-12 B1-12-2 B1-12-3 B1122 acrian inc B112 BM1512
    Text: ACRIAN INC ^ | g g I? g | g | | g m g ^ p p DE • DlñSTTñ 0001202 7 | | m ^ w à B1-12 GENERAL DESCRIPTION 1.0 WATTS - 12.5 VOLTS 136-175 MHz The B1-12 ¡s designed to provide 1.0 watt of RF power from a 12.5 VDC supply across the 1 3 6 -1 7 5 MHz band.


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    PDF 01flScHfl B1-12 -65to B1-12 DD01SÃ B1-12-3 B1123 BM15-12 B1-12-2 B1-12-3 B1122 acrian inc B112 BM1512

    acrian RF POWER TRANSISTOR

    Abstract: z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662
    Text: 0182998 ACRIAN INC T? DE lOlñSTTfl DOOlOflS 5 | ~ D m w m G EN ER A L 0912-25 D E SC R IP TIO N 25 WATTS - 50 VOLTS 960-1215 MHz The 0912-25 is an internally matched, common base transistor providing 25 watts of pulsed RF output power across the 960-1215 MHz bandwidth. This hermetically


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    PDF -65to 50VDC acrian RF POWER TRANSISTOR z3 transistor TRIMMER capacitor 5-60 pF Scans-00115662

    acrian RF POWER TRANSISTOR

    Abstract: transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power
    Text: O 1 8 2 9 9 8 . ACFjtlAN INC J97D ACRIAN INC ~T7 de 01406 r in ia e ooomoh □ ilKORIAN GENERAL 2005 D E S C R IP T IO N The 2005 is a common base transistor capable of providing 5 watts of C W RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed


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    PDF 125Woâ acrian RF POWER TRANSISTOR transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w DME 40 acrian acrian inc
    Text: 0 182998 G EN ER A L ACRIAN INC 97D 01054 D V - 3 3 - /^ DME 375 D E S C R IPTIO N 375 WATTS - 50 VOLTS 1090 MHz The DME 375 is an internally matched, common base transistor capable of providing 375 watts of pulse RF output power at 10 microsecond pulse widths and 1 percent duty cycles across the


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    PDF 10jisec DME375-3 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w DME 40 acrian acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
    Text: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.


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    PDF 01fl2! C1-28 500MHz. C1-28Z. C1-28/C1-28Z -65to GDD117D C1-28/Z-4 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc

    acrian RF POWER TRANSISTOR

    Abstract: 46100-2 DDD135S dfjg acrian inc acrian acrian B
    Text: "i? ACRIAN INC dF J DIAS']Tfl 0 0 0 1 5 5 4 4 r mmamm a m « • ■ !— j i m H n m m h v j l n iH shM H ■ m — — wo - ■ H g fM I 1 AN 46100/46101 GENERAL DESCRIPTION The 46100 is a common emitter transistor capable of providing 1 Watt of CW RF output power at 960 MHz. This transistor is


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    acrian motorola

    Abstract: ACRIAN MPA201 RF01 acrian inc
    Text: & g K B B H B B S 0182998 ACRIAN INC 17 D ESO IA S DD01D43 T □ T-33-11 iV i B k mlE If/lilife h \ G ENER AL MPA 201 D E S C R IP TIO N 0.5 WATTS 12.5 VOLTS 500 MHz The MPA-201 is an amplifier device designed for broadband performance to 500 MHz in a format suitable for stripline


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    PDF 01fl5â DD01D43 T-33-11 MPA-201 40dBm 1MV309 acrian motorola ACRIAN MPA201 RF01 acrian inc

    ACRIAN

    Abstract: C1-12 C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power
    Text: 0182998 ACRIAN 97D INC [ACRIAN INC T7 01318 DE D 7 "-7 3 -0 5 ' D i ñ a b a □DD131Û 5 |~¡ • IS iS IK E i w iJ S R £ S * ■ » mm M l ¡¿S I H P S P . H a l M U W m m m M m ms& I GENERAL C1-12 D E S C R IP TIO N 1 WATT - 12.5 VOLT 450-512 MHz The C1-12 is specifically designed for UHF


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    PDF C1-12 DQD132G" C1-12-3 470pf 005jif L4-1T3/16" ACRIAN C1-12-2 C1-12-3 acrian 1 C1123 acrian inc C112-2 acrian rf power

    acrian RF POWER TRANSISTOR

    Abstract: PU 391 acrian inc
    Text: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold


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    PDF U14Q9 400mA, D0D1411 10nfd@ acrian RF POWER TRANSISTOR PU 391 acrian inc