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    ACRIAN RF POWER TRANSISTOR T9 Search Results

    ACRIAN RF POWER TRANSISTOR T9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    acrian RF POWER TRANSISTOR

    Abstract: Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc
    Text: 0 1 8 2 9 9 8 ACRI'AN. INC h, Hü Æ& GENERAL T? SPI ÜP D E ;| 0 1 0 2 ^ 0 ^!jjj|jjjgjgg 0DD1403 4 J ^0 |j|ijj|jUp*^ 2003 D E S C R IP T IO N The 2003 is a common base transistor capable of providing 3 Watts of C W RF output power in the 1000-2000 MHz. This hermetically sealed transistor is specifically designed for


    OCR Scan     		0DD1403 Vcb-28V Ic-100mA Tf-25Â acrian RF POWER TRANSISTOR Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc PDF