Design Considerations for the SST FlashFlex51 Family Microcontroller
Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
Text: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when
|
Original
|
PDF
|
FlashFlex51
SST89F54/58
Design Considerations for the SST FlashFlex51 Family Microcontroller
Actron
endrich
Oasis
actron international
6812 microcontroller
NORTH AMERICA SALES AND DISTRIBUTION
Northern Design Electronics
Thorson Pacific
522-1150
|
32107
Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)
|
Original
|
PDF
|
SST27SF256
SST27SF256
32107
oasis
TTL 7452
A115
32-PIN
A103
A114
Tekelec TA
27721
|
oasis
Abstract: 32-PIN A103 A114 A115 SST27SF020 90-3C-PH 2t926
Text: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)
|
Original
|
PDF
|
SST27SF020
SST27SF020
oasis
32-PIN
A103
A114
A115
90-3C-PH
2t926
|
SST39VF200-70-4C-EK
Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
Text: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
|
Original
|
PDF
|
16-Bit)
SST39VF200
SST39VF200-70-4C-EK
oasis
SST39VF200
XX98
ST39VF200-90-4C-U1
SST39VF200-90-4C-EK
SST39VF200-90-4I-EK
|
TA 7644 BF
Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:
|
Original
|
PDF
|
SST31LH041
D16116
TA 7644 BF
cmos power TCP 8108
NEXUS FLASH ERASE
oasis
TCP 8108
32-PIN
F01A
SST31LH041
830049
|
cmos power TCP 8108
Abstract: oasis TCP 8108 SST39VF400 jedec mo-142 dd
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400 Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
|
Original
|
PDF
|
16-Bit)
SST39VF400
cmos power TCP 8108
oasis
TCP 8108
SST39VF400
jedec mo-142 dd
|
TA 7644 BF
Abstract: oasis 32-PIN
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512A – 3.0-3.6V for SST29LE512A – 2.7-3.6V for SST29VE512A • Superior Reliability
|
Original
|
PDF
|
SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
TA 7644 BF
oasis
32-PIN
|
oasis
Abstract: No abstract text available
Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 • Single 3.0-3.6V Read and Write Operations • Superior Reliability
|
Original
|
PDF
|
SST39LH512
SST39LH010
SST39LH020
SST39LH040
SST39LH010
oasis
|
29VE010A
Abstract: SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29EE010A SST29LE010A SST29VE010A
Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010A – 3.0-3.6V for the SST29LE010A – 2.7-3.6V for the SST29VE010A • Superior Reliability
|
Original
|
PDF
|
SST29EE010A
SST29LE010A
SST29VE010A
SST29EE010A
SST29LE010A
SST29EE010A/29LE010A/29VE010A
29VE010A
SW2-303
metatech 300
microtek ups circuit diagram
oasis
TA 7644 BF
SST29VE010A
|
27721
Abstract: Actron diagram ta 306 oasis 29ee020
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020A – 3.0-3.6V for the SST29LE020A – 2.7-3.6V for the SST29VE020A • Superior Reliability
|
Original
|
PDF
|
SST29EE020A
SST29LE020A
SST29VE020A
SST29EE020A
SST29LE020A
SST29EE020A/29LE020A/29VE020A
27721
Actron
diagram ta 306
oasis
29ee020
|
oasis
Abstract: 32-PIN F01A SST31LH041 Actron
Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:
|
Original
|
PDF
|
SST31LH041
D16116
oasis
32-PIN
F01A
SST31LH041
Actron
|
Bf 353
Abstract: NEXUS FLASH ERASE oasis 32-PIN F01A SST31LH021
Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:
|
Original
|
PDF
|
SST31LH021
D16116
Bf 353
NEXUS FLASH ERASE
oasis
32-PIN
F01A
SST31LH021
|
NEXUS FLASH ERASE
Abstract: endrich oasis LH1605 A190 Carlo Gavazzi A1668
Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical)
|
Original
|
PDF
|
16-Bit)
SST39LH160Q
SST39LH160
SST39LH160Q
NEXUS FLASH ERASE
endrich
oasis
LH1605
A190 Carlo Gavazzi
A1668
|
AP 309
Abstract: oasis 28VF040 SST28LF040 SST28SF040 SST28VF040 0418 bd china SST28SF040-120-3C- EH
Text: 4 Megabit 512K x 8 SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST28SF040 – 3.0-3.6V for the SST28LF040 – 2.7-3.6V for the SST28VF040 • Superior Reliability
|
Original
|
PDF
|
SST28SF040
SST28LF040
SST28VF040
SST28SF040
SST28LF040
AP 309
oasis
28VF040
SST28VF040
0418 bd china
SST28SF040-120-3C- EH
|
|
|
NEXUS FLASH ERASE
Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program:
|
Original
|
PDF
|
SST31LH021
ye498404
NEXUS FLASH ERASE
353 flash
oasis
32-PIN
F01A
SST31LH021
31LH021
|
tekelec TA 355
Abstract: NEXUS FLASH ERASE oasis SST31LH103
Text: 1 Megabit Flash + 256 Kilobit SRAM ComboMemory SST31LH103 Advance Information FEATURES: • Organized as 64K x16 Flash + 16K x16 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations 2.7-3.6V without concurrent operation
|
Original
|
PDF
|
SST31LH103
Cyc316116
tekelec TA 355
NEXUS FLASH ERASE
oasis
SST31LH103
|
chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
SST37VF020
32-Pin
SST37VF020
chn 348
CHN 314
chn 317
CHN 852
chn 440
|
CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
SST37VF040
32-Pin
SST37VF040
CHN 345 X
|
CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
|
OCR Scan
|
PDF
|
SST39SF512
CHN 512
CHN 314
1/CHN 852
|
TEKELEC te 306
Abstract: 30601
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A
|
OCR Scan
|
PDF
|
SST29EE020A
SST29LE020A
SST29VE020A
Reliability526-1102
TEKELEC te 306
30601
|
27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
|
OCR Scan
|
PDF
|
SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
|
Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)
|
OCR Scan
|
PDF
|
SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
|
actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
|
CHN 602
Abstract: CHN 847
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020
|
OCR Scan
|
PDF
|
SST29EE020
SST29LE020
SST29VE020
CHN 602
CHN 847
|