Design Considerations for the SST FlashFlex51 Family Microcontroller
Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
Text: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when
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FlashFlex51
SST89F54/58
Design Considerations for the SST FlashFlex51 Family Microcontroller
Actron
endrich
Oasis
actron international
6812 microcontroller
NORTH AMERICA SALES AND DISTRIBUTION
Northern Design Electronics
Thorson Pacific
522-1150
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PDF
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transistor Bc 949
Abstract: Oasis Nexus S SA 613 Nexus S camera
Text: Features and Performances of Reprogrammable Nonvolatile Byte-wide Floating Gate Memories Technical Paper Revised March 1999 1.0 INTRODUCTION Over the past 20 to 25 years, various floating gate devices have been increasingly used for reprogrammable nonvolatile memory NVM applications.
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32107
Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)
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SST27SF256
SST27SF256
32107
oasis
TTL 7452
A115
32-PIN
A103
A114
Tekelec TA
27721
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PDF
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oasis
Abstract: 32-PIN A103 A114 A115 SST27SF020 90-3C-PH 2t926
Text: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)
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SST27SF020
SST27SF020
oasis
32-PIN
A103
A114
A115
90-3C-PH
2t926
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SST39VF200-70-4C-EK
Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
Text: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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16-Bit)
SST39VF200
SST39VF200-70-4C-EK
oasis
SST39VF200
XX98
ST39VF200-90-4C-U1
SST39VF200-90-4C-EK
SST39VF200-90-4I-EK
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TA 7644 BF
Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:
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SST31LH041
D16116
TA 7644 BF
cmos power TCP 8108
NEXUS FLASH ERASE
oasis
TCP 8108
32-PIN
F01A
SST31LH041
830049
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PDF
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cmos power TCP 8108
Abstract: oasis TCP 8108 SST39VF400 jedec mo-142 dd
Text: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400 Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention
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16-Bit)
SST39VF400
cmos power TCP 8108
oasis
TCP 8108
SST39VF400
jedec mo-142 dd
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TA 7644 BF
Abstract: oasis 32-PIN
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512A – 3.0-3.6V for SST29LE512A – 2.7-3.6V for SST29VE512A • Superior Reliability
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SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
TA 7644 BF
oasis
32-PIN
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PDF
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oasis
Abstract: No abstract text available
Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 • Single 3.0-3.6V Read and Write Operations • Superior Reliability
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SST39LH512
SST39LH010
SST39LH020
SST39LH040
SST39LH010
oasis
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29VE010A
Abstract: SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29EE010A SST29LE010A SST29VE010A
Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010A – 3.0-3.6V for the SST29LE010A – 2.7-3.6V for the SST29VE010A • Superior Reliability
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SST29EE010A
SST29LE010A
SST29VE010A
SST29EE010A
SST29LE010A
SST29EE010A/29LE010A/29VE010A
29VE010A
SW2-303
metatech 300
microtek ups circuit diagram
oasis
TA 7644 BF
SST29VE010A
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PDF
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27721
Abstract: Actron diagram ta 306 oasis 29ee020
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020A – 3.0-3.6V for the SST29LE020A – 2.7-3.6V for the SST29VE020A • Superior Reliability
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SST29EE020A
SST29LE020A
SST29VE020A
SST29EE020A
SST29LE020A
SST29EE020A/29LE020A/29VE020A
27721
Actron
diagram ta 306
oasis
29ee020
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oasis
Abstract: 32-PIN F01A SST31LH041 Actron
Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:
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SST31LH041
D16116
oasis
32-PIN
F01A
SST31LH041
Actron
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Bf 353
Abstract: NEXUS FLASH ERASE oasis 32-PIN F01A SST31LH021
Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:
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SST31LH021
D16116
Bf 353
NEXUS FLASH ERASE
oasis
32-PIN
F01A
SST31LH021
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NEXUS FLASH ERASE
Abstract: endrich oasis LH1605 A190 Carlo Gavazzi A1668
Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: - Sector Erase Time: 18 ms (typical)
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16-Bit)
SST39LH160Q
SST39LH160
SST39LH160Q
NEXUS FLASH ERASE
endrich
oasis
LH1605
A190 Carlo Gavazzi
A1668
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oasis
Abstract: 29VE020 SST29EE020 SST29LE020 SST29VE020 ms-1307
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020 – 3.0-3.6V for the SST29LE020 – 2.7-3.6V for the SST29VE020 • Superior Reliability
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SST29EE020
SST29LE020
SST29VE020
SST29EE020
SST29LE020
SST29EE020/29LE020/29VE020
oasis
29VE020
SST29VE020
ms-1307
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PDF
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NEXUS FLASH ERASE
Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program:
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SST31LH021
ye498404
NEXUS FLASH ERASE
353 flash
oasis
32-PIN
F01A
SST31LH021
31LH021
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tekelec TA 355
Abstract: NEXUS FLASH ERASE oasis SST31LH103
Text: 1 Megabit Flash + 256 Kilobit SRAM ComboMemory SST31LH103 Advance Information FEATURES: • Organized as 64K x16 Flash + 16K x16 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations 2.7-3.6V without concurrent operation
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SST31LH103
Cyc316116
tekelec TA 355
NEXUS FLASH ERASE
oasis
SST31LH103
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chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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OCR Scan
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SST37VF020
32-Pin
SST37VF020
chn 348
CHN 314
chn 317
CHN 852
chn 440
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PDF
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CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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OCR Scan
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SST37VF040
32-Pin
SST37VF040
CHN 345 X
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PDF
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CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF512
CHN 512
CHN 314
1/CHN 852
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PDF
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TEKELEC te 306
Abstract: 30601
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A
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OCR Scan
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SST29EE020A
SST29LE020A
SST29VE020A
Reliability526-1102
TEKELEC te 306
30601
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PDF
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27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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OCR Scan
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SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
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PDF
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)
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OCR Scan
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SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
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PDF
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actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
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OCR Scan
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16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
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PDF
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