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    AD 142 TRANSISTOR Search Results

    AD 142 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AD 142 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lad1 relay

    Abstract: PICMG 3.0 Revision 2.0 plx 9054 plx 9030 fet data book free download 9656BA vhdl code for pci 9056 pci slot pinout 1542H plx 9052
    Text: PCI 9656BA Data Book PCI 9656BA Data Book Version 1.0 March 2003 Website: Technical Support: Phone: FAX: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may


    Original     		PDF 9656BA Index-13 lad1 relay PICMG 3.0 Revision 2.0 plx 9054 plx 9030 fet data book free download vhdl code for pci 9056 pci slot pinout 1542H plx 9052

    PCI 9054 Detailed Technical Specifications

    Abstract: 1LD5 3LA-28 pci9656-ba pci plx 9656 plx 9656 PICMG 3 advancedtca specification PCI 9056 Detailed Technical Specifications PCI 9656-BA66BI
    Text: PCI 9656BA Data Book PCI 9656BA Data Book Version 1.1 October 2003 Website: Technical Support: Phone: FAX: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may


    Original     		PDF 9656BA Index-13 PCI 9054 Detailed Technical Specifications 1LD5 3LA-28 pci9656-ba pci plx 9656 plx 9656 PICMG 3 advancedtca specification PCI 9056 Detailed Technical Specifications PCI 9656-BA66BI

    PCI9056

    Abstract: pci9056-ba 1LD5 vhdl code for pci 9056 9056BA
    Text: PCI 9056BA Data Book PCI 9056BA Data Book Version 1.1 October 2003 Website: Technical Support: Phone: Fax: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may


    Original     		PDF 9056BA Index-13 PCI9056 pci9056-ba 1LD5 vhdl code for pci 9056

    vhdl code for pci 9056

    Abstract: 1LD5 PCI9056 PCI 9056 Detailed Technical Specifications
    Text: PCI 9056BA Data Book PCI 9056BA Data Book Version 1.1 October 2003 Website: Technical Support: Phone: Fax: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may


    Original     		PDF 9056BA Index-13 vhdl code for pci 9056 1LD5 PCI9056 PCI 9056 Detailed Technical Specifications

    PCI9056

    Abstract: 1LD5 PCI9030 3LD27 pci plx 9080 vhdl code for pci 9056
    Text: PCI 9056BA Data Book PCI 9056BA Data Book Version 1.0 April 2003 Website: Technical Support: Phone: Fax: http://www.plxtech.com http://www.plxtech.com/support/ 408 774-9060 800 759-3735 408 774-2169 2003 PLX Technology, Inc. All rights reserved. PLX Technology, Inc., retains the right to make changes to this product at any time, without notice. Products may


    Original     		PDF 9056BA 9056AD Index-13 PCI9056 1LD5 PCI9030 3LD27 pci plx 9080 vhdl code for pci 9056

    TIP142

    Abstract: TIP142 morocco TIP147 morocco TIP140 TIP141 TIP147 TIP147 TO-218 TIP145 TIP146
    Text: TIP140/141/142 TIP145/146/147  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL


    Original     		PDF TIP140/141/142 TIP145/146/147 TIP141, TIP142, TIP145 TIP147 O-218 TIP140, TIP141 TIP142 TIP142 morocco TIP147 morocco TIP140 TIP147 TO-218 TIP146

    MGW21N60ED

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW21N60ED/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced


    Original     		PDF MGW21N60ED/D MGW21N60ED MGW21N60ED

    MGW21N60ED

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MGW21N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced


    Original     		PDF MGW21N60ED/D MGW21N60ED MGW21N60ED

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor

    IGBT 50 amp 1000 volt

    Abstract: MGP20N60U
    Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N60U Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    Original     		PDF MGP20N60U/D MGP20N60U IGBTMGP20N60U/D IGBT 50 amp 1000 volt MGP20N60U

    AD143

    Abstract: ad148 ASZ1015 Germanium Power Devices
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20


    OCR Scan     		PDF ADY11 ADY27 NS257 AD143 ad148 ASZ1015 Germanium Power Devices

    AD149

    Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3


    OCR Scan     		PDF AD130 AD130â AD131 AD131â AD132 AD132â AD133 AD133â NS257 T0-18 AD149 ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax


    OCR Scan     		PDF O-220 C67078-S1318-A2

    Untitled

    Abstract: No abstract text available
    Text: *SYNERGY UNIVERSAL SYSTEM ELEMENT USE SY1BPOO SEMICONDUCTOR DESCRIPTION FEATURES • Highest density logic via unique 6-transistor cell: + greatest functionality per unit area + shortest propagation delays ■ 888 core cells yield up to 1,665 routeable


    OCR Scan     		PDF SY1BP00

    Untitled

    Abstract: No abstract text available
    Text: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)


    OCR Scan     		PDF 83mra) 203mm) JAN2N3902, JAN2N5157, SDT401, SDT430, 2N5466, 2N5468

    JAN2N5157

    Abstract: 2N54
    Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC lF|ä3bflbDS 95D 02851 OOOHfiSl b D |~ T - 3 3 ~ n -JtoUtran ra O M C T ÄTTÄIL ^ Devices, Inc. V E R Y HIGH VOLTAGE, FAST SW ITCHING NPN TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 42 CHIP N U M BER ¿1


    OCR Scan     		PDF

    sot-23 MARKING CODE ZA

    Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
    Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same


    OCR Scan     		PDF OT-23, OT-89 OT-143 BZV49 OT-23 2SC2059K sot-23 MARKING CODE ZA b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23

    LF 13471

    Abstract: UFN140
    Text: UNITRODE CORP 9347963 U N I T R O D E CORP 92D 10612 07^ $f-/ 5 POWER MOSFET TRANSISTORS ¡j^jjo 100 Volt, 0.085 Ohm N-Channel UFN142 UFN143 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		PDF UFN142 UFN143 UFN140 UFN141 LF 13471

    BFX85

    Abstract: 8FX85 BFX84 BFX86 F016 ferranti
    Text: »* <JS t ^NPN*' BFX84 BFX85 BFX86 ' Silicon planar medium power transistors 4 ZeTeX T h e B FX84 series o f tra n s is to rs is d esig n ed f o r sm all a n d m e d iu m sig nal, lo w and m e d iu m p o w e r a m p lific a tio n s a n d fo r g e n e ra l p u rp o se


    OCR Scan     		PDF BFX84 BFX85 BFX86 8FX85 BFX86 150mA 8-Munich-22, F016 ferranti

    HXTR-3685

    Abstract: HXTR-3686 HXTR3685 HXTR 3685
    Text: Whpì HEWLETT ll'/ U PACKARD Low Cost General Purpose Transistors Technical Data HXTR-3685 HXTR-3686 F eatures HXTR-3685 HXTR-3686 HXTR-3685 « Low Noise Figure: 1.8 dB Typical at 1 GHz • High Gain: 16.4 typ ical at 1 GHz at Noise Figure Bias • Low Cost Plastic Package


    OCR Scan     		PDF HXTR-3685 HXTR-3686 HXTR-3685 HPAC-85 HPAC-86 HXTR-3686 HXTR3685 HXTR 3685

    2SC2340

    Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
    Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		PDF L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


    OCR Scan     		PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor

    bs170

    Abstract: 5K02 MARKING BS
    Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V 5 VPT05158 Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 BS 170 Ordering Code Q67000-S061 Q67000-S076 Pin 3 G ^DS(on) Package


    OCR Scan     		PDF VPT05158 Q67000-S061 Q67000-S076 E6288 11---------------------------------O bs170 5K02 MARKING BS

    MMBR951L

    Abstract: BR951L MRF951 mrf9511l
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF951 M M BR951L M RF9511L The RF Line NPN Silicon Low Noise, High-Frequency Transistors Iq = 100 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e sig ned for u se in high gain, lo w n o ise sm all-signal am p lifiers. This series features


    OCR Scan     		PDF MRF951 BR951L RF9511L MRF951 MMBR951L mrf9511l