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    SEI Stackpole Electronics Inc RNF18FAD255R

    RES 255 OHM 1% 1/8W AXIAL
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    DigiKey RNF18FAD255R Ammo Pack 5,000
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    SEI Stackpole Electronics Inc RNF14FAD255K

    RES 255K OHM 1% 1/4W AXIAL
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    DigiKey RNF14FAD255K Ammo Pack 5,000
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    Avnet Americas RNF14FAD255K Ammo Pack 18 Weeks 5,000
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    Bristol Electronics RNF14FAD255K 5,000 89
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    NAC RNF14FAD255K 5,000
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    SEI Stackpole Electronics Inc RNF12DAD255R

    RES 255 OHM 0.5% 1/2W AXIAL
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    DigiKey RNF12DAD255R Ammo Pack 2,000
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    iEi Integration Corporation ECN-360A-D2550/2G-R11

    Embedded Box Computers Embedded system with NANO-CV-D25502,Intel Atom D2550 dual core 1.86 GHz, with 2 x VGA, 3 x RS-232, 1 x RS-422/485, 2GB DDR3 SO-DIMM pre-installed, dual Realtek LAN, 9~28V DC , RoHS
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    Mouser Electronics ECN-360A-D2550/2G-R11
    • 1 $505.27
    • 10 $498.71
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    Fluke Corporation APPAD-25-50

    LAN/Telecom/Cable Testing APPAD-TC-25 TO APPAD-TC-50 UPGRADE
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    Mouser Electronics APPAD-25-50
    • 1 $6153.34
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    Find more AD255 price and stock on Findchips.com

    AD255 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1 PDF

    ATC200B103KT50X

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 MRF8S21100HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		MRFE6VP6300H MRFE6VP6300HR3 MRFE6VP6300HSR3 MRFE6VP6300HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9100HR3 MRF8S9100HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all


    Original     		MRF8S9100H MRF8S9100HR3 MRF8S9100HSR3 MRF8S9100HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,


    Original     		MRFE6VP100H MRFE6VP100HR5 MRFE6VP100HSR5 MRFE6VP100HR5 PDF

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 PDF

    diode T25-4

    Abstract: IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.2 November 9, 2001 Preliminary Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)


    Original     		DS022-1 32/64-bit, 66-MHz FG1156 XCV3200E DS022-1, DS022-2, DS022-4 DS022-3, diode T25-4 IC AN214 N345 pioneer amplifier an214 XCV1600E ac3 amplifier circuit diagram AN214 amplifier horizontal driver transistor D155 K235 XCV300E-6PQ240C PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25L MRFE6VS25LR5 PDF

    MRF8S21100HS

    Abstract: MRF8S21100H
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21100H Rev. 1, 3/2011 RF Power Field Effect Transistors MRF8S21100HR3 MRF8S21100HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21100H MRF8S21100HR3 MRF8S21100HSR3 2110-2ers, MRF8S21100HS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1008H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1008HR5 MMRF1008HSR5 N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for applications operating at frequencies


    Original     		MMRF1008H MMRF1008HR5 MMRF1008HSR5 MMRF1008HR5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1009H Rev. 0, 12/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1009HR5 MMRF1009HSR5 RF power transistors designed for applications operating at frequencies


    Original     		MMRF1009H MMRF1009HR5 MMRF1009HSR5 MMRF1009HR5 PDF

    UT-90-25

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1305H Rev. 0, 12/2013 RF Power LDMOS Transistors MMRF1305HR5 MMRF1305HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or


    Original     		MMRF1305H MMRF1305HR5 MMRF1305HSR5 MMRF1305HR5 UT-90-25 PDF

    AF125

    Abstract: n345 pioneer amplifier an214 diode t25 4 d9 DIODE T25-4 AY102 AF155 AN214 amplifier horizontal driver transistor D155 IC AN214
    Text: Virtex -E 1.8 V Field Programmable Gate Arrays R DS022-1 v2.3 July 17, 2002 Production Product Specification Features • • • • • Fast, High-Density 1.8 V FPGA Family - Densities from 58 k to 4 M system gates - 130 MHz internal performance (four LUT levels)


    Original     		DS022-1 32/64-bit, 66-MHz XCV1000E, 1600E, 2000E" DS022-1, DS022-2, DS022-4 DS022-3, AF125 n345 pioneer amplifier an214 diode t25 4 d9 DIODE T25-4 AY102 AF155 AN214 amplifier horizontal driver transistor D155 IC AN214 PDF

    mrf8s21140hs

    Abstract: MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L MRF8S21140HR3 j491
    Text: Document Number: MRF8S21140H Rev. 0, 5/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S21140HR3 MRF8S21140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21140H MRF8S21140HR3 MRF8S21140HSR3 MRF8S21140HR3 mrf8s21140hs MRF8S21140H MRF8S21140HSR3 MRF8S21140 MRF8S21140HSR AN1955 JESD22-A114 GRM43ER61H475MA88L j491 PDF

    232272461009

    Abstract: MRF8S21120H MRF8S21120HS PHYCOMP 2222 AN1955 j814 2222 120 18221
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21120H MRF8S21120HR3 MRF8S21120HSR3 MRF8S21120HR3 232272461009 MRF8S21120H MRF8S21120HS PHYCOMP 2222 AN1955 j814 2222 120 18221 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies


    Original     		MRF8S21120H MRF8S21120HR3 MRF8S21120HSR3 MRF8S21120HR3 PDF

    D260-4118-0000

    Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to


    Original     		MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac PDF

    atc 17-25

    Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of


    Original     		AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027 PDF

    G2225X7R225KT3AB

    Abstract: MRF6V12250HSR3 AN1955 MRF6V12250HR3 J162 250GX-0300-55-22
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12250H Rev. 2, 4/2010 RF Power Field Effect Transistors MRF6V12250HR3 MRF6V12250HSR3 N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies


    Original     		MRF6V12250H MRF6V12250HR3 MRF6V12250HSR3 MRF6V12250HR3 G2225X7R225KT3AB MRF6V12250HSR3 AN1955 J162 250GX-0300-55-22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.


    Original     		BLF8G38LS-75V PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 3, 6/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies


    Original     		MRF6V12500H MRF6V12500HR3 MRF6V12500HSR3 MRF6V12500HR3 PDF