Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PA1911
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1911 is a switching device which can be driven
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PA1911
PA1911
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MAX5360NEUK
Abstract: MAX5360 MAX5360LEUK MAX5360MEUK MAX5360PEUK MAX5361 MAX5361LEUK MAX5361MEUK MAX5362
Text: 19-1785; Rev 2; 3/11 Low-Cost, Low-Power 6-Bit DACs with 2-Wire Serial Interface in SOT23 Package The MAX5360/MAX5361/MAX5362 are low-cost, 6-bit digital-to-analog converters DACs in miniature 5-pin SOT23 packages with a simple 2-wire serial interface that allows communication with multiple devices. The
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MAX5360/MAX5361/MAX5362
MAX5360
MAX5361
MAX5362
400kbps,
MAX5360/MAX5361/MAX5362
MAX5360NEUK
MAX5360LEUK
MAX5360MEUK
MAX5360PEUK
MAX5361LEUK
MAX5361MEUK
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LT 5251
Abstract: DYNSLT ON5292 vn 530 sp 31 x 132 SC41-5715-00 BA 59 04 AFP LT 542 seven segment display data sheet 7 segment display LT 542 SST 90A 6B Diode NBR4
Text: AS/400e DDS Reference Version 4 AS/400e DDS Reference Version 4 Copyright International Business Machines Corporation 1999, 2000. All rights reserved. US Government Users Restricted Rights – Use, duplication or disclosure restricted by GSA ADP Schedule Contract
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AS/400e
OS/400
LT 5251
DYNSLT
ON5292
vn 530 sp 31 x 132
SC41-5715-00
BA 59 04 AFP
LT 542 seven segment display data sheet
7 segment display LT 542
SST 90A 6B Diode
NBR4
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2SJ557
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
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2SJ557
2SJ557
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PA1813
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D1380
Abstract: 2SK3107 SC-75
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PA611TA
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2857
Abstract: D1164
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Transistor TT 2246
Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23
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3/SOT-23
6/SOT-23
10/uMAX
3/SC-70
Transistor TT 2246
TT 2206 datasheet
apm 4906
TT 2206
transistor tt 2206
tt 2246
bt 7377
SOT-23 AAAA
bc 5478
AAXZ
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jd 1801 data sheet
Abstract: AAAM SOT23-6 ABAA sot23 SOT23-6 JD 1801 fm 4213 ic AAHB LM 1117 bs33 SOT23-6 AAFQ
Text: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − August 31, 2003 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A IM3−2.1 FZEF SOT23−3 MAX 809L UR AA SOT23−3 LM
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OT23-3
SC70-5
SC70-4
SC70-3
SC70-3143
jd 1801 data sheet
AAAM SOT23-6
ABAA sot23
SOT23-6
JD 1801
fm 4213 ic
AAHB
LM 1117
bs33
SOT23-6 AAFQ
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UPA1856GR
Abstract: PA1856 PA1856GR-9JG
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5 V power source. The µPA1856 features a low on-state resistance and
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PA1856
PA1856
UPA1856GR
PA1856GR-9JG
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toshiba laptop schematic diagram
Abstract: acer motherboard circuit diagram MAX1270 C source code MAX11871 mp 9141 es dc-dc lm324 pwm speed motor 220v DC MOTOR SPEED CONTROLLER schematic ACER laptop schematic diagram L-band down converter for satellite tuner wideband acer laptop MOTHERBOARD Chip Level MANUAL acer laptop motherboard circuit diagram
Text: Welcome to the Maxim Full-Line Data Catalog. We hope you find this CD-ROM a helpful tool for selecting the best Maxim IC for your design. This CD-ROM contains: The Maxim Full-Line Data Catalog The menu to the left of this page lists the available documents. Use the small
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d1273
Abstract: PA1851
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1851 is a switching device which can be driven directly by a 4.0-V power source. The µPA1851 features a low on-state resistance and
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PA1851
PA1851
PA1851GR-9JG
d1273
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PA1813
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and
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PA1813
PA1813
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2SK2858
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 0.3 +0.1 –0 2.5-V power source.
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2SK2858
2SK2858
SC-70
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TM1153
Abstract: mPD784216 sony 1435 diagram
Text: mPD784054 16-BIT SINGLE-CHIP MICROCONTROLLERS PRELIMINARY HARDWARE VOLUME Document No. U11719EJ1V0UM00 (1st edition) Date Published October 1996 P Printed in Japan 1994 1996 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
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mPD784054
16-BIT
U11719EJ1V0UM00
TM1153
mPD784216
sony 1435 diagram
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rg4 37
Abstract: IE-78K4-NS CY317
Text: User’s Manual mPD784054 16-bit Single-chip Microcontrollers Hardware mPD784054 mPD784054 A mPD784054(A1) mPD784054(A2) Document No. U11719EJ2V0UM00 (2nd edition) Date Published February 1998 N CP(K) 1996 Printed in Japan 1 [MEMO] 2 NOTES FOR CMOS DEVICES
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mPD784054
16-bit
mPD784054
U11719EJ2V0UM00
rg4 37
IE-78K4-NS
CY317
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PA1913
Abstract: UPA1913TE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5 V power source • Low on-state resistance
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PA1913
PA1913
UPA1913TE
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 2.5-V power source. 1.25 ± 0.1
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2SK2858
2SK2858
SC-70
D11706EJ2V0DS00
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Untitled
Abstract: No abstract text available
Text: CHAPTER 22 INTERRUPT FUNCTIONS The ¿¿PD784038 is provided with three interrupt request service modes see Table 22-1 . These three service modes can be set as required in the program. However interrupt service by macro service can only be selected for interrupt request
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PD784038
PD784038Y
juPD784038
PD4711A
RS-232-C
PD75108
PD78014
bM27525
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3107 is a switching device which can be driven directly by a 0.3 ±0.05 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for
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2SK3107
2SK3107
SC-75
13802E
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Untitled
Abstract: No abstract text available
Text: CHAPTER 1 GENERAL The juPD784046 subseries comprises 78K/IV series products that incorporates 10-bit A/D converter. The 78K/IV series comprises 16-bit single-chip microcontrollers equipped with a high-performance CPU that has a function such as accessing a
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juPD784046
78K/IV
10-bit
16-bit
PD784046
64K-byte
2048-byte
10-bit
juPD784044
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 9 1 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1914 is a switching device which can be driven directly by a 4 V power source.
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JUPA1914
D13810EJ1V0DS00
PA1914
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