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    AEC-Q101 TRANSISTOR HOLE Search Results

    AEC-Q101 TRANSISTOR HOLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    AEC-Q101 TRANSISTOR HOLE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MJB44H11T4-A Automotive-grade low voltage NPN power transistor Datasheet - production data Features • Designed for automotive applications and AEC- Q101 qualified TAB • Low collector-emitter saturation voltage • Fast switching speed 3 Applications 1


    Original     		PDF MJB44H11T4-A MJB44H11-A DocID026340

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101


    Original     		PDF SMBTA06UPN EHA07177

    MARKING CODE CCB

    Abstract: infineon marking W1s marking code w1s SC74 SMBTA06UPN
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage 4 • Low collector-emitter saturation voltage 3 5 2 6 • Two galvanic internal isolated NPN/PNP 1 Transistor in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101


    Original     		PDF SMBTA06UPN EHA07177 MARKING CODE CCB infineon marking W1s marking code w1s SC74 SMBTA06UPN

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801

    hitag application note

    Abstract: No abstract text available
    Text: BUK652R1-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 5 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK652R1-30C hitag application note

    marking CODE 1BS

    Abstract: 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package 1)


    Original     		PDF BC817UPN EHA07177 marking CODE 1BS 1BS transistor BC817UPN BCW66H SC74 marking code w1s transistor 1Bs TRANSISTOR marking CB code

    transistor 1Bs

    Abstract: 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s
    Text: BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-emitter saturation voltage 1 • Two galvanic internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package


    Original     		PDF BC817UPN EHA07177 transistor 1Bs 1BS MARKING CODE B 817 c marking CODE 1BS infineon marking W1s marking code w1s

    Untitled

    Abstract: No abstract text available
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		PDF BCR10PN EHA07176 OT-363 EHA07193

    Untitled

    Abstract: No abstract text available
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		PDF BCR08PN EHA07176 OT-363 EHA07193

    infineon marking W1s

    Abstract: BCR108S BCR22PN marking code w1s
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ)


    Original     		PDF BCR22PN EHA07176 OT-363 EHA07193 infineon marking W1s BCR108S BCR22PN marking code w1s

    infineon marking W1s

    Abstract: BCR08PN BCR108S marking code w1s
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		PDF BCR08PN EHA07176 OT-363 EHA07193 infineon marking W1s BCR08PN BCR108S marking code w1s

    marking 215

    Abstract: MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)


    Original     		PDF BCR35PN EHA07176 EHA07193 OT-363 OT363 marking 215 MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN

    marking WPs

    Abstract: No abstract text available
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)


    Original     		PDF BCR22PN EHA07176 EHA07193 OT-363 OT363 marking WPs

    hitag application note

    Abstract: No abstract text available
    Text: BUK652R6-40C N-channel TrenchMOS FET Rev. 01 — 5 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK652R6-40C hitag application note

    Untitled

    Abstract: No abstract text available
    Text: BCR22PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=22 kΩ, R2 =22 kΩ)


    Original     		PDF BCR22PN EHA07176 OT-363 EHA07193

    Untitled

    Abstract: No abstract text available
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)


    Original     		PDF BCR35PN EHA07176 OT-363 EHA07193

    Untitled

    Abstract: No abstract text available
    Text: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)


    Original     		PDF BCR08PN EHA07176 EHA07193 OT-363 OT363

    infineon marking W1s

    Abstract: BCR108S BCR35PN
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2=47 kΩ)


    Original     		PDF BCR35PN EHA07176 OT-363 EHA07193 infineon marking W1s BCR108S BCR35PN

    marking code w1s

    Abstract: infineon marking W1s
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		PDF BCR10PN EHA07176 EHA07193 OT-363 OT363 marking code w1s infineon marking W1s

    BCR10PN

    Abstract: BCR108S MARKING w1s sot363
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		PDF BCR10PN EHA07176 OT-363 EHA07193 BCR10PN BCR108S MARKING w1s sot363

    infineon marking W1s

    Abstract: marking code w1s marking 215 marking B1 sot363
    Text: BCR10PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =10 kΩ)


    Original     		PDF BCR10PN EHA07176 EHA07193 OT-363 OT363 infineon marking W1s marking code w1s marking 215 marking B1 sot363

    MARKING CODE wus SOT363

    Abstract: No abstract text available
    Text: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)


    Original     		PDF BCR35PN EHA07176 EHA07193 OT-363 OT363 MARKING CODE wus SOT363

    buk654r0

    Abstract: hitag application note
    Text: BUK654R0-75C N-channel TrenchMOS FET Rev. 01 — 6 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK654R0-75C buk654r0 hitag application note

    transistor marking code wts

    Abstract: No abstract text available
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF BCR48PN OT-363 EHA07176 EHA07193 OT363 transistor marking code wts