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    AFH RESERVED FLASH MEMORY CONTROL STATUS REGISTER Search Results

    AFH RESERVED FLASH MEMORY CONTROL STATUS REGISTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    AFH RESERVED FLASH MEMORY CONTROL STATUS REGISTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1d3e

    Abstract: IC c399 D1021E
    Text: BIG MEMORY 56 P1.0 / T2 / PWM0 A,source 1,2 12 Rn register addressing using R0-R7 2 1 P1.1 / T2EX / PWM1 ADD A,#data bit 8bit direct address of bit 8 10 1,2 12 rel signed 8bit offset 9 11 P1.4 / AIN1 1 24 addr11 11bit address in current 2K page 10 12 P1.5 / AIN2


    Original     		PDF 00h-FFh) data16 16bit addr11 11bit addr16 ADuC834 1d3e IC c399 D1021E

    IC c399

    Abstract: P1217
    Text: BIG MEMORY 56 P1.0 / T2 / PWM0 A,source 1,2 12 Rn register addressing using R0-R7 2 1 P1.1 / T2EX / PWM1 ADD A,#data bit 8bit direct address of bit 8 10 1,2 12 rel signed 8bit offset 9 11 P1.4 / AIN1 1 24 addr11 11bit address in current 2K page 10 12 P1.5 / AIN2


    Original     		PDF 00h-FFh) data16 16bit addr11 11bit addr16 ADuC836 IC c399 P1217

    dmf605

    Abstract: optrex dmf660n SAMSUNG UG-13B01 DMF660N DMF666AN LM64032 lm24010z LM721XBNP msm 8255 DMF651
    Text: TECHNICAL USER’S MANUAL FOR: Euro Board MSE286 O:\SEKRETAR\HANDBUCH\MSE286.DOC Nordstr. 4F, CH-4542 Luterbach Tel.: +41 0 32 681 53 33 - Fax: +41 (0)32 681 53 31 DIGITAL-LOGIC AG MSE286 Manual V6.1 COPYRIGHT  1992-95 BY DIGITAL-LOGIC AG No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, in


    Original     		PDF MSE286 \SEKRETAR\HANDBUCH\MSE286 CH-4542 MSE286 RS232 dmf605 optrex dmf660n SAMSUNG UG-13B01 DMF660N DMF666AN LM64032 lm24010z LM721XBNP msm 8255 DMF651

    SAMSUNG UG-13B01

    Abstract: DMF666AN samsung ug-13b01 service manual DMF651 dmf660n optrex dmf660n eg2401 LM24010Z UG-13B-01 dmf605
    Text: TECHNICAL USER’S MANUAL FOR: PC/104 Board MSM286 O:\TEXT\HANDB-V6\MSM286.DOC Nordstrasse 4F, CH-4542 Luterbach Tel.: +41 0 65 41 53 36 - Fax: +41 (0)65 42 36 50 DIGITAL-LOGIC AG MSM286 Manual V6.4 COPYRIGHT  1992-95 BY DIGITAL-LOGIC AG No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, in


    Original     		PDF PC/104 MSM286 \TEXT\HANDB-V6\MSM286 CH-4542 MSM286 RS232 SAMSUNG UG-13B01 DMF666AN samsung ug-13b01 service manual DMF651 dmf660n optrex dmf660n eg2401 LM24010Z UG-13B-01 dmf605

    FAH15

    Abstract: ADuC84X CFG842 aduc842 R017H A4H1
    Text: return from sub. return from int. jump jump if C set jmp if C not set jump if bit set jmp if bit not set jmp&clear if set jump if A = 0 jump if A not 0 compare and jump if not equal decrement and jump if not zero no operation Legend Rn register addressing using R0-R7


    Original     		PDF 00h-FFh) FAH15 ADuC84X CFG842 aduc842 R017H A4H1

    TRS-150

    Abstract: No abstract text available
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02C1630E1AM Advance Information N02C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF N02C1630E1AM 66-Ball 32K-word 128K-words 23134-C TRS-150

    N04C1630E1AM

    Abstract: N04C1630E1AM-9TI
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04C1630E1AM Advance Information N04C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF N04C1630E1AM 66-Ball 32K-word 256K-words 12V25 23133-E N04C1630E1AM N04C1630E1AM-9TI

    N02C1630E1AM

    Abstract: N02C1630E1AM-9TI
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02C1630E1AM Advance Information N02C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF N02C1630E1AM 66-Ball 32K-word 128K-words 23134-E 800ns N02C1630E1AM N02C1630E1AM-9TI

    N02C1630E1AM

    Abstract: N02C1630E1AM-9TI
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02C1630E1AM Advance Information N02C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF N02C1630E1AM 66-Ball 32K-word 128K-words 23134-D N02C1630E1AM N02C1630E1AM-9TI

    N04C1630E1AM

    Abstract: N04C1630E1AM-9TI 16K-PAGE
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04C1630E1AM Advance Information N04C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF N04C1630E1AM 66-Ball 32K-word 256K-words 23133-F 800ns N04C1630E1AM N04C1630E1AM-9TI 16K-PAGE

    231-33

    Abstract: No abstract text available
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04C1630E1AM Advance Information N04C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF N04C1630E1AM 66-Ball 32K-word 256K-words 23133-D 231-33

    ES651

    Abstract: EM28C1604C3FL
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information EM28C1604C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF EM28C1604C3FL 66-Ball 32K-word 256K-words 3133-A ES651 EM28C1604C3FL

    FY220

    Abstract: FW221 EM28C1602C3FL
    Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information EM28C1602C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View


    Original     		PDF EM28C1602C3FL 66-Ball 32K-word 128K-words 3134-A FY220 FW221 EM28C1602C3FL

    FBH15

    Abstract: r3013h AD148
    Text: P1.0 / ADC0 / T2 1 P1.1 / ADC1 / T2EX direct 8bit internal address 00h-FFh 3 2 P1.2 / ADC2 @Ri indirect addressing using R0 or R1 4 3 P1.3 / ADC3 source any of [Rn, direct, @Ri] 5 4,5 dest any of [Rn, direct, @Ri] #data 8bit constant included in instruction


    Original     		PDF 00h-FFh) data16 16bit FBH15 r3013h AD148

    fw610

    Abstract: CSM 8A Code TRS-150 sample code read the flash memory manufacture id MT28F160C3 MARK SR1
    Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF MT28F160C3 46-Ball 32K-word 110ns 128-bit MT28F160C3 fw610 CSM 8A Code TRS-150 sample code read the flash memory manufacture id MARK SR1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT Top View 46-Ball FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF 32K-word 110ns 128-bit MT28F160C3 46-Ball MT28F160C3

    FX615

    Abstract: C8000H MT28F160C34 micron flash otp
    Text: ADVANCE‡ 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C34 FEATURES • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks • VCC, VCCQ and VPP voltages: 3.3V ±5% VCC 3.3V ±5% VCCQ 1.65V–3.465V and 12V VPP


    Original     		PDF MT28F160C34 32K-word 128-bit 46-Ball MT28F160C34 FX615 C8000H micron flash otp

    fw610

    Abstract: No abstract text available
    Text: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF 32K-word 110ns 128-bit MT28F160C3 46-Pin MT28F160C3 fw610

    fw610

    Abstract: MT28F160C3FD-9 BET TRS-150 MT28F160C3 TOP SIDE MARKING OF MICRON micron flash otp
    Text: ADVANCE 1 MEG x 16 3V ENHANCED+ BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F160C3 Low Voltage, Extended Temperature FEATURES PIN ASSIGNMENT Top View 46-Pin FBGA • Thirty-nine erase blocks: Eight 4K-word parameter blocks Thirty-one 32K-word main memory blocks


    Original     		PDF MT28F160C3 46-Pin 32K-word 110ns 128-bit MT28F160C3 fw610 MT28F160C3FD-9 BET TRS-150 TOP SIDE MARKING OF MICRON micron flash otp

    RN 835

    Abstract: ADuC845 D9H41 3529h PRE3
    Text: ACALL addr11 LCALL addr16 RET RETI AJMP addr11 LJMP addr16 SJMP rel JMP @A+DPTR JC rel JNC rel JB bit,rel JNB bit,rel JBC bit,rel JZ rel JNZ rel CJNE A,direct,rel CJNE A,#data,rel CJNE Rn,#data,rel CJNE @Ri,#data,rel DJNZ Rn,rel DJNZ direct, rel NOP call subroutine


    Original     		PDF addr11 addr16 RN 835 ADuC845 D9H41 3529h PRE3

    working and block diagram of ups

    Abstract: CSM 8A Code
    Text: ADVANCE 1 MEG x 16 DUAL BANK BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F162A3 Low Voltage, Extended Temperature FEATURES 48-Pin FBGA • Thirty-nine erase blocks: Bank a 4Mb for data storage - Two 4K-word boot blocks (protected) - Six 4K-word parameter blocks


    Original     		PDF MT28F162A3 48-Pin 32K-word 110ns MT28F162A3 working and block diagram of ups CSM 8A Code

    sst25vf0808

    Abstract: No abstract text available
    Text: 8 Mbit SPI Serial Flash SST25VF080 SST25VF0808Mb Serial Peripheral Interface SPI flash memory Advance Information FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V for SST25VF080 • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3


    Original     		PDF SST25VF080 SST25VF0808Mb 08-soic-EIAJ-S2A-2 S71250-01-000 sst25vf0808

    BPL TV

    Abstract: SST25VF010-20-4C-SAE SST25VF010
    Text: 1 Mbit SPI Serial Flash SST25VF010 SST25VF0101Mb Serial Peripheral Interface SPI flash memory Data Sheet FEATURES: • Single 2.7-3.6V Read and Write Operations • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • 20 MHz Max Clock Frequency


    Original     		PDF SST25VF010 SST25VF0101Mb S71233 S71192 DD029 S71233-03-000 BPL TV SST25VF010-20-4C-SAE SST25VF010

    sst25vf0808

    Abstract: SST25VF080-20-4C-S2A SST25VF0808 50 SST25VF080 S71250-00-000 BPL TV POWER SUPPLY 006-SI
    Text: 8 Mbit SPI Serial Flash SST25VF080 SST25VF0808 Mb Serial Peripheral Interface SPI flash memory Advance Information FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V for SST25VF080 • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3


    Original     		PDF SST25VF080 SST25VF0808 08-soic-EIAJ-S2A-2 S71250-00-000 SST25VF080-20-4C-S2A SST25VF0808 50 SST25VF080 S71250-00-000 BPL TV POWER SUPPLY 006-SI