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    AFT20 Search Results

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    AFT20 Price and Stock

    NXP Semiconductors AFT20S015GNR1

    RF MOSFET LDMOS 28V TO270-2
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    DigiKey AFT20S015GNR1 Digi-Reel 639 1
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    AFT20S015GNR1 Cut Tape 639 1
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    AFT20S015GNR1 Cut Tape 1
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    Rochester Electronics AFT20S015GNR1 21 1
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    Richardson RFPD AFT20S015GNR1 500
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    NXP Semiconductors AFT20S015NR1

    RF MOSFET LDMOS 28V TO270-2
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    DigiKey AFT20S015NR1 Cut Tape 397 1
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    AFT20S015NR1 Digi-Reel 397 1
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    AFT20S015NR1 Reel 500
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    Newark AFT20S015NR1 Reel 500
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    Quest Components AFT20S015NR1 14
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    Rochester Electronics AFT20S015NR1 1,373 1
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    Richardson RFPD AFT20S015NR1 1
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    Avnet Silica AFT20S015NR1 12 Weeks 500
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    Panasonic Electronic Components LP-AFT20

    LASER MARKER
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    SEI Stackpole Electronics Inc WW2AFT200R

    RES 200 OHM 1% 2.5W AXIAL
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    DigiKey WW2AFT200R Reel 2,000
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    NAC WW2AFT200R 2,000
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    SEI Stackpole Electronics Inc WW2AFT20R0

    RES 20 OHM 1% 2.5W AXIAL
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    DigiKey WW2AFT20R0 Reel 2,000
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    AFT20 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AFT20P060-4GNR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF LDMOS 6.3W OM780-4GW Original PDF
    AFT20P060-4NR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRAN RF 2GHZ 6.3W OM780-4 Original PDF
    AFT20P140-4WGNR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF LDMOS 24W OM780-4GW Original PDF
    AFT20P140-4WNR3 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF 2GHZ 24W OM780-4 Original PDF
    AFT20S015GNR1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRAN RF 1.8-2.7G 1.5W TO270-2G Original PDF
    AFT20S015NR1 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, TRANS RF 1.8-2.7G 15W TO270-2 Original PDF

    AFT20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original
    AFT20P140--4WN AFT20P140-4WNR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5/06 AFT20013 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20013 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Reverse Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20013 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5/06 AFT20012 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20012 Typical Values Low DC Power Consumption. . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20012 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5/06 AFT20013 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20013 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Reverse Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 9/08 AFT20013 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20013 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Reverse Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 9/08 AFT20012 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20012 Typical Values Low DC Power Consumption. . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20012 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 9/08 AFT20012 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20012 Typical Values Low DC Power Consumption. . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20012 PDF

    C5750X7S2A106KT

    Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original
    AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501 PDF

    c5750x7s2a106m

    Abstract: AD255A mosfet mttf aft20p06
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original
    AFT20P060--4N AFT20P060-4NR3 DataAFT20P060--4N 1/2013Semiconductor, c5750x7s2a106m AD255A mosfet mttf aft20p06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original
    AFT20P060--4N AFT20P060 AFT20P060-4NR3 1/2013Semiconductor, PDF

    Untitled

    Abstract: No abstract text available
    Text: 5/06 AFT20012 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20012 Typical Values Low DC Power Consumption. . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20012 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20S015N Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.


    Original
    AFT20S015N AFT20S015NR1 AFT20S015GNR1 AFT20S015NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 9/08 AFT20013 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20013 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Reverse Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original
    AFT20P140--4WN 1880-2025dated AFT20P140-4WNR3 AFT20P140-4WGNR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 8/09 AFT20012 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20012 Typical Values Low DC Power Consumption. . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20012 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5/06 AFT20012 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20012 Typical Values Low DC Power Consumption. . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20012 PDF

    AFT20S015N

    Abstract: AFT20S015GNR1 capacitor 475 aft20s015gn AFT20S015 ATC100B6R8CT500XT ATC800B C3225X7R1H225KT MCGPR63V477M13X26-RH capacitor 10 MF
    Text: Document Number: AFT20S015N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 1.5 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2690 MHz.


    Original
    AFT20S015N O-270-2 AFT20S015NR1 AFT20S015NR1 AFT20S015GNR1 AFT20S015GNR1 capacitor 475 aft20s015gn AFT20S015 ATC100B6R8CT500XT ATC800B C3225X7R1H225KT MCGPR63V477M13X26-RH capacitor 10 MF PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 1, 12/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 6.3 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original
    AFT20P060--4N AFT20P060-4NR3 AFT20P060-4GNR3 AFT20P060-4NR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 8/09 AFT20013 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20013 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Reverse Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 5/10 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20013 AFT20013 Typical Values High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Reverse Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 5/10 6.0 TO 20.0 GHz 6 LEADED MICROWAVE AMPLIFIER AFT20012 AFT20012 Typical Values Low DC Power Consumption . . . . . . . . . . . . . . . . . . . . . . Medium Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Leaded Microwave Package


    Original
    AFT20012 AFT20012 AFT2001 PDF

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original
    PDF

    12v dc to 12v ct

    Abstract: AN5826NK multi 9 CT
    Text: AN 5826N K AN5826NK T- U' M ultiplex Sound System Demodulator C ircuit mm. 9 a n 5 8 2 6 n k i ì , f- is e Uni t * mm w j » i c t a i t ? l<r •w a 1 * • ■ / - / -c-writ l t * , o , • ? > '* 9 h 15:1+¿ ' “Tfig • ^ • PLL »28 »27 3>26 »25


    OCR Scan
    AN5826NK 28-Lead 12v dc to 12v ct AN5826NK multi 9 CT PDF

    cd7611cp

    Abstract: chmc TA7607AP D7611 CHMC 37 CD7611 Shaoxing Silicore Technology d7607 CHMC IC ta7607
    Text: Silicore V ID E O IF A M P L I F I E R F O R C O L O R AND M O N O C H R O M E T E L E V IS IO N R E C E IV E R CHMC C D 7 6 0 7 C P / C D 7 611C P FU N C TIO N • Three Controlled IF A mplifier stages • Video Demodulator Controlled by Picture Carrier • Black Noise and White Noise In\-erter


    OCR Scan
    CD7607CP/CD7611CP 58MHz cd7611cp chmc TA7607AP D7611 CHMC 37 CD7611 Shaoxing Silicore Technology d7607 CHMC IC ta7607 PDF