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NXP Semiconductors AFT26HW050SR3 RF MOSFET LDMOS 28V NI780
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AFT26HW050SR3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	AFT26HW050SR3		500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics AFT26HW050SR3 RF MOSFET LDMOS 28V NI780
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AFT26HW050SR3	Bulk			10	1 - 10 $55.48 100 $55.48 1000 $55.48 10000 $55.48	Buy Now
Rochester Electronics LLC AFT26HW050SR3 RF MOSFET LDMOS 28V NI780
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AFT26HW050SR3	Bulk			4	1 - 10 $80.82 100 $80.82 1000 $80.82 10000 $80.82	Buy Now
Freescale Semiconductor AFT26HW050SR3 RF Power Field-Effect Transistor, N-Channel, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	AFT26HW050SR3		4,794		1	1 $77.71 10 $77.71 100 $73.05 1000 $66.05 10000 $66.05	Buy Now

AFT26HW050S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AFT26HW050SR3		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, TRANS RF 2.6GHZ 9W NI780-4S4		Original	PDF

AFT26HW050S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
WELWYN c21 Abstract: No abstract text available Text: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous	Original	AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 6/2013Semiconductor, WELWYN c21	PDF
WELWYN c21 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT26HW050S Rev. 2, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous	Original	AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 7/2013Semiconductor, WELWYN c21	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26HW050S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous	Original	AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 5/2013Semiconductor,	PDF
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original		PDF