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    AGR18060EF Price and Stock

    Advanced Semiconductor Inc AGR18060EF

    RF MOSFET Transistors 1.8-1.88GHz 60Watt Gain 14dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR18060EF
    • 1 $79.69
    • 10 $67.82
    • 100 $63.01
    • 1000 $63.01
    • 10000 $63.01
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    AGR18060EF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR18060EF Agere Systems MOSFET Original PDF

    AGR18060EF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original
    PDF AGR18060E Hz--1880 AGR18060EU AGR18060EF DS04-032RFPP DS02-325RFPP)

    AGR18060E

    Abstract: AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114 100B100JCA500X
    Text: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global


    Original
    PDF AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114 100B100JCA500X

    transistor A114

    Abstract: c101 TRANSISTOR transistor C101 AGR18060E AGR18060EF AGR18060EU JESD22-A114
    Text: Preliminary Product Brief May 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for


    Original
    PDF AGR18060E AGR18060E PB03-105RFPP PB03-064RFPP) transistor A114 c101 TRANSISTOR transistor C101 AGR18060EF AGR18060EU JESD22-A114

    100B8R2JCA500X

    Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114
    Text: AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global


    Original
    PDF AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF 100B8R2JCA500X 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-A114

    "RF Power Amplifier"

    Abstract: 100B100JCA500X AGR18060E AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X
    Text: Preliminary Data Sheet April 2004 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original
    PDF AGR18060E Hz--1880 AGR18060E AGR18060EU AGR18060EF DS04-156RFPP DS04-032RFPP) "RF Power Amplifier" 100B100JCA500X AGR18060EF AGR18060EU CDR33BX104AKWS JESD22-C101A 100B8R2JCA500X

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original
    PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM

    AGR18060EF

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for


    Original
    PDF AGR18060E PB03-171RFPP PB03-105RFPP) AGR18060EF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for


    Original
    PDF AGR18060E AGR18060E AGR18060EU AGR18060EF DS02-325RFPP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief March 2003 AGR18060E 60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for


    Original
    PDF AGR18060E AGR18060E amplifie-712-4106) PB03-064RFPP