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    AGR18090E Price and Stock

    Advanced Semiconductor Inc AGR18090EF

    RF MOSFET Transistors 1.8-1.88GHz 90Watt Gain 14dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR18090EF
    • 1 $76.43
    • 10 $64.96
    • 100 $60.39
    • 1000 $60.39
    • 10000 $60.39
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    AGR18090E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR18090E Agere Systems Original PDF
    AGR18090E TriQuint Semiconductor 90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor Original PDF
    AGR18090EF Agere Systems MOSFET Original PDF
    AGR18090EU Agere Systems MOSFET Original PDF
    AGR18090EU Agere Systems 90 W, 1.805 GHz - 1.880 GHz, LDMOS RF Power Transistor Original PDF

    AGR18090E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PB03-065RFPP

    Abstract: AGR18090EF c101 TRANSISTOR transistor A114 transistor C101 AGR18090EU JESD22-A114 AGR18090E PB03-090RFPP
    Text: Preliminary Product Brief April 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for


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    PDF AGR18090E AGR18090E PB03-090RFPP PB03-065RFPP) PB03-065RFPP AGR18090EF c101 TRANSISTOR transistor A114 transistor C101 AGR18090EU JESD22-A114 PB03-090RFPP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original
    PDF AGR18090E Characteristic10-12, DS04-033RFPP DS02-326RFPP)

    18-12 049 transistor

    Abstract: Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR
    Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


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    PDF AGR18090E AGR18090E amplR21090U AGR18090EF AGR18090F M-AGR21090F 12-digit 18-12 049 transistor Transistor J182 TRANSISTOR Z10 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-A114 RF POWER TRANSISTOR

    J182 transistor

    Abstract: "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090E AGR18090EU C1812C105K5RACTR JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


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    PDF AGR18090E AGR18090E DS04-157RFPP DS04-104RFPP) J182 transistor "RF Power Amplifier" AGR18090EF 100B100JW500X AGR18090EU C1812C105K5RACTR JESD22-C101A

    AGR18090EF

    Abstract: No abstract text available
    Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


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    PDF AGR18090E AGR18090EF

    Transistor J182

    Abstract: No abstract text available
    Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original
    PDF AGR18090E DS02-326RFPP Transistor J182

    gl 3201

    Abstract: No abstract text available
    Text: Product Brief August 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for


    Original
    PDF AGR18090E PB03-172RFPP PB03-090RFPP) gl 3201

    100B100JW500X

    Abstract: AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A
    Text: Preliminary Data Sheet February 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


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    PDF AGR18090E AGR18090E DS04-104RFPP DS04-033RFPP) 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


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    PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


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    PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


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    PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM