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    AGR21180EF Search Results

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    AGR21180EF Price and Stock

    Advanced Semiconductor Inc AGR21180EF

    RF MOSFET Transistors 2.11-2.17GHz 38Watt Gain 14dB
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    Mouser Electronics AGR21180EF
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    • 10 $90.38
    • 100 $86.65
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    AGR21180EF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR21180EF Agere Systems FET, 180W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR21180EF Datasheets Context Search

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    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21180EF TH 2190 HOT Transistor

    TH 2190 HOT Transistor

    Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21
    Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original
    PDF AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21

    TH 2190 HOT Transistor

    Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
    Text: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21180EF AGR21180EF DS04-167RFPP DS04-124RFPP) TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A

    j792

    Abstract: TH 2190 HOT Transistor
    Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21180EF DS04-124RFPP DS02-275RFPP) j792 TH 2190 HOT Transistor

    AGR21180EF

    Abstract: AGR21180EU JESD22-A114
    Text: Preliminary Product Brief April 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21180E AGR21180E AGR21180EU AGR21180EF PB03-097RFPP PB03-072RFPP) AGR21180EF AGR21180EU JESD22-A114

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original
    PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM

    TH 2190 HOT Transistor

    Abstract: No abstract text available
    Text: Preliminary Data Sheet November 2003 AGR21180E 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21180E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original
    PDF AGR21180E AGR21180EU AGR21180EF DS02-275RFPP TH 2190 HOT Transistor