Untitled
Abstract: No abstract text available
Text: CBI All In One UPS Power Solutions CBI All In One UPS Power Solutions combine the requirements for several applications in just one device which can be used as power supply unit, battery charger, battery care module or backup module. The available power is automatically distributed among load and battery, while supplying power to the load
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CBI_Brochure_Final
Abstract: CB Battery
Text: CBI_Brochure_Final.pdf C M Y CM MY CY CMY K 2 3/21/14 4:53 PM CBI_Brochure_Final.pdf 3 3/21/14 CBI Series DC-UPS Solutions pages 4-11 4:53 PM CBI All In One UPS Power Solutions combine the requirements for several applications in just one device which can be used as power supply unit, battery
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65x115x135
100x115x135
150x115x135
45x105x100
CBICB-042014-3M
CBI_Brochure_Final
CB Battery
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AK8406A
Abstract: me 555 XIFG DO-77 Y6766 HC711 kflb aadct
Text: [AK840 6A] AS AH I KASEI m w m - t V > ?m iE Æ 7 m □ ccd , D X t l t f x ^ - f s ^ t°-^7 u^ l □ A*l 1/-h AK 8 4 0 6 A K A '> 7 . ±mm m ^ / ^ y ± y b^mm^^zsmiE) 2 5 O m V p - p ~ l . 1 5 V P-P ( 7 7 7 v a A D C A ^ i l ) ft:*: □ Ä * 8 1 8 4 H ^ C D i r > + I - S T ^ J S bJ
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AK840
2t777-
0-J-04)
05max
AK8406A
me 555
XIFG
DO-77
Y6766
HC711
kflb
aadct
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Narva
Abstract: TX5B Heft 54 Scans-048 aim ac hoe rv heft hcj 6a IH400 siek 1 AE 1000-SS
Text: p,. c . r y p / i E B C n o n P A H O H H b I M B O n P M H H H B O P A M H 3 A aT e/ibC T B o „ T e x H iK a " K m ob — 1 9 7 0 M 6<D0. 31 0 8 3 T95 YAK 621.327.4/9.(031) CnpaBOHHHK no hohhum npnöopaM. T y p .n e b R . C. «TexHÍK», 1970, 180 crp.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS ¿/Qiìhn TC5508P TC5508P- I 1024 W O R D X 1 B IT CMOS RAM S IL IC O N G A T E CM OS TC5508P-4 DESCRIPTION - i ,e - f r.rv';!-t ora ie:’'i•i the ■ li, i Cuu Oo i ' ncrta h e ' rom st at ic . ,v ; r ; ^ 'ead hv w riie 1 b it
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TC5508P
TC5508P-
TC5508P-4
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M5223JFP
Abstract: M5223 336V LB-45
Text: - M5223 •m % w n tt • g ® ]E ÏG ffl:3 ~ 3 6 V • - V s * ' ta À t t i * ® Œ Ï 5 B •S H H J Í# :1 1 0 d B ty p •t * V h ■ y - X g « / / i ¥ +)* TJanw Ï]H « A JI 2 T]#seAii2 Œ ig lg Œ 36 V OV A * «Œ -0.3—+36 V Ta=25*C !Ê ttÀ * * E E
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M5223
RL62k
20kHz
M5223JFP
M5223JFP
336V
LB-45
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2T931A
Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K
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MOKP51KOB,
KTC631
TI2023
II2033
TT213
TI216
fI217
II302
XI306
n306A
2T931A
KT853
2T926A
KT838A
2T803A
2T809A
2T904A
2T808A
2T603
2T921A
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lzl 24h
Abstract: ICT PRC S7 V55PI 002B8H FARL BP FTR-P3 uA 741 CN IC TTPC UI02 ea423
Text: ^ — 5 i . ì / — h * ih ]S& m o s ü m M O S Integrated Circuit PD70433 ¡1 pTM V55PI 16 ti y h ‘ 7 //PD70433 P 7 °□ -fe *y1J- V55PI Ci, 16 fc'-y I' CPU, RAM, v U A/D H v , DMA =J > h a - 7 , • -f 7 x —T., /\°v l/VU • -Y > ^ 7 i - 7 , h 1
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V55PI
uPD70433
//uPD70433
V55PI)
V55PI
PD70320,
V25TM,
V35TM)
U10514J
lzl 24h
ICT PRC S7
002B8H
FARL BP
FTR-P3
uA 741 CN IC
TTPC
UI02
ea423
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Untitled
Abstract: No abstract text available
Text: Catalog 1307515 Issued 9-99 Z-PACK HS3 2.5mm Connectors Continued Layout Guide for Midplane Applications 10 Row Connectors Non-Coplanar Applications Coplanar Applications Backplane Systems Right Module Right Module e « ja o « .o o < m A <K ¿ YA X T X
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N0120666
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Untitled
Abstract: No abstract text available
Text: smM Specifications in the event of any conflict between these specifications and General Specification MIL-C-39012 and MiL-C-83517 these specifications shall govern These specifications are subject to change according to the latest revision oi MIL-C-39012 and M!L-C-83517.“
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MIL-C-39012
MiL-C-83517
L-C-83517.
Mll-STD-202
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2SC1855
Abstract: No abstract text available
Text: HITACHI 2SC1855 SILICON N'aN V H F A M P u i'.i-H VHP TV VIDEO 1= A J M P tn iR .12*»*. .*» <•* V i ¿^*1 L i . i —s c * i j ? i ^ ö _/ Ï M iß lC T0-S2j MAXIMUM CÖUUECT0R DISSIPATION ■ ABSOLUTE MAXIMUM » T M 6 S %T*»2y& curve »Ir-* •'ST.«?1;
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2SC1855
2SC1S55
2SC1855
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LC7209
Abstract: LT 7207 LC7207 MT 7201 LA5700 f 7207 LC7200 OTICO VR9F LC7250
Text: L C 7 2 0 0 y !J - X NaC 731B _ L C 7 2 0 0 , 7 2 0 1 , 7 2 0 5 , 7 2 0 7 C - M O S 4161 F M / A M M W , L W t ^ i « | ( S L 2 '> X f A ) . / O *-‘# ( * - : L - X N a 7 3 l "¡1 i'e • M •F M (’S l/ W / a h N V-v ?Na73IA)
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LC7200
c73tB
Na73IA)
LC7200
LC7207
Na73l-I5/
1X7209
240KO
lc720i
LC7209
LT 7207
MT 7201
LA5700
f 7207
OTICO
VR9F
LC7250
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74LS04C
Abstract: 8032A-P 8052A-P 8052A SAB 8051 p 8032AP siemens 8032 cpu siemens mov all range INSTRUCTION SET 8085 SAB8051A
Text: M7E D SIEM EN S ô53SbüS SIEG □QEci 7 cî3 0 SIEMENS AKTIENGESELLSCHAF 1 ^ - 0 5 Ö-Bit Single Chip Microcontroller SAB 8052A/8032A Preliminary SAB 8052A-P N Microcontroller with factory-maskprogrammabel ROM SAB 8032A-P(N) Microcontroller for external ROM
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fi535bQ5
002T7T3
052A/8032A
052A-P
032A-P
256x8
16-bit
P-DIP-40
PL-CC-44
MCD00Qt
74LS04C
8032A-P
8052A-P
8052A
SAB 8051 p
8032AP
siemens 8032 cpu
siemens mov all range
INSTRUCTION SET 8085
SAB8051A
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Hall Siemens
Abstract: HYB51471B MARKING AOH
Text: H Ÿ B b141 fiu J /H Ü L - 5 0 fM i ü /i - /U r 2 5 6 k x i 6 - s i t D y n a m ic R A M i M r ñ n n y i a • M r u n i v i M M Ö K X 1Ö B T I t w i u t t i â k i l u i M m n U Y N A iy ïlU u a t c i n |V !t!V !U h |t5 Íy H u n Vp wr w< ■ h■9r i■n
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514171BJ/BJL
256kx16
256kx
HYB51471B
5t4171BJ/BJL
CDAC19400-H/Ag
Hall Siemens
MARKING AOH
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Untitled
Abstract: No abstract text available
Text: High Performance 128Kx8 CMOS Flash KEPROM II AS29F010 AS29F011 5 \ 128KxX CMOS Flash Memory FEATU RES • Organization: 131,072 words x 8 bits • JEDEC standard write cycle commands • Sector Erase architecture - protects data from accidental changes - Four 32K x 8 sectors
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128Kx8
AS29F010
AS29F011
128KxX
32-pin
0DDD337
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Untitled
Abstract: No abstract text available
Text: H M 5 1 2 5 8 S e r i e s 262144-word x 1-bit Static Column CMOS Dynamic RAM The HM51258 is the 262,144 word by 1 bit static column dynamic random access memory utilizing the Hitachi 2/um CMOS process. This device has static column circuit and it is good for
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262144-word
HM51258
HM50256.
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2864 eeprom
Abstract: EEPROM 2864 2864 EEPROM 28 PINS 7921 EE64K8-45 EE64K8 EE64K8-55 EE64K8-70
Text: EE64K8 L Â T H HIGH-SPEED 64K EEPROM 8K X 8 FUNCTIONAL BLOCK DIAGRAM FEATURES • FA S T R E A D A C C E S S = C Y C L E T IM E — E E 64K 8-45: 4 5 n s M ax — E E 64K 8-55: 5 5 n s M ax — E E 6 4 K 8-7 0 . 7 0n s M ax • 5-V O LT-O N LY • LOW POW ER
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EE64K8
EE64K8-45:
EE64K8-55:
EE64K8-70.
EE64K8
536-bit
625/ts.
28-PIN,
2864 eeprom
EEPROM 2864
2864 EEPROM 28 PINS
7921
EE64K8-45
EE64K8-55
EE64K8-70
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MB87078
Abstract: xnnnx MB87078PF MB87078P
Text: August 1992 Edition 2.0A DATA SHEET MB87078 6-bit, 4-channel Electronic Volume Controller The Fujitsu MB87078 * a 6 -bit, 4-<iiannel electronic volume controller. A dgltal signal input controls gain every 0.5 dB step from OdB to -32dB. It has been fabricated in
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MB87078
-32dB.
MB87078
24-pin
D24017S-3C
24-LEAD
FPT-24P-M02)
F24008S-4C
xnnnx
MB87078PF
MB87078P
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44-800-p
Abstract: 44800P PIN DIAGRAM of IC AD 524 IN2045
Text: TMS44800, TMS44800P 524 288-WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS480B-AUGUST1992-REVISED DECEMBER 1992 This data sheet is applicable to all TMS44800/Ps symbolized with Revision“B" and subsequent revisions as described on page 22. * Organization . . . 524 288 x 8
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TMS44800,
TMS44800P
288-WORD
SMHS480B-AUGUST1992-REVISED
TMS44800/Ps
SMHS480B-AUQUST1992-REVISED
TMS44800J
44-800-p
44800P
PIN DIAGRAM of IC AD 524
IN2045
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TR AK40
Abstract: st BC03 RRU W01 AF06 BC-09 ak02 bb04 AG07
Text: 4 Pinout and Signal Descriptions Sections 4.1 and 4.2 list and describe the 21164 microprocessor external signals, and th eir associated pint . 4.1 Pin Assignment The 21164 package has 499 pins aligned in an in te rstitial pin grid array IPGA design. Table 1 lists the ¿1164 signal pins and th eir corresponding pin
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IMS1820E-25
Abstract: IMS1820M IMS1820P-25 IMS1820S-25 IMS1820W-25
Text: IMS1820 CMOS High Performance 64K x 4 Static RAM m o s D ESC R IPTIO N FE ATU R E S The IN M O S IM S1820 is a high perform ance 64Kx4 C M O S Static RAM. The IM S 1820 allows speed enhance m ents to existing 64K x 4 applications w ith the additional benefit of reduced pow er consum ption .
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IMS1820
300-mil
64Kx4
timi52
IMS1820
IMS1820E-25
IMS1820M
IMS1820P-25
IMS1820S-25
IMS1820W-25
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8051 and 8031
Abstract: elektronik DDR 80C525 single chip microcontrollers intel 8751 74LS04C car dashboard 8051 asm amd tu 20 c synergy app abstract 74LS04 amd microcontrollers
Text: a Microcontrollers Advanced Micro Devices 1988 Data Book/Handbook 87C521 87C51 80C51 80515 80535 80C31 8053 fI 8753 8751 8051 8031 a Advanced Micro Devices Microcontroller Handbook 1988 Advanced Micro Devices Advanced Micro Devices reserves the right to make changes in its products without notice in order to
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87C521
87C51
80C51
80C31
8051 and 8031
elektronik DDR
80C525
single chip microcontrollers intel 8751
74LS04C
car dashboard 8051 asm amd
tu 20 c synergy
app abstract
74LS04
amd microcontrollers
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tms4c1024
Abstract: sn74als6302 SN74ALS6301 4C1024 TMS4C1025
Text: TMS4C1024, TMS4C1025, TMS4C1027 1 048 576-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M G S024F — MAY 1986 — R EVISED N O VEM BER 1990 5 0 Package N P ackage Top View This Data Sheet Is Applicable to A ll TMS4C1024/5/7S Symbolized with Revision “D" and Subsequent Revisions as Described
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TMS4C1024,
TMS4C1025,
TMS4C1027
576-BIT
S024F
TMS4C1024/5/7S
tms4c1024
sn74als6302
SN74ALS6301
4C1024
TMS4C1025
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1325FF-7,-8,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1325FF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM
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TC55V1325FF-7
TC55V1325FF
576-bit
LQFP100-P-1420-0
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