Cutler-Hammer Digitrip RMS 310 LSG 50
Abstract: Cutler-Hammer* MDL3800 Cutler-Hammer Digitrip RMS 310 Cutler-Hammer Digitrip RMS 310 rating plug MT2800 Cutler-Hammer Digitrip RMS 310 trip unit mdl3800f TA801MA Cutler-Hammer* MDL 800A mounting MDL3800
Text: PG.74A.01.T.E 061-090 Page 67 Wednesday, March 17, 1999 8:15 AM Cutler-Hammer March 1999 Molded Case Circuit Breakers 300-800 Amperes 67 Series Cா M-Frame Interrupting Capacity Ratings UL489/CSA Interrupting Capacity Ratings➀ Circuit Breaker Type Number of
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UL489/CSA
Cutler-Hammer Digitrip RMS 310 LSG 50
Cutler-Hammer* MDL3800
Cutler-Hammer Digitrip RMS 310
Cutler-Hammer Digitrip RMS 310 rating plug
MT2800
Cutler-Hammer Digitrip RMS 310 trip unit
mdl3800f
TA801MA
Cutler-Hammer* MDL 800A mounting
MDL3800
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MA182
Abstract: MA2B182
Text: Switching Diodes MA2B182 MA182 Silicon epitaxial planar type Unit : mm φ 0.56 max. For high-voltage switching circuits, small power rectification 1 • Features 4.5 max. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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MA2B182
MA182)
DO-35
MA182
MA2B182
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PDU15F
Abstract: PDU15F-1 PDU15F-2 PDU15F-3 PDU15F-4 PDU15F-5 PDU15F-6 PDU15F-8
Text: PDU15F data 3 delay devices, inc. 5-BIT PROGRAMMABLE DELAY LINE SERIES PDU15F FEATURES • • • • • • • • PACKAGES Digitally programmable in 32 delay steps Monotonic delay-versus-address variation Two separate outputs: inverting & non-inverting
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PDU15F
PDU15F)
24-pin
PDU15F-xx
PDU15F-xxA4
PDU15F
PDU15F-1
PDU15F-2
PDU15F-3
PDU15F-4
PDU15F-5
PDU15F-6
PDU15F-8
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Untitled
Abstract: No abstract text available
Text: 10 ENG. NO. 83612-9020 N A T E R IA L NO. 836129020 qpp .715 18.16 S 6 fl as TYP. - 6.78 REF. .125 - HEX. 3.18 2 PLA C E S P A N E L CUT-OUT 2-56 JAC KPO ST 715 2 PLACES ' G OF .186 MAX. .055 .41 10.A 1.A0 RECOMMENDED REF. P A N E L THICKNESS AI .050 1.27
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PS-83A21-9000
SD-83612-002_
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BD188
Abstract: BD190 transistor d 188 80566 10 watt power transistor bd TRANSISTOR BD 187 transistor bd 320 c BD185 BD transistor bd 190
Text: M O T O R O L A SC Í X S T R S / R F3- 6367254 MOTOROLA Th SC DE I b 3 t 7 5 S 4 96D 8 0 5 6 5 CXSTRS/RJF > GOflDShS D MOTOROLA n SEM ICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILIC O N PNP T RA N SIST O R 4 A M PERE POWER T RA N SISTO R . . . designed for use in 5 to 10 Watt audio amplifiers utilizing
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TC40H368P
Abstract: TC40H367P TC40H tc5012bp TC40H367F TC40H367
Text: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA TC40H367P/F TC40H368P/F C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC 4 0 H 3 6 7 HEX BUS B U FFER NONINVERTED 3 -S T A T E OUTPUT T C 4 0H 3 68 HEX BUS B U FFER IN VERTED 3 -S T A T E OUTPUT The TC40H367 and the TC40H368 are hex
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TC40H367P/F
TC40H368P/F
TC40H367
TC40H368
TC40H368P
TC40H367P
TC40H
tc5012bp
TC40H367F
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Untitled
Abstract: No abstract text available
Text: H D 100180 Fast 6-b it Adder The H D 100180 is a High Speed 6 -b it Adder capables o f perform ing as fu ll 6 -b it add itio n o f 2 active lo w Carry Generate, and active lo w Carry operands in 2ns. Inputs fo r the adder are active lo w Carry-ln, Carry Lookahead, as a second order Lookahead
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HD100179,
HD100180
HD100180F
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910-240
Abstract: 2702141
Text: Single - Turret Standoffs ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rt 02893 • Tel. 401 -823-5200 • FAX 401-823-8723 • TWX 9102403454 EMC*Product "STS" Series o Plating: r° nf *14: 400u." Tin terminal, 200u" Cadmium Chromate base/eyelet
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200ii"
400jj.
400ji"
QQ-B-626
MIL-M-14F
910-240
2702141
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AI 186 N
Abstract: CN001 M1515
Text: sMM EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING SD -520 18-6* *5 •S. s. o ro t o o O •r zrx O HVi o o ^ s ¡1 if -j IS o o ro \ m 4 CO ^ CD w i - ig □ PQ$ O w ■e Owr > o 2.3±0.05 2=54±0=05 0J7 1 * SSi m . y~r »hs* 3* S* r+ ig c * 'f I vj
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Untitled
Abstract: No abstract text available
Text: Series 180 Trimming Potentiometer MULTI TURN Linear Features.' • • • • Cermet 19 mm rectangular industrial purpose Low PC board profile Transparent and non transparent housing Precious metal wipers. Shaft, knob and panel mount options Standard Resistance
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o30dam
DPLOS001
c25ctaam
MIL-R-22097
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D237A
Abstract: NPN Transistor 1500V
Text: NPN triple diffuseci planar silicon transistor Package . TO-3PB | / Use Very high-definition color display, horizontal deflection output Features . High speed t^=300ns typ. . High breakdown voltage (V c b q =1500V) • High reliability (adoption of HVP process)
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300ns
100mA
D237AT-TS
D237A
NPN Transistor 1500V
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pj 67 diode
Abstract: pj 66 diode smd diode code pj smd marking code pJ smd diode code pj 65 Diode smd code PJ marking code LA SMD smd diode code pj 40 Diode type SMD marking PJ smd DIODE code marking Q
Text: Schottky Barrier Diode wnnm o u t l i n e Single Diode M1FS6 Package : M1F 60 V 1.2A A y - K v - '/ Cathode mark Feature • /Jvg aS M D • V f =0.58V • P rrsm ^ C 5 > ì /x |T 6 4 • Small SMD • Low V f=0.58V <SKE • P rrsm Rating • D C/D C • mm. y-A.oAfâgg
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J532-1)
pj 67 diode
pj 66 diode
smd diode code pj
smd marking code pJ
smd diode code pj 65
Diode smd code PJ
marking code LA SMD
smd diode code pj 40
Diode type SMD marking PJ
smd DIODE code marking Q
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Untitled
Abstract: No abstract text available
Text: JUN 2 H ¡Si.' r 19-0123; Rev. 0; 3/93 y k iy jx i> k i Low-Power, 8-Channel, S erial 12-Bit ADCs The 4 -w ire serial interface d ire ctly co n n ects to SPI , QSPI™ and Microwire™ devices without external logic. A serial strobe output allows direct connection to TMS320
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12-Bit
TMS320
MAX186/MAX188
AX186
MIL-STD-883.
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MARKING SMD 43t
Abstract: 43t SMD smd 43t a13g smd 2au smd marking 9T smd diode marking JC DIODE marking VU 49LC AI 186 N
Text: SBD Array Diode Array WWW OUTLINE Package : 1Z S1ZAS4 40 V 1.2A 1,1, m - ; Type NKo. ' Feature • SMD x vH J— _ —I . Dale codc T ï ï Main Use •mm. f - A . IJ 3 2 21 4.7 7 MAX • Switching Regulator • DC/DC Converter • Home Appliance, Game,
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S12AS4
waveli50HÂ
C59SE
J532-1)
MARKING SMD 43t
43t SMD
smd 43t
a13g
smd 2au
smd marking 9T
smd diode marking JC
DIODE marking VU
49LC
AI 186 N
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2SC183
Abstract: 2SC183 P 2SC183 R japanese 2sc183 transistor manual
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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250nS
2SC183
2SC183 P
2SC183 R
japanese 2sc183 transistor manual
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44t transistor
Abstract: No abstract text available
Text: FS 15 R 06 KFS Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte V ces Maximum rated values 600 V 15 A lc Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 2,27 ~*thJC DC, pro Zweig / per arm
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2SB1516F5
Abstract: rohm 574 2SB1516 2SB1516(F5)
Text: h "7 > y T £ /Transistors 2 S B 1 5 1 6 2S B 1516F5 F 5 Epitaxial ixial Planar PNP Silicon Transistor fàWÏ tfàty%/L- 0\N Freq. Power Amp. • W fi'+üH I/D im ensions Unit : mm) V > > J V " , V 'J |T 1) VcE(sat) VcE(sat)——0-3V (lc /lB = -0.4A /-0 .0 4A )
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2SB1516F5
SC-63
001015b
2SB1516F5
rohm 574
2SB1516
2SB1516(F5)
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Untitled
Abstract: No abstract text available
Text: 2SJ275 2093 LD L o w D rive S eries 2090 V DSs = 1 0 0 V P Channel Power M OSFET '£4240 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. • Reduction in the num ber of m anufacturing processes for 2SJ275-applied equipm ent.
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2SJ275
2SJ275-applied
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LA7019
Abstract: 1054B
Text: NO.1054B SAfÈYO 7 L A F O 19 Monolithic Linear IC Electronic Switch for Use in VTR ^pjpli^cations I J I , F ea tu r es •Wide input dynam ic range * Low distortion ■Good frequency characteristic M axim um R a tin g s a tT a = 25°C M aximum Supply Voltage
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1054B
LA7019
1054B
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Untitled
Abstract: No abstract text available
Text: OSM SMA O-RIng Qaskat H«rm«tlo Sm I HtnrMUo oottdal RF oonnaotore using an elastomer gaskst to seal to the housing i n available In a wWe varlsty of configurations. This gastotlng mathod Is particularly useful In appfioatlons whara the oonnaotor may hava to
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Is/32
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D360SC6M
Abstract: L017
Text: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °
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D360SC6M
CJ533-1
D360SC6M
L017
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2SA682-Y
Abstract: 2SC1382 2SA682 2SA682-O AC46C 2SA682O transistor lt 186
Text: 2SA682 v ' J = l > P N P x f c ; ° # * v T J l ^ f ' ;7 > v : * * P C T ^ S SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) U nit in mm O M edium P o w e r A m p lifier A p p lic a tio n s O D riv e r S ta g e A m p lifier A p p lic a tio n s • r S iitE E 'C 'f" •
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2SA682
2SC1382Â
2SC1382
150mA
500mA
500mA,
500mA
-150mA
2SA682
2SA682â
2SA682-Y
2SA682-O
AC46C
2SA682O
transistor lt 186
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CATVs
Abstract: 80C186 80C188 yx 801 AML8
Text: • ♦ PRODUCT BRIEF Highly-Integrated, High-Performance 80C186 Upg r a d es AM D's Am 186EM and A m i 88EM microcontrollers are based on an 80C 186 core w ith enhanced performance and integrated peripherals— offering up to tw ice the performance of the 8 0C 186 without increasing
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80C186
Am186EM
Aml88EM
Aml86EM
CATVs
80C188
yx 801
AML8
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LM-035MGB
Abstract: SL-2284-20.22 SLA-5784 LM-035MGA DLG-4137 hp 5082 0180 lp 4137 SL-1341 SL-2129 LM53
Text: -9 0 * % s £ -f < T 'Jù fe tt g w n - r /- K Xy ;nm i LM-035DUB - D — A 0 .7 5x7 G a A sP 610 n M A N 28 - Gl 0.32 5x7 G a A sP 585 LM-035YYA - n — A 0 .7 5X 7 G a A sP 585 LM-035YYB - u.y 5x7 G aA sP 585 0.32 5x7 G aP 565 m M A N 24 Gl ¥ tfj f t Æ T« = 25‘Cj
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LM-035DUB
MAN28
LM-035YYA
LM-035YYB
MAN24
P2X14-2BÂ
MD0657M-R)
MD2057C-R)
MD2057C-RG)
SL-Q225
LM-035MGB
SL-2284-20.22
SLA-5784
LM-035MGA
DLG-4137
hp 5082 0180
lp 4137
SL-1341
SL-2129
LM53
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