brief
Abstract: M28F411
Text: M28F411 4 Mbit 512Kb x8, Boot Block Flash memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware
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Original
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PDF
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M28F411
512Kb
TSOP40
TheM28F411Flash
microproA18
M28F411
100ns
120ns
AI01134D
brief
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wp 39
Abstract: AN933 M28F211 M28F410 M28F411 M28W231
Text: AN933 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F2xx and M28F4xx families has been enhanced by the introduction of a Write Protect function using the WP pin.
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Original
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PDF
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AN933
M28F2xx
M28F4xx
T6-U20)
wp 39
AN933
M28F211
M28F410
M28F411
M28W231
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M28F411
Abstract: No abstract text available
Text: M28F411 4 Mb 512K x 8, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware
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Original
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PDF
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M28F411
TSOP40
M28F411
AI01134D
120ns
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M28F411
Abstract: No abstract text available
Text: M28F411 4 Mbit 512Kb x8, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware
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Original
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PDF
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M28F411
512Kb
TSOP40
TheM28F411Flash
M28F411
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Untitled
Abstract: No abstract text available
Text: F 5 M28F411 . 4 Mbit 512Kb x8, Boot Block Flash Memory • 5 V ± 10% SUPPLY VOLTAGE ■ ■ ■ ■ 12V ± 5% or ± 10% ROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS - Boot Block (Top location) with hardware
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OCR Scan
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PDF
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M28F411
512Kb
28F411
TSOP40
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