Untitled
Abstract: No abstract text available
Text: SGS-THOMSON D »iILi 'irM D E Ì M28F220 2 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS
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OCR Scan
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M28F220
x8/x16,
0020h
00E6h
TSOP48
M28F220
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PDF
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AN1004
Abstract: M28F220 M28F410 M28F411 M28F420 M28W431
Text: AN1004 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using
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Original
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AN1004
M28F220,
M28F420,
M28F411,
M28W431
T6-U20)
AN1004
M28F220
M28F410
M28F411
M28F420
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PDF
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M28F220
Abstract: AN1004 M28F410 M28F411 M28F420 M28W431
Text: AN1004 APPLICATION NOTE Write Protect Function for 2 Mbit and 4 Mbit Boot Block Flash Memories INTRODUCTION The performance of the 2 Mbit and 4 Mbit Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using
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Original
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AN1004
M28F220,
M28F420,
M28F411,
M28W431
T6-U20)
M28F220
AN1004
M28F410
M28F411
M28F420
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PDF
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wp 39
Abstract: AN933 M28F211 M28F410 M28F411 M28W231
Text: AN933 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F2xx and M28F4xx families has been enhanced by the introduction of a Write Protect function using the WP pin.
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Original
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AN933
M28F2xx
M28F4xx
T6-U20)
wp 39
AN933
M28F211
M28F410
M28F411
M28W231
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PDF
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28F220
Abstract: 3542J 3D IC
Text: 5 7 . S C S -T H O M S O N M28F210 M28F220 •LI 2 Megabit x8 or x16, Block Erase FLASH MEMORY PR ELIM IN A R Y DATA ■ DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or
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OCR Scan
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M28F210
M28F220
TSOP48
15/20m
28F220
3542J
3D IC
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PDF
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M28F220
Abstract: DQ0-DQ14
Text: M28F220 2 Mb x8/x16, Block Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware
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Original
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M28F220
x8/x16,
0020h
00E6h
TSOP48
M28F220
DQ0-DQ14
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PDF
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M28F220
Abstract: No abstract text available
Text: SGS-THOMSON M28F220 !H i !M [ !D 0 © § 2 Mb (x8/x16, Block Erase) FLASH M EM O RY • 5 V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS
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OCR Scan
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M28F220
x8/x16,
0020h
00E6h
M28F220
TSOP48
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PDF
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M28F210
Abstract: M28F220
Text: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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Original
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M28F210
M28F220
TSOP48
15/20mA
M28F210
M28F220
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PDF
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M28F210
Abstract: M28F220
Text: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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Original
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M28F210
M28F220
TSOP48
15/20mA
M28F210
M28F220
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PDF
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28F220
Abstract: aish
Text: M 28F210 M 28F220 S G S -1 H 0 M S 0 N 5 7 . EO glS(a i[Li re©li!!lD(gi 2 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA • DUAL x8 and x16 ORGANIZATION ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or
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OCR Scan
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28F210
28F220
TSOP48
or48K
15/20m
M28F210,
M28F220
28F220
aish
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PDF
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M28F220
Abstract: No abstract text available
Text: M28F220 2 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware
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Original
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M28F220
x8/x16,
0020h
00E6h
TSOP48
M28F220
DQ15A
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PDF
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N D »iILi 'irM D E Ì M28F220 2Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS
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OCR Scan
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M28F220
x8/x16,
0020h
00E6h
TSOP48
M28F220
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PDF
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M28F220
Abstract: No abstract text available
Text: M28F220 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware
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Original
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M28F220
256Kb
128Kb
0020h
00E6h
TSOP48
A0-A16
DQ8-DQ14
DQ15A
M28F220
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PDF
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M28F220
Abstract: No abstract text available
Text: M28F210 M28F220 2 Megabit x8 or x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter
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Original
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M28F210
M28F220
15/20mA
TSOP48
100ns
120ns
TSOP48
AI01798
M28F220
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PDF
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M28F220
Abstract: DQ15A-1
Text: M28F220 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware
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Original
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M28F220
256Kb
128Kb
0020h
00E6h
TSOP48
M28F220
AI01299B
DQ15A
DQ15A-1
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PDF
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