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Abstract: No abstract text available
Text: BASIC Stamp 2p24 GPS Airplane Datalogger Using the BS2p24’s ample RAM and EEPROM program space can store coordinates from an R/C airplane flight for further analysis by Ken Gracey and Jon Williams BASIC Stamp users often discuss how to access and log GPS data from a handheld unit. Some of the
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BS2p24â
BS2p24
kombat40
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2SK210
Abstract: No abstract text available
Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
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2SK210
2SK210
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2SK302
Abstract: No abstract text available
Text: 2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.035 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.)
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2SK302
O-236
2SK302
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2SK882
Abstract: No abstract text available
Text: 2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.025 pF typ. · Low noise figure: NF = 1.7dB (typ.) · High power gain: Gps = 28dB (typ.)
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2SK882
2SK882
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2SK210
Abstract: 2SK2104 2SK2105
Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
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2SK210
2SK210
2SK2104
2SK2105
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2sk241
Abstract: 2SK2416 24E1D
Text: 2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications • Low reverse transfer capacitance: Crss = 0.035 pF typ. · Low noise figure: NF = 1.7dB (typ.) · High power gain: GPS = 28dB (typ.) ·
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2SK241
2sk241
2SK2416
24E1D
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2SK241
Abstract: 2sk2416
Text: 2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications • Low reverse transfer capacitance: Crss = 0.035 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: GPS = 28dB (typ.)
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2SK241
2SK241
2sk2416
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2SK882
Abstract: No abstract text available
Text: 2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.025 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.)
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2SK882
2SK882
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2SK192A
Abstract: 2SK192A BL
Text: 2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
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2SK192A
2SK192A
2SK192A BL
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2SK192A
Abstract: No abstract text available
Text: 2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) · Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) · High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
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2SK192A
2SK192A
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2SK302
Abstract: No abstract text available
Text: 2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.035 pF typ. · Low noise figure: NF = 1.7dB (typ.) · High power gain: Gps = 28dB (typ.)
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2SK302
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Common PCN Handset Specification Phase 2 v4.2
Abstract: sim 300s gsm modem datasheet Common PCN Handset Specification v4.2 sim 300 GSM MODEM AT commands GSM0408 NITZ Siemens MC75 str 630 GSM 07.07 siemens 230 96
Text: Wireless EDGE Modems MultiModem EDGE with Bluetooth Interface MTCBA-E-B MultiModem EDGE with Ethernet Interface (MTCBA-E-EN) MultiModem EDGE with GPS Functionality (MTCBA-E-GP) MultiModem EDGE (MTCBA-E) MultiModem EDGE with USB (MTCBA-E-U)
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S000371B)
Common PCN Handset Specification Phase 2 v4.2
sim 300s gsm modem datasheet
Common PCN Handset Specification v4.2
sim 300 GSM MODEM AT commands
GSM0408
NITZ
Siemens MC75
str 630
GSM 07.07
siemens 230 96
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2SK210
Abstract: No abstract text available
Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
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2SK210
SC-59
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2SK302
Abstract: No abstract text available
Text: 2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.035 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.)
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2SK302
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2SK882
Abstract: No abstract text available
Text: 2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.025 pF typ. • Low noise figure: NF = 1.7dB (typ.) • High power gain: Gps = 28dB (typ.)
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2SK882
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HP203B/HP206C
Abstract: No abstract text available
Text: HP203B/HP206C What is the application of the new pressure sensor HP203B,HP206C? Weather forecast application Small size with SMD and the port just need two IO. Built-in compensation algorithm, application MCU does not need any calculation.
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HP203B/HP206C
HP203B
HP206C?
HP203B/HP206C
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fm transmitter project report
Abstract: uav design rc airplane transmitter receiver ac servo controller schematic elevator schematic schematic diagram of ip camera schematic diagram of ip camera sensor rc car car Speed Sensor project nios 2 processor images
Text: Aerial Photographic System Using an Unmanned Aerial Vehicle Second Prize Aerial Photographic System Using an Unmanned Aerial Vehicle Institution: Chungbuk National University Participants: Hyuk Joong Kwon, Woo Joong Kim, Jang Geun Kim, Sang Bae Park Instructor:
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honeywell egpws
Abstract: Honeywell Document 060-4267-000 0604267-000 Honeywell arinc MK VII EGPWS autopilot flight management system runway lights project airport radar memory stick
Text: MK V and MK VII Enhanced Ground Proximity Warning System EGPWS and Runway Awareness Advisory System (RAAS) Pilot Guide 060-4241-000 • Rev. E - December 2003 MK V & MK VII EGPWS Pilot Guide This document is an unpublished work Copyright 2003 Honeywell International Inc.
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105th
honeywell egpws
Honeywell Document 060-4267-000
0604267-000
Honeywell arinc
MK VII EGPWS
autopilot
flight management system
runway lights project
airport radar
memory stick
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skf control board
Abstract: No abstract text available
Text: HECTRONIC AB Hectronic main office in Uppsala, Sweden. Company presentation Hectronic AB, founded in 1989, is Sweden’s leading developer of Embedded PC’s. We offer innovative solutions and cost effective product development of IT based products to customers. We combine our own developed hardware
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skf control board
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2SK1771
Abstract: No abstract text available
Text: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. · Low noise figure: NF = 1.0dB typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SK881
Abstract: 2sk881gr
Text: 2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) Maximum Ratings (Ta = 25°C)
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2SK161
Abstract: 2SK161GR 2SK1615 TOSHIBA 2SK161 2SK161Y 2sk161 transistor 2SK1614 dsa0049037 transistor 2sk161
Text: 2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) •
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2SK161
2SK161
2SK161GR
2SK1615
TOSHIBA 2SK161
2SK161Y
2sk161 transistor
2SK1614
dsa0049037
transistor 2sk161
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3SK232
Abstract: No abstract text available
Text: 3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. · Low reverse transfer capacitance.: Crss = 20 fF typ. · Low noise figure.: NF = 1.5dB (typ.)
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3SK226
Abstract: toshiba cross
Text: 3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm • Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF typ.
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3SK226
3SK226
toshiba cross
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