Untitled
Abstract: No abstract text available
Text: POWER SPLITTERS/COMBINERS 50 & 75Ω 2 WAY-0° 4 kHz to 2 GHz PSC MSC FREQ. RANGE MHz MODEL NO. ISOLATION dB INSERTION LOSS, dB Above 3dB fL-fU L Typ. Min. MJ Typ. Min. U Typ. Min. MSC-2-1 MSC-2-1W MSC-2-5 MSC-2-11 0.1-450 2-650 5-1500 5-2000 20 15 22 18 18 16
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MSC-2-11
PSC-2-11
PSC-2-45
PSC-2-1000
MIL-P-23971/15*
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mcl psc-2-1
Abstract: PSC-2-1W-75
Text: POWER SPLITTERS/COMBINERS 50 & 75Ω Plug-In 2 WAY-0° 4 kHz to 2.5 GHz LPS MSC PSC ISOLATION dB INSERTION LOSS, dB Above 3dB Typ. Max. Typ. Max. Max. Max. Max. Max. Max. Max. Page Note B 0.5 0.4 0.6 0.5 1.1 2.0 3.0 4.0 0.15 0.2 0.3 2-84 BB48 an 17.95 20 18
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LPS-109
MSC-2-11
PSC-2-11
PSC-2-45
PSC-2-1000
PSC-2-1-75
PSC-2-1-75A*
PSC-2-1V-75
PSC-2-1W-75*
5-1500U/2]
mcl psc-2-1
PSC-2-1W-75
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mcl psc-2-1
Abstract: mcl Tsc-2-1
Text: POWER SPLITTERS/COMBINERS 50 & 75Ω Plug-In 2 WAY-0° 4 kHz to 2.5 GHz LPS FREQ. RANGE MHz MSC PSC ISOLATION dB INSERTION LOSS, dB Above 3dB Typ. Max. Typ. Max. Max. Max. Max. Max. Max. Max. Page Note B 0.4 1.1 2.0 3.0 4.0 0.15 0.2 0.3 2-84 BB48 an 17.95
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LPS-109
MSC-2-11
PSC-2-11
PSC-2-45
PSC-2-1000
PSC-2-1-75
PSC-2-1-75A*
PSC-2-1V-75
PSC-2-1W-75*
5-1500U/2]
mcl psc-2-1
mcl Tsc-2-1
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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Untitled
Abstract: No abstract text available
Text: FTR-K1 SERIES POWER RELAY 1 POLE - 16A 80A Inrush type FTR-K1 Series n FEATURES Peak 80A inrush current 1 form A type Low profile (height: 15.7mm) l High insulation Insulation distance (between coil and contacts): 10mm min. Dielectric strength: 5KV Surge strength: 10KV
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400mW)
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Untitled
Abstract: No abstract text available
Text: Advanced Power TOPLED Plus Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LD G5AP, LT G5AP Released Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, klarer Silikon - Verguss, klare Silikonlinse • Besonderheit des Bauteils: mehr Licht durch
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D-93055
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LTG5AP
Abstract: No abstract text available
Text: Advanced Power TOPLED Plus Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LD G5AP, LT G5AP Released Besondere Merkmale • Gehäusetyp: weißes P-LCC-4 Gehäuse, klarer Silikon - Verguss, klare Silikonlinse • Besonderheit des Bauteils: mehr Licht durch
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Untitled
Abstract: No abstract text available
Text: AFBR-83CDZ 12 Channel x 12.5 Gbps Transceiver CXP Pluggable, Parallel Fiber-Optics Module Data Sheet Description Features The Avago Technologies AFBR-83CDZ is a Twelve-Channel, Pluggable, Parallel, Fiber-Optic CXP Transceiver for 12 × 12.5G proprietary application. This transceiver is a
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AFBR-83CDZ
AFBR-83CDZ
84-contact
AV02-3753EN
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TSP160C
Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Text: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04
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50Amp
80Amp
100Amp
375x360x390/390x240x420
375x360x390
O-252
TSP160C
ER1602CT
727 thyristor
uf1002ct
PANJIT ER306
1N4004 SOD-123
272 zk thyristor
mw 137 600g
pg2010
D804C
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rs tube
Abstract: AK 3060 ScansU9X22
Text: rm orpoH R e ctify in g d isc h a rg e tube G a sg e fü llte G le ich rich te rrö h re UA025A - nPHM EHEHHE JIaMna TECJIA UA025A »BjiaeTcs ra 30ra 30Tp0H0M c o ä h k m aHoaoM, HanoJiHeHHBiM aproHOM h paSoTaioinHM B ÄHana30He TeMnepaTypu OKpy*aK meä cpeaH o t + 7 0
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UA025A
30Tp0H0M
Hana30He
UA025A,
DCG4-1000
UA025A
rs tube
AK 3060
ScansU9X22
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UA025A
Abstract: DCG4-1000 LA 4100 bkjl DCG611000
Text: rm orpoH R e ctify in g d isc h a rg e tube G a sg e fü llte G le ich rich te rrö h re UA025A - nPHM EHEHHE JIaMna TECJIA UA025A »BjiaeTcs ra 30ra 30Tp0H0M c o ä h k m aHoaoM, HanoJiHeHHBiM aproHOM h paSoTaioinHM B ÄHana30He TeMnepaTypu OKpy*aK meä cpeaH o t + 7 0
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UA025A
ra30-ra30Tp0H0M
anana30He
UA025A
ra30Tp0Hbl
UA025A,
DCG4-1000
DCG611000
DCG4-1000
LA 4100
bkjl
DCG611000
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215730
Abstract: No abstract text available
Text: Index by P a rt N u m b e r Index Part* Type pg Part# Type 01.0001 B2N 215 02.0014 BL30N 216 050204 SP10AR-N/35 223, 257 08.0111 Mu 0.8d/M20 312 01.0002 B3N 215 02.0015 BL35N 216 050205 SP10AR-N/50 223,257 08.0112 Mu 0.8d/M24x2 312 01.0003 B4N 215 BL40N 216
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BL30N
SP10AR-N/35
8d/M20
BL35N
SP10AR-N/50
8d/M24x2
BL40N
SP14AR-N/50
BL45N
SP14AR-N/70
215730
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rgn 1064
Abstract: vergleichsliste mo465 telefunken hr 660 tungsram Ubf 11 TK4100 RGN2004 Telefunken g-2504 Telefunken ebf 11
Text: ' RÖHRENDATEN für Schule u, Werkstatt y ^ 1. VergleichstabeSIe F 2, Austauschliste Ausgabe 1928— 1945 . ' *en W ü n schen v ie le r Interessenten, en tsp rech en d , bringen w ir mit n ach fo lg e n d e r A ufstellung eine Vergleichsliste d e r e u ro p äisch en Röhren so w ie eine Austaüschrtste* die
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RGN2004
Abstract: rgn 1064 rgn 4004 RGN1054 DN904 s41 604 lf RGN354 TL 413 RGN1404 L416D
Text: Type A4 A A 4 AM H e rste lle r GleicheType C a stilla C a stilla RENS 1274 RENS 1284 RENS 1294 AF 2 AF 3 AF 7 RENS 1244 C astilla C o stilla C a stilla C a s tilla C a stilla C a stilla C a stilla C a stilla C a s tilla A 4 DD A 4 DP 1 C a stilla C a stilla
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DCG4-1000
Abstract: DCG611000 DCG4/1000G
Text: ra3orpoH R e ctify in g d isch a rg e tube G a sg efä llte G le ich rich te rrö h re DCG4-1000 - — nPHMEHEHHE JlaMna TECJIA D CG4/1000 HBjiseTcs ra30Tp0H0M c oähhm aHO«OM, KOTopbiH npeaH a3H aqeH s jix n pH M eH enna b H C TO qH H K ax n H T a H H H juin. m o iij h b ix y c H J iH T e jie H h n e p e Ä a T ^ z K O B c p e ^ H e á m o h # io c t h .
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DCG4/1000
ra-30tp0h0m
ra30Tp0Hbl
UA025A,
DCG4-1000
UA025A
DCG611000
DCG4-1000
DCG611000
DCG4/1000G
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CNY30
Abstract: SCR TRIAC 635 IS606 IS620 MOC3030 moc304 MOC3031 MOC3032 MOC3033 MOC3040
Text: IS O C O M C O M P O N E N T S Zero Crossing Triac Couplers Single Channel, 6 Pin DIP Part Number Features Input Trigger Current VTM - 3V Max mA M O C 3030 30 M OC3031 15 M O C 3032 10 M O C 3033 M O C 3040 M OC3041 M O C 3042 M O C 3043 Isolation Test Voltage
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MOC3030
MOC3031
MOC3032
MOC3033
MOC3040
MOC3041
MOC3042
MOC3043
MOC3060
MOC3061
CNY30
SCR TRIAC 635
IS606
IS620
MOC3030
moc304
MOC3031
MOC3032
MOC3040
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Lautsprecher LP
Abstract: L3060PB reich L2459 ddr lautsprecher L2155PB gut 2160 Scans-048 KAN SC 3000 DSAGER00027
Text: A us dem Lautsprechersortim ent d er DDR L a u tsp re c h e r w erd e n in e in e r g ro ß e n Ty p e n a n z a h l g e fe rtig t. D ie T a b e lle zeig t e in e A u sw a h l. Sie b e g in n t mit dem Kleinstlautsprecher 121 K. S e in e O b e rtra g u n g sku rve ist g a n z sp eziell a u f d ie V e r
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TS 4142
Abstract: 18Oi KSC2517 KSC2518
Text: SAMSUNG SEMICONDUCTOR INC KSC2517 14E D 7 ‘ì t m 4 E GDD7SSÖ 1 | NPN EXITAXIAL SILICON TRANSISTOR r - 3 s ~ o f HIGH S P E E D SWITCHING' T0*220 INDUSTRIAL USE A B S O L U T E MAXIMUM RATINGS (Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage
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KSC2517
T0220
KSC2518
TS 4142
18Oi
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k30a
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR M BR F3035CT - M B R F3G150CT Isolated 30.0 AMPS. Schottky Barrier Rectifiers RoHS IT0-220AB CO M PLIANCE Features <r <• <• -v<• -v-v-v- UT.Z.lìi .il ¿¿»•.vu/ U9edcanrie9 P la 9 lio m a te r ia l U n c e iw r it e r s L a b o r a to r y
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F3035CT
F3G150CT
IT0-220AB
k30a
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40841 dual gate mosfet
Abstract: AN6818 40841 AN6668 3N153 CA3060 operational transconductance amplifier Harris CA3086 mosfet HF amplifier CA3060E
Text: CA3060 110kHz, Operational Transconductance Amplifier Array Description The CA3060 m onolithic integrated circuit consists of an array of three independent O perational Transconductance Am plifiers see Note . This type of am plifier has the generic characteris
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CA3060
110kHz,
100mW
CA3060
40841 dual gate mosfet
AN6818
40841
AN6668
3N153
operational transconductance amplifier
Harris CA3086
mosfet HF amplifier
CA3060E
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TFK U 3212 M
Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Text: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro electro n ic G m bH K ruppstrasse 6
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THYRISTOR ts 602
Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
Text: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .
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BYX30
T-03-Ã
711DfiSh
0041b04
BS9333-F002
BYX30-200
BYX30-600
BYX30-200R
BYX30-600R.
Non-repetiti10^
THYRISTOR ts 602
BYX31
BYX30-600R
INVERTER 50 kW
BYX30-600
IEC134
DM51
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str f 6456
Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Text: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH
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09-Dec-96
str f 6456
str x 6456
SM 5126 BP
STR F 6168
str 6668
STR G 6352
STR 6456
str f 6468
321 CJ 7121
AXP 209 IC
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