Semicon volume 1
Abstract: AWM 2851 VW-1 AWM 2835 cable
Text: Industrial Cable S ERV IN G IN DU STR I AL , SP ECI ALT Y AN D COMMERCI AL AP P LI CATI O N S APRIL 2015 What’s New? Industrial Serving Industrial, Specialty and Commercial Applications GENFREE II LOW-SMOKE, ZERO-HALOGEN CABLE S This catalog contains indepth information on the
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INS-0043-R0415
Semicon volume 1
AWM 2851 VW-1
AWM 2835 cable
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Abstract: No abstract text available
Text: QSS-XXX-XX-XXX-D-XXX REVISION AL DO NOT SCALE FROM THIS PRINT C1 02 *SEE NOTES 10 & 11 LEAD STYLE -01: .1430[3.632] No OF POSITIONS / 25 x .7875[20.003]) + .0500[1.270] REF .7875 20.003 .0060 0.152 REF .2450 6.223 REF .2850 7.239 REF 01 .0275 0.699 REF
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QSS-075-01-XXX-D-LC
QSS-25-01-D-XX
C-126-21-XXX
QSS-25-XX-D-XX-A)
LC-08-TM-01)
635mm
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CD 5888
Abstract: hartwell MD 202 American Semiconductor 13765 C 6090 data 8873 MD 1531 Pioneer sa 520 ROCHESTER ELECTRONICS
Text: North America Distributors Alabama All American Semiconductor 4950 Corporate Drive Suite 115D Huntsville, AL 35805 205 837-1555 (800) 382-5303 Fax: (205) 837-7733 Arizona (Cont.) Pioneer-Standard Electronics, Inc. 4908 E. McDowell Road Suite 103 Phoenix, AZ 85008
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CD 5888
hartwell
MD 202
American Semiconductor
13765
C 6090
data 8873
MD 1531
Pioneer sa 520
ROCHESTER ELECTRONICS
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Abstract: No abstract text available
Text: LAST TIME BUY: AUGUST 31, 2014. CLICK HERE FOR OBSOLESCENCE NOTICE OF FEBRUARY 2014. Single Output LSN-W3 Models www.murata-ps.com Non-Isolated, 3-5.5VIN, 0.75-3.3VOUT 16 Amp DC/DC Converters NOT RECOMMENDED FOR NEW DESIGNS Typical Typica al unit FEATURES
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Cannon
Abstract: No abstract text available
Text: 8790ITTCCMSmrtCrdCnctr2KUS4.qxd 11/29/99 8:33 AM Page 35 North American Sales Representatives ALABAMA Brandel-Stephens 4801 University Square Suite 13 Huntsville, AL 35816 Tel: 256 837-3500 Fax: (256) 837-3598 ARIZONA Shefler-Kahn 21639 N. 12th Ave., Ste. 105
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8790ITTCCMSmrtCrdCnctr2KUS4
Cannon
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Abstract: No abstract text available
Text: North American Sales Representatives ALABAMA Brandel-Stephens 4801 University Square Suite 13 Huntsville, AL 35816 Tel: 256 837-3500 Fax: (256) 837-3598 ARIZONA Shefler-Kahn 21639 N. 12th Ave., Ste. 105 Phoenix, AZ 85027 Tel: (623) 5 81-0884 Fax: (623) 581-3522
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Text: PRELIMINARY EPOXY COATED INDUCTORS AL SERIES r Widest selection in the industry! SPECIFICATIONS r AL05 delivery from stock E12 values 0.1 Temperature Range -55°C to +125°C to 1000µH 10% Insulation Resistance 1000 MΩ Min. r Premium grade materials enable increased
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500ppm/
AL02s
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BAR90-02LRH
Abstract: relay finder 60.13 BAR90 MARKING 54 "Pin Diode" ANT-2450
Text: BAR9 0-0 2 LRH PI N Diod e Switch us ing BAR9 0 fo r 2.4 - 2. 5 GHz W LAN/Wi M AX Applic atio ns Technic al Rep ort T R 137 Revision: Version 1.0 Date: 29.07.2009 RF and Protecti on Devi c es Edition 29.07.2009 Published by Infineon Technologies AG 81726 Munich, Germany
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TR137
BAR90
BAR90-02LRH
relay finder 60.13
MARKING 54 "Pin Diode"
ANT-2450
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Untitled
Abstract: No abstract text available
Text: MENTOR Reflektoren und Abdeckkappen Werkstoffe Reflectors and Caps Materials Reflektoren Reflectors PES; AL-metallisiert / PC; AL-metallized Adapter Adapter Polycarbonat schwarz/black Fassung Lamp-holder Polycarbonat schwarz/black Kontakte Contacts Federbronze galv. verzinnt / Spring bronze, tinned
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LX245
Abstract: LX2450 SSB-LX2450AW
Text: UNCONTROLLED DOCUMENT REV, A [ 0,7 8 9 ] 20.04 6,10 [ 0.240] REV. S S B -LX 2450A W A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #10BRDR. & ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 S X L i [0,191] PARAMETER MIN PEAK WAVELENGTH 3,81 [0,150] REVERSE VOLTAGE
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SSB-LX2450AW
605nm
LX245
LX2450
SSB-LX2450AW
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Abstract: No abstract text available
Text: IR_ VISHAY Vishay Dale ▼ Inductors Epoxy C onform al Coated U niform Roll C oated FEATURES • • • • • • ^ H P - Flame-retardant coating. Color band identification. Excellent environmental characteristics.
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MIL-STD-202,
02-Nov-01
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LX245
Abstract: SSB-LX2450YW
Text: UNCONTROLLED DOCUMENT REV, A B 20.04 [0 ,7 8 9 ] PART NUMBER REV. S S B -LX 2450Y W B E.C.N. NUMBER AND REVISION COMMENTS 19.05 [0,750] E.C.N. #10BRDR. & REDRAWN. ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 S X i 4 ,86 [0,191] 3,81 [0,150] f f 7.26 .96 6.21.01
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SSB-LX2450YW
10BRDR.
LX245
SSB-LX2450YW
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Untitled
Abstract: No abstract text available
Text: EPOXY COATED INDUCTORS -£ & - O B* AL SERIES '"•n 1- H S P E C IF IC A T IO N S ■ Widest selection in the industry! ■ AL05 delivery from stock refer to p. 4 ■ Premium grade materials enable
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AL02s
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Untitled
Abstract: No abstract text available
Text: _ _ _ _ _ _ EPOXY COATED INDUCTORS New Sub-Mini Size AL02 \ -» AL SERIES -L -l SPECIFICATIONS • W id e s t selectio n in th e industry! ■ AL05 delivery from stock refer to p. 4 ■ Premium grade materials enable increased current, SRF, Q, and
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SG 5010
Abstract: 10sg15
Text: O SC O N , Al Solid Capacitors with Organic Sem iconductive Electrolyte SG For audio Series • This is optimum for digital audio and Hi-Fi V C R . • Since OS-CON has solid electrolyte and resin-sealed structure, it doesn't expose the phenomenon of element vibration.
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120Hz
10KHz
100KHZ
16SG22M
16SG33M
10SG15M
10SG22M
10SG33M
6SG22M
6SG33M
SG 5010
10sg15
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Untitled
Abstract: No abstract text available
Text: <900 New Sub-Mini Size AL02 \ EPOXY COATED INDUCTORS AL SERIES -L H SPECIFICATIONS W id est selectio n in th e industry! AL05 delivery from stock refer to p. 4 Premium grade materials enable increased current, SRF, Q, and temperature ratings Low cost due to automated production
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T8030D
Abstract: No abstract text available
Text: HT8030X PCM Voice Synthesizer HOLTEK Features • • • O perating voltage: 2.4V~5V Direct drive output tran sisto r Low stand-by current l|iA typ. M inim al external com ponents 3Hz flash for F L A G output Applications • • Toys A lert & W arning system
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HT8030X
T8030X
8030X
HT8030X
100-300Q
T8030D
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Untitled
Abstract: No abstract text available
Text: A COMPANY OF MODEL IR Inductors E p o x y C o n form al C o a te d U niform Roll C o a te d FEATURES • Flame-retardant coating • Color band identification • Excellent environmental characteristics • Uniform coating is excellent for automatic insertion
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MIL-STD-202,
Resistan300
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PCN076
Abstract: No abstract text available
Text: Fast Recovery Diodes ~ Stud & flat base types Type V RRM Range I f AV ^ ^CASE M ax- (atTcJ ^ ( rms) I FMax. ( a iT cJ Typica I Reverse Recovered Charge ^FSMfl) and Typit;al Reverse Recovery g Tj Max. 1 0m s (50% Chord) V^ 60% 100°C ^RRM (Note 3) Qra trr
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1N3899-03
110CC)
1N3909-13
SMXPCN046
SMXPCN070-1
PC/HN134
PC/HN144
PHN170
PHN174
100A281
PCN076
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zener 1N4 diode
Abstract: diode zener 345 1N2828B ZENER 1N4
Text: Microsemi Corp. / The“ expen$ j/ SANTA ANA, CA SCOTTSDALE. Al SCOTTSDALE, AZ / 1N 2804 thru 1N2846B and 1 N 4557B thru 1N4564B For more information call: 602 94I-6300 FEATURES SILICON 50 WATT ZENER DIODES • ZENER VOLTAGE 3.9V to 200V • AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 %
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94I-6300
1N2846B
4557B
1N4564B
10rease
zener 1N4 diode
diode zener 345
1N2828B
ZENER 1N4
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Untitled
Abstract: No abstract text available
Text: Fast Recovery D iodes ~ Capsule types Type ^F AV Range T ns55°C ^F(RMS) Ths 25°C IF Ths 25°C Typica I Reverse Recovered Charge and Typi :al Reverse Recovery W Tj Max. (50% Chord) I fSM(1) 10ms V r< 6 0 % ^RRM (Note 3) 10 Qra trr ^FM di/dt SMxCXClOO (V)
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SMxCXC144
SMxCXC170
1N3899
1N3900
1N3901
1N3902
1N3903
1N3909
1N3910
1N3911
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Untitled
Abstract: No abstract text available
Text: DATA SHEET .NFosAMTioM , STO RA G E IS D 1 0 0 0 A S e r i e s Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations d e v ic e s G ENER AL DESC R IPTIO N FEATURES Information Storage Devices' ISD1000A ChipCorder Series provides high-quality, single-chip record/playback
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20-Second
ISD1000A
ISD1000
4C379
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CXC220
Abstract: 100A249 cxc224 CXC968 CXC574 cxc915
Text: F ast R ecovery D io d es ~ C apsule types Type ^RRM Range ^F AV T hs hS 5 5 ° C ^FI RMS) T hs 25°C Ths25°C Typica Reverse P ecovered Charge ^FSM [1) and Typic al Reverse Recovery i i Tj Max. 10ms (50% }hord) V r= s 60% V RRM Qra (Note 3) SMxCXClOO (V)
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SMxCXC134
SMxCXC144
SMxCXC170
SMxCXC174
SMxCXC176
SMxCXC190
SMxHXC084
SMxHXC103
SMxHXC164
CXC220
100A249
cxc224
CXC968
CXC574
cxc915
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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