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    AL22V10 Search Results

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    AL22V10 Price and Stock

    Rochester Electronics LLC AMPAL22V10JC

    PLD
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    DigiKey AMPAL22V10JC Bulk 46
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    Rochester Electronics LLC PAL22V10-7PC

    OT PLD, 7.5NS, PAL-TYPE, TTL, PD
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    DigiKey PAL22V10-7PC Bulk 12
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    Rochester Electronics LLC PAL22V10-15DC

    VANTIS PLD
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    DigiKey PAL22V10-15DC Bulk 27
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    Rochester Electronics LLC PAL22V10-10JC

    OT PLD, 10NS, PAL-TYPE, TTL, PQC
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    DigiKey PAL22V10-10JC Bulk 30
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    Lattice Semiconductor Corporation GAL22V10D-5LJN

    IC PLD 10MC 5NS 28PLCC
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    Bristol Electronics GAL22V10D-5LJN 125
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    AL22V10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    22v10 gal

    Abstract: GAL22V10G
    Text: Lattice Semiconductor AL22V10 Family G A L I S V IO G AL22V10 Corporation FE A TU R E S • HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS III Advanced CMOS Technology


    OCR Scan     		GAL22V10 AL22V10 AL26C 22V10 100ns 22v10 gal GAL22V10G PDF

    L22V10

    Abstract: AL22V10
    Text: Lattice FEATURES G AL22V10/883 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax =166 MHz — 7ns Maximum from Clock Input to Data Output — TTL Compatible 12 mA Outputs


    OCR Scan     		22V10 100ms) Testability28-Pin 24-Pin 28-Pin L22V10 AL22V10 PDF

    18v10

    Abstract: GAL 18v10 programming Guide
    Text: Lattice Semiconductor Corporation G A L 2 2 V 1 0 F a m ily G AL18V10 G AL22V10 G AL26C V12 ” FEATURES • HIGH PERFORMANCE E ^M O S* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS* 111Advanced CMOS Technology


    OCR Scan     		AL18V10 AL22V10 AL26C 11Advanced 22V10 18v10 GAL 18v10 programming Guide PDF

    RT6105

    Abstract: LATTICE plsi architecture 3000 SERIES speed isp synario LATTICE plsi architecture 3000 SERIES GAL22V10B use circuit isplsi device layout
    Text: Lattice G AL22V10/883 High Performance E2CMOS PLD Generic Array Logic , ! Semiconductor i •Corporation F U N C T IO N A L B L O C K D IA G R A M FEA TU RES • HIGH PERFORMANCE E!CMOS TECHNOLOG Y — 10 ns Maxim um Propagation Delay — Fmax = 1 6 6 MHz


    OCR Scan     		AL22V10/883 22V10 1-800-LATTICE pDS2102M-PC1 pDS2102M-SN1 102M-PC2 pDS1102M-SN1 pDS3302M-PC2 pDS1120M-PC1 RT6105 LATTICE plsi architecture 3000 SERIES speed isp synario LATTICE plsi architecture 3000 SERIES GAL22V10B use circuit isplsi device layout PDF

    gal22v10b-15

    Abstract: No abstract text available
    Text: LATTICE SEMICONDUCTOR bflE D 5 3 8 ^ 4 ^ 00026*11 214 « L A T Lattice G A L 2 2 V 1 High Performance E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 200 MHz


    OCR Scan     		22V10 GAL22V10 GAL22V10B-15/-25Q: gal22v10b-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: GAL22V1 OB/883 AL22V10/883 Lattice High Performance E2CMOS PLD FUN CT IO N A L BLO C K DIAGRAM FEATURES • HIGH PERFORMANCE E^CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 8ns Maximum from Clock Input to Data Output — TTL Compatible 12 mA Outputs


    OCR Scan     		GAL22V1 OB/883 GAL22V10/883 22V10 100ms) 962-89841023A 24-Pin GAL22V10-25LD/883 5962-8984104LA PDF

    Untitled

    Abstract: No abstract text available
    Text: AL22V10 Lattice High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FEATURES FUNCTIONAL BLOCK DIAGRAM HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.5 ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL22V10 22V10 Tested/100% GAL22V1 OB-15/-25Q: PDF

    Untitled

    Abstract: No abstract text available
    Text: LAT T IC E S E M I C O N D U C T O R bfiE D Lattice 0 D D 3 G2 4 E4T AL22V10/883 High Performance E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz


    OCR Scan     		GAL22V10/883 22V10 28-Pin AL22V10B-15LR/883 962-89841033A 24-Pin AL22V10B-20LD/883 5962-8984102LA PDF

    GAL22V10B

    Abstract: GAL22V10 GAL22V10B-7LP GAL22V10C GAL22V10C-7LJ GAL22V10C-7LP GAL22V10B-15LJ GAL22V10C-10LP lattice 22v10 al22v10
    Text: AL22V10 Lattice High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 200 MHz — 4 ns Maximum from Clock Input to Data Output — UitraMOS® Advanced CMOS Technology


    OCR Scan     		GAL22V10 22V10 100ms) GAL22V10B-15/-25Q: GAL22V10B GAL22V10B-7LP GAL22V10C GAL22V10C-7LJ GAL22V10C-7LP GAL22V10B-15LJ GAL22V10C-10LP lattice 22v10 al22v10 PDF

    GAL22V10B

    Abstract: No abstract text available
    Text: AL22V10B AL22V10 : : : :| L ad t l tl li UP CO •■■■■■ High Performance E2CMOS PLD F U N C T IO N A L B L O C K D IA G R A M FE A T U R E S • HIGH PERFORMANCE E2CMOS* TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5 ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL22V10B GAL22V10 22V10 100ms) GAL22V10 PDF

    GAL22V10-25LP

    Abstract: GAL22V10-15LP GAL22V10-20LP gal22v10b15lpi GAL22V10-25LPI lattice 22v10 programming specification GAL22V10-20LPI GAL22V10B15LP GAL22V10B-15U GAL22V10-15L
    Text: AL22V10B AL22V10 t i PC O :L d I IIÜ •■■■■■ FEATURES High Performance E2CMOS PLD F U N C T IO N A L B L O C K D IA G R A M • HIGH PERFORMANCE E’ CMOS» TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 105 MHz — 7 ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL22V10B GAL22V10 22V10 100ms) 24-Pin 28-Lead GAL22V10B-15LPI GAL22V10-25LP GAL22V10-15LP GAL22V10-20LP gal22v10b15lpi GAL22V10-25LPI lattice 22v10 programming specification GAL22V10-20LPI GAL22V10B15LP GAL22V10B-15U GAL22V10-15L PDF

    Untitled

    Abstract: No abstract text available
    Text: LATTICE SEMICONDUCTOR böE » • SBÔb'îM'J □DDS'îlO TTb « L A T AL22V10 Lattice In-System Program m able E2C M O S PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • IN-SYSTEM PROGRAMMABLE 5-VONLY — 4-Wire Serial Programming Interface


    OCR Scan     		ispGAL22V10 22V10 PDF

    GAL22V10-20LP

    Abstract: GAL22V10-15LP gal22v10-15
    Text: Lattice Semiconductor G A L 22 V 1 0B AL22V10 Corporation High Performance E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES •HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 105 MHz — 7 ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL22V10 22V10 GAL22V10-20LP GAL22V10-15LP gal22v10-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice G A L 2 2 L V 1 0 Low Voltage E2CMOS PLD Generic Array Logic I Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maxim um Propagation Delay — Fmax = 250 MHz — 3 ns Maxim um from Clock Input to Data O utput


    OCR Scan     		22V10 GAL22LV10C) GAL22LV10D) DDD5001 GAL22LV10 GAL22LV1 PDF

    Untitled

    Abstract: No abstract text available
    Text: AL22V10/883 Lattice High Performance E2CMOS PLD Generic Array Logic ; Semiconductor I Corporation Functional Block Diagram Features • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 1 6 6 MHz — 7ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL22V10/883 22V10 Tested/100% 100ms) L22V10/883 GAL22V10 MIL-STD-883 GAL22V10D-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: ispGAL22V 10 ; •; ; ; ; Semiconductor . . Z ï . ï Corporation I In-System Programmable EzCMOS PLD _ Generic Array Logic e atu re s F u n c tio n a l B lo c k Oiagra? • IN-SYSTEM PROGRAMMABLE™ 5-V ONLY — 4-Wire Serial Programming Interface


    OCR Scan     		ispGAL22V ispGAL22V10C 22V10 ispGAL22V10 PDF

    SR 13003

    Abstract: SI 13003 13003 PAL22V10-12 PAL22V10 X 13003 13003 h pal 005a pal 007a PC 13003
    Text: COM’L : -7/10/15 MIL: -12/20 AL22V10 Family, AL22V10/A Advanced Micro Devices 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz Im a x ■ 10 macrocells programmable as registered or combinatorial, and active high or active low to


    OCR Scan     		PAL22V10 AmPAL22V10/A 24-Pin 24-pln 28-pln 3003-022A SR 13003 SI 13003 13003 PAL22V10-12 X 13003 13003 h pal 005a pal 007a PC 13003 PDF

    icc 312

    Abstract: No abstract text available
    Text: AL22V10B/883C AL22V10/883C Lattice Semiconductor Corporation High Performance EzCMOS PLD FE A TU R E S F U N C T IO N A L B LO C K D IA G R A M •HIGH PERFORMANCE EJCMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 62.5 MHz — 8ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL22V10B/883C GAL22V10/883C 22V10 100ms) 28-Pin 24-Pin icc 312 PDF

    gal22v10b

    Abstract: GAL22V10B-25LD
    Text: Lattice AL22V10 /8 8 3 High Performance E2CMOS PLD Generic Array Logic FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORM ANCE E2CMOS TECHNOLOG Y — 15 ns Maxim um Propagation Delay — Fm ax = 62.5 MHz — 8ns Maxim um from C lock Input to Data Output


    OCR Scan     		22V10 24-Pin MIL-STD-883 GAL22V10B-15LD/883 GAL22V10B-15LR/883 GAL22V10B-20LD/883 GAL22V10B-20LR/883 GAL22V10B-25LD/883 GAL22V10B-30LD/883 gal22v10b GAL22V10B-25LD PDF

    QAL22V10-30L

    Abstract: PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL22V10 GAL Gate Array Logic
    Text: AL22V10 NATL SEMICOND LS0112b b3E D MEMORY DGb7b45 «NSCB National mm Semiconductor AL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per­ formance CMOS process with electrically erasable floating


    OCR Scan     		bS0112b D0b7b45 GAL22V10, 24-pin GAL22V10 tl/l/10406-19 tl/l/10406-20 TL/L/10406-21 QAL22V10-30L PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL Gate Array Logic PDF

    22CV10AP

    Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610
    Text: Data Book General Information PEEL Arrays PEEL Devices Special Products and Services Development Tools Application Notes and Reports Package Information PLACE Users Manual_ Introduction to PLACE PLACE Installation Getting Started with PLACE Operation Reference Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattica AL22V10/883 High Performance E2CMOS PLD Generic Array Logic I ; ; ; Semiconductor I •■■ Corporation Functional Block Diagram Features • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax =166 MHz — 7ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL22V10/883 22V10 Tested/100% 100ms) GAL22V10C-15LR/883 962-89841033A 24-Pin GAL22V10C-20LD/883 5962-8984102LA PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice AL22V10 High Performance E2CMOS PLD Generic Array Logic ; Semiconductor i Corporation Functional Block Diagram Features HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.5 ns Maximum from Clock Input to Data Output


    OCR Scan     		GAL22V10 22V10 Tested/100% GAL22V10B-15/-25Q: PDF

    RAL22V10

    Abstract: PALCE22V100-25 pal22v10
    Text: COM’L MIL Cl AL22V10-10/15 AmPAL22Vl 0/A PALCE22V10H-15/25/Q-25 Advanced Micro Devices 24-pln TTUCMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 10 ns propagation delay and 71 MHz fM AX ■ Low-power EE CMOS versions ■ 10 m acrocells program m able as registered o r


    OCR Scan     		PAL22V10-10/15 AmPAL22Vl PALCE22V10H-15/25/Q-25 24-pln 24-pin 28-pin PAL22V10 RAL22V10 PALCE22V100-25 pal22v10 PDF