AP640R7-00
Abstract: high power SPDT
Text: 24–35 GHz GaAs MMIC High Power SPDT Reflective PIN Switch AP640R7-00 0.113 • Broad Bandwidth ■ Low Loss, < 1.5 dB 2.078 Chip Outline Features 1.100 ■ High Isolation, > 28 dB 0.988 ■ Return Loss, < -12 dB ■ Fast Switching Speed, < 4 ns 0.398 Alpha’s high power, single pole, double throw PIN diode
|
Original
|
AP640R7-00
12/02A
AP640R7-00
high power SPDT
|
PDF
|
HMC849LP4C
Abstract: HMC849LP4CE hmc849
Text: HMC849LP4CE v02.0410 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless
|
Original
|
HMC849LP4CE
HMC849LP4CE
HMC849LP4C
hmc849
|
PDF
|
HMC849LP4CE
Abstract: hmc849
Text: HMC849LP4CE v01.1009 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless
|
Original
|
HMC849LP4CE
HMC849LP4CE
hmc849
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC849LP4CE v03.0311 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features the hMc849LP4ce is ideal for: high isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless
|
Original
|
HMC849LP4CE
HMC849LP4CE
|
PDF
|
HMC849LP4CE
Abstract: No abstract text available
Text: HMC849LP4CE v03.0311 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless
|
Original
|
HMC849LP4CE
HMC849LP4CE
|
PDF
|
HMC849LP4CE
Abstract: hmc849 HMC849LP H849 HMC849LP4C ALPHA spdt Switch HMC849LP4
Text: HMC849LP4CE v02.0410 HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz Typical Applications Features The HMC849LP4CE is ideal for: High Isolation: up to 60 dB • Cellular/4G Infrastructure Single Positive Control: 0/+3V to +5V • WiMAX, WiBro & Fixed Wireless
|
Original
|
HMC849LP4CE
HMC849LP4CE
hmc849
HMC849LP
H849
HMC849LP4C
ALPHA spdt Switch
HMC849LP4
|
PDF
|
schematic diagram phone path
Abstract: H547 ALPHA spdt Switch
Text: HMC547LC3 v00.0811 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 28.0 GHz Typical Applications Features The HMC547LC3 is ideal for: High Isolation: 45 dB @ 10 GHz 40 dB @ 20 GHz • Fiber Optics & Broadband Telecom Low Insertion Loss: 1.6 dB @ 10 GHz 1.9 dB @ 20 GHz
|
Original
|
HMC547LC3
HMC547LC3
schematic diagram phone path
H547
ALPHA spdt Switch
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC232LP4 / 232LP4E v04.0110 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12 GHz Typical Applications Features The HMC232LP4 E is ideal for: Isolation: 60 dB @ 3 GHz 52 dB @ 6 GHz • Telecom Infrastructure Input P1dB: +27 dBm • Microwave Radio & VSAT Insertion Loss: 1.5 dB Typical @ 6 GHz
|
Original
|
HMC232LP4
232LP4E
16mm2
HMC-DK005
|
PDF
|
HMC190AMS8
Abstract: HMC190A HMC190 H190A HMC239S8
Text: HMC190AMS8 / 190AMS8E v01.0210 GaAs MMIC SPDT Switch DC - 3 GHz Typical Applications Features The HMC190AMS8 E is ideal for: Low Insertion Loss: 0.4 dB • MMDS & WirelessLAN Ultra Small Package: MSOP8 • Portable Wireless High Input IP3: +50 dBm Positive Control: 0/+3V @ 3 µA
|
Original
|
HMC190AMS8
190AMS8E
HMC190A
HMC190
H190A
HMC239S8
|
PDF
|
h232
Abstract: HMC232LP4 ALPHA spdt Switch 232LP4E HMC232LP4E spdt switch dbm HMC-DK005
Text: HMC232LP4 / 232LP4E v04.0110 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 12 GHz Typical Applications Features The HMC232LP4 E is ideal for: Isolation: 60 dB @ 3 GHz 52 dB @ 6 GHz • Telecom Infrastructure Input P1dB: +27 dBm • Microwave Radio & VSAT Insertion Loss: 1.5 dB Typical @ 6 GHz
|
Original
|
HMC232LP4
232LP4E
16mm2
HMC-DK005
h232
ALPHA spdt Switch
232LP4E
HMC232LP4E
spdt switch dbm
|
PDF
|
HMC547LP3E
Abstract: HMC547LP3 20 GHz PIN diode GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
Text: HMC547LP3 / 547LP3E v01.1007 GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20 GHz Typical Applications Features The HMC547LP3 & HMC547LP3E is ideal for: High Isolation: >50 dB up to 5 GHz >45 dB up to 15 GHz • Basestation Infrastructure Low Insertion Loss: 1.6 dB @ 10 GHz
|
Original
|
HMC547LP3
547LP3E
HMC547LP3
HMC547LP3E
20 GHz PIN diode
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
|
PDF
|
HMC132G7
Abstract: HMC347G8
Text: HMC347G8 v02.0605 GaAs MMIC HERMETIC SMT SPDT SWITCH, DC - 8.0 GHz Typical Applications Features The HMC347G8 is ideal for: Isolation: 42 dB @ 2.5 GHz 30 dB @ 6.0 GHz • Telecom Infrastructure Insertion Loss: 2.0 dB @ 6.0 GHz • Microwave Radio & VSAT Non-Reflective Design
|
Original
|
HMC347G8
HMC347G8
HMC132G7
|
PDF
|
H190A
Abstract: No abstract text available
Text: HMC190AMS8 / 190AMS8E v01.0210 GaAs MMIC SPDT SwITCh DC - 3 Ghz Typical Applications Features the hMc190AMS8 e is ideal for: Low insertion Loss: 0.4 dB • MMDS & wirelessLAN Ultra Small Package: MSOP8 • Portable wireless high input iP3: +50 dBm Positive control: 0/+3V @ 3 µA
|
Original
|
HMC190AMS8
190AMS8E
H190A
|
PDF
|
H190A
Abstract: HMC190AMS8E
Text: HMC190AMS8 / 190AMS8E v01.0210 GaAs MMIC SPDT SWITCH DC - 3 GHz Typical Applications Features The HMC190AMS8 E is ideal for: Low Insertion Loss: 0.4 dB • MMDS & WirelessLAN Ultra Small Package: MSOP8 • Portable Wireless High Input IP3: +50 dBm Positive Control: 0/+3V @ 3 A
|
Original
|
HMC190AMS8
190AMS8E
H190A
HMC190AMS8E
|
PDF
|
|
|
HMC132C8
Abstract: HMC347C8
Text: HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz Typical Applications Features The HMC347C8 is ideal for: Isolation: 50 dB @ 2.5 GHz 36 dB @ 8.0 GHz • Telecom Infrastructure Insertion Loss: 2.0 dB Typical • Microwave Radio & VSAT
|
Original
|
HMC347C8
HMC347C8
HMC132C8
|
PDF
|
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
Abstract: HMC132C8 HMC347C8
Text: HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Typical Applications Features The HMC347C8 is ideal for: Isolation: 50 dB @ 2.5 GHz 36 dB @ 8 GHz • Telecom Infrastructure Insertion Loss: 2 dB Typical • Microwave Radio & VSAT Non-Reflective Design
|
Original
|
HMC347C8
HMC347C8
GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz
HMC132C8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC347C8 v01.0404 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Typical Applications Features The HMC347C8 is ideal for: Isolation: 50 dB @ 2.5 GHz 36 dB @ 8 GHz • Telecom Infrastructure Insertion Loss: 2 dB Typical • Microwave Radio & VSAT Non-Relective Design
|
Original
|
HMC347C8
HMC347C8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs MM1C SPDT FET Switch 0 3 Alpha Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 G H z ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation Product\Temp. Stability
|
OCR Scan
|
AS006R2-01,
AS006R2-10,
AS004R2-08,
AS004R2-11
AS004R2-11
AS006R2-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages
|
OCR Scan
|
AS358-62
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC Two Watt High Linearity Cellular SPDT Switch 0 Alpha AS103-59 Features • High Linearity 55 dBm IP3 @ 900 M Hz ■ Low Loss (0.35 dB @ 900 M Hz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control Voltages ■ Extremely Low Cost
|
OCR Scan
|
AS103-59
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs 1C Positive Control Non-Reflective SPDT Switch 0.5-2 GHz ES Alpha AS171-73 Features 9OT-6 • Positive Control Voltage 0.074 1.90 mm REF. r i P'N6^n n ■ Non-Reflective ■ Low DC Power Consumption 0.126 (3.20 mm) t - 0.087 (2.20 mm) f 0.071 (1.80 mm)
|
OCR Scan
|
AS171-73
AS171-73
3/99A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch Chip Alpha With Integral Driver DC-6 GHz AK006R2-00, AK006M2-00 Features • Integral Drive +5V, -5V ; CMOS and TTL Compatible ■ Low Power Consumption <20 mW ■ 20 Nanosec Switching Time ■ Chip Size 41 x 43 x 8 Mils ■ Non-Reflective or Reflective (Open)
|
OCR Scan
|
AK006R2-00,
AK006M2-00
AK006R2
AK006R2-00
|
PDF
|
AS239-12
Abstract: No abstract text available
Text: ES Alpha GaAs 1C SPDT Reflective Switch DC-2.5 GHz A S 239-12 Features SOIC-8 • Low Insertion Loss 0.4 dB @ 1 GHz PIN 8 ■ High Isolation (35 dB @ 1 GHz) 0.050 (1.27 mm) BSC M ■ General Purpose Switching 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 IN D IC A TO R -
|
OCR Scan
|
AS239-12
AS239-12
3/98A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GaAs IC BGA-MCM High Isolation SPDT GSM Synthesizer Switch 0.7-1.1 GHz ES Alpha AB100-90 Features BGA-MCM • High Isolation 90 dB @ 900 MHz 0.031 'A T C O R N E R A ‘AV CORNER n (0 .8 0 m m ) - ■ +5 V Control Voltages ■ 8 x 8 x 1.6 mm Ball Grid Array (BGA)
|
OCR Scan
|
AB100-90
AB100-90
3/99A
|
PDF
|
