capax 7-35
Abstract: Felsic capacitors 125 FRS CO 47 capacitor sic-safco felsic co 18 Felsic capacitors FELSIC 018 CO 18 sic-safco capacitor FELSIC 037 CO 37 capacitor sic-safco felsic 039 Sic-Safco promisic
Text: Modèles de remplacement / Replacement types 4 Anciens modèles / Old ranges Modèles de remplacement /Replacement types ALSIC 105 FRS 1 ALSIC M 105 FRS (1) ALSIC 125 ALSIC FP CELLSIC CI IND 38.1 CMF FP - CMF CMF FRS 12.3 EPSIC R 105 ALSIC IR - ALSIC 145
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DFM1200NXM33-F000
Abstract: 100FITS
Text: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating
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DFM1200NXM33-F000
DS5912-1
LN25215)
DFM1200NXM33-F000
100FITS
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DFM200PXM33-F000
Abstract: basic ac motor reverse forward electrical diagram
Text: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.0 March 2007 LN25211 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM200PXM33-F000
DS5908-
LN25211)
DFM200PXM33-F000
3300-volt,
basic ac motor reverse forward electrical diagram
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DFM100PXM33-F000
Abstract: DFM100PXM basic ac motor reverse forward electrical diagram ALSIC 145
Text: DFM100PXM33-F000 Fast Recovery Diode Module DS5907- 1.0 March 2007 LN25210 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM100PXM33-F000
DS5907-
LN25210)
DFM100PXM33-F000
3300-volt,
DFM100PXM
basic ac motor reverse forward electrical diagram
ALSIC 145
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basic ac motor reverse forward electrical diagram
Abstract: DFM400PXM33-F000
Text: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.0 March 2007 LN25212 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM400PXM33-F000
DS5909-
LN25212)
DFM400PXM33-F000
3300-volt,
basic ac motor reverse forward electrical diagram
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basic ac motor reverse forward electrical diagram
Abstract: Dynex Semiconductor DFM100PXM33-F000
Text: DFM100PXM33-F000 Fast Recovery Diode Module DS5907- 1.1 June 2008 LN26126 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF
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DFM100PXM33-F000
DS5907-
LN26126)
DFM100PXM33-F000
3300-volt,
basic ac motor reverse forward electrical diagram
Dynex Semiconductor
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DFM400NXM33-F000
Abstract: 3300V FRD
Text: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating
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DFM400NXM33-F000
DS5910-1
LN25214)
DFM400NXM33-F000
3300V FRD
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ALSIC 145
Abstract: DFM400PXM33-F000
Text: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.1 May 2008 LN26124 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 400A 800A Isolated AlSiC Base with AlN substrates
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DFM400PXM33-F000
DS5909-
LN26124)
DFM400PXM33-F000
3300-volt,
ALSIC 145
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PDF
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DFM200PXM33-F000
Abstract: No abstract text available
Text: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.1 May 2008 LN26125 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 200A 400A Isolated AlSiC Base with AlN substrates
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DFM200PXM33-F000
DS5908-
LN26125)
DFM200PXM33-F000
3300-volt,
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DFM800NXM33-F000
Abstract: No abstract text available
Text: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating
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DFM800NXM33-F000
DS5911-1
LN25213)
DFM800NXM33-F000
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 • Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability
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0150P450300
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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1200E330100
5SYA1556-04
CH-5600
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DFM800XXM45-TS001
Abstract: No abstract text available
Text: DFM800XXM45-TS001 Fast Recovery Diode Module Replaces DS6096-1 DS6096-2 October 2013 LN31066 FEATURES KEY PARAMETERS • VRRM VF IF IFM 10.2kV Isolation Package Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base With AlN Substrates
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DFM800XXM45-TS001
DS6096-1
DS6096-2
LN31066)
16rovided
DFM800XXM45-TS001
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IGBT CHIP 600V ABB
Abstract: ABB IGBT diode 1200V 2400E-12
Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Oct 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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2400E120100
5SYA1561-00
CH-5600
IGBT CHIP 600V ABB
ABB IGBT diode 1200V
2400E-12
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A736065
Abstract: No abstract text available
Text: 2 000 h / 145°C 32 000 h / 105°C ALSIC 145 10 . 100 V 22 . 4700 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 145°C / 56 jours/days L.L. Specifications NFC 83 110 - Longue durée CECC 30 300 CEI 60 384-4 longue durée Test d'endurance normalisé sous Un :
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5000h
A736065
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A736022
Abstract: A736081 A736063 A736047 A736040 A736064 A736103 A736065 A736066
Text: 2 000 h / 145°C 32 000 h / 105°C ALSIC 145 10 . 100 V 22 . 4700 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 145°C / 56 jours/days L.L. Specifications NFC 83 110 - Longue durée CECC 30 300 CEI 60 384-4 longue durée Test d'endurance normalisé sous Un :
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5000h
A736022
A736081
A736063
A736047
A736040
A736064
A736103
A736065
A736066
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ALSIC 145
Abstract: A736063 A736085 A736106 A736066 A736044 A736060 A736047 A736045 A736084
Text: 2 000 h / 145°C 32 000 h / 105°C ALSIC 145 10 . 100 V 22 . 4700 µF ∅ 10 . 16 mm Spécifications applicables - 55°C / + 145°C / 56 jours/days L.L. Specifications NFC 83 110 - Longue durée CECC 30 300 CEI 60 384-4 longue durée Test d'endurance normalisé sous Un :
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5000h
ALSIC 145
A736063
A736085
A736106
A736066
A736044
A736060
A736047
A736045
A736084
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cosmic
Abstract: No abstract text available
Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-02 Nov 10 • Ultra low loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0150P450300
CH-5600
cosmic
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1433-00 12-2013 5SND 0500N330300 HiPak IGBT Module VCE = 3300 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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0500N330300
CH-5600
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5SNA 1200E330100
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-03 May 05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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1200E330100
5SYA1556-03
CH-5600
5SNA 1200E330100
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igbt 5SNG
Abstract: IC 7400 configuration 5SNG0150P450300 5SNG 0150P450300
Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-02 Sep 09 • Ultra low loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability
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0150P450300
CH-5600
igbt 5SNG
IC 7400 configuration
5SNG0150P450300
5SNG 0150P450300
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-04 07-2013 • Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling
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0150P450300
UL1557,
E196689
CH-5600
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PDF
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IGBT CHIP 600V ABB
Abstract: No abstract text available
Text: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Apr 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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2400E120100
5SYA1561-00
CH-5600
IGBT CHIP 600V ABB
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 4500 V 150 A ABB HiPakTM IGBT Module 5SNG 0150P450300 Doc. No. 5SYA 1593-03 04-2012 Ultra low loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal
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0150P450300
CH-5600
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PDF
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