Untitled
Abstract: No abstract text available
Text: LX1990 EVALUATION BOARD USER’S GUIDE LX1990 Dual Programmable LED Current Sink I N T E G R A T E D P R O D U C T S LX1990 EVALUATION BOARD USER GUIDE TABLE OF CONTENTS W W W. Microsemi .COM Overview. 3
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LX1990
CMD383UGC
CMD333UBC
MMBT2222LT1
LX190
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orcad
Abstract: ORCAD BOOK TRANSISTOR SUBSTITUTION DATA BOOK 1993 fpga orcad schematic symbols 9346n 80500 TRANSISTOR grid tie inverter schematics xc3000.lib SDT386 TRANSISTOR SUBSTITUTION DATA BOOK
Text: OrCAD Interface/ Tutorial Guide Introduction Getting Started OrCAD SDT Design Techniques FPGA Design Issues EPLD Design Issues Functional Simulation Design Implementation Timing Simulation OrCAD VST Simulation Issues Manual Translation SDT Tutorial VST Tutorial
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Untitled
Abstract: No abstract text available
Text: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is
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SD2921
SD2921
1011000D
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1200 uF 63V capacitor
Abstract: 1200 uF 63V capacitor 2% SD2921 SD2921-10 VK200 m 404 g
Text: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz . THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES DESCRIPTION
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SD2921-10
150WMIN.
SD2921-10
SD2921
SDC15
1200 uF 63V capacitor
1200 uF 63V capacitor 2%
VK200
m 404 g
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BUL128
Abstract: alu schematic circuit with transistor
Text: S G S -T H O M S O N «l!3mi ¥[FM[]©S BUL128 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . • « . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
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BUL128
BUL128
BUL128;
62-19C
alu schematic circuit with transistor
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BUL128FP
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BUL128FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
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BUL128FP
SC-0351
O-22QFP
BUL128FP
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H7442
Abstract: Matra-Harris Semiconductor
Text: MB GATE ARRAY SERIES 2/t/2 METAL LAYERS M ÌM ÌIII /MATRA' HARRIS SEMICONDUCTOR MB 850 • MB 1300 • MB 2000 MB 2700 • MB 4000 - MB 5000 -MB 7500 MAY 1986 PR B LÎISIÈ S A R V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. F IL E # E817 3 4 (N) NPN TRANSISTOR WITH INTEGRATED
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BUH315D
ISOWATT218
P025C
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BUL310
Abstract: No abstract text available
Text: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED
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BUW34
Abstract: BUW35 C526
Text: r 7 z “ S G S - m o M S O N b u w 3 4 / b 7# u w 3 5 B U W 36 HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUW34, BUW 35 and BUW 36 are silicon multiepitaxiai mesa NPN transistors in Jedec TO-3 me tal case. They are intended for high voltage, fast
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BUW34,
BUW34
BUW35
C526
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L128 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
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BULK128D
Abstract: BULK128D-B
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDERING CODES : BULK128D-A AND BULK128D-B . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR
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BULK128D
BULK128D-A
BULK128D-B
SC-0351
OT-82
P032A
BULK128D
BULK128D-B
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full subtractor circuit using xor and nand gates
Abstract: vhdl code for multiplexer 64 to 1 using 8 to 1 8 BIT ALU design with vhdl code using structural ALU 74181 verilog verilog code for 64 bit barrel shifter full subtractor implementation using 4*1 multiplexer 4 BIT ALU design with vhdl code using structural 32 bit ALU vhdl code full subtractor using NOR gate for circuit diagram alu 74181 pin diagram
Text: V L S I T E C H N O L O G Y INC 47E D MÊ 1 3 0 0 3 4 7 VLSI T ech n o lo g y , in c. 000ñ7ñb 7 • VTI t . ¥ 2 ,v / VDP370 SERIES 1-MICRON DATAPATH COMPILER LIBRARY FEATURES • Compiles to an optimized layout for cell-based designs or to a portable netlist for gate array or standard cell
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VDP370
VSC300
full subtractor circuit using xor and nand gates
vhdl code for multiplexer 64 to 1 using 8 to 1
8 BIT ALU design with vhdl code using structural
ALU 74181 verilog
verilog code for 64 bit barrel shifter
full subtractor implementation using 4*1 multiplexer
4 BIT ALU design with vhdl code using structural
32 bit ALU vhdl code
full subtractor using NOR gate for circuit diagram
alu 74181 pin diagram
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Untitled
Abstract: No abstract text available
Text: g MOTOROLA MC3453 MTTL Com patible Quad Line Driver The MC3453 features four SN75110 type line drivers with a common inhibit input. When the inhibit input is high, a constant output current is switched between each pair of output terminals in response to the logic level
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MC3453
MC3453
SN75110
SN75110
b3b72S3
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BULK381D
Abstract: BULK380D BULK381
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULK380D BULK381D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . LARGERBSOA
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BULK380D
BULK381D
BULK380D
OT-82
P032A
BULK381D
BULK381
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. F IL E # E817 3 4 (N) NPN TRANSISTOR WITH INTEGRATED
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BUH515D
ISOWATT218
P025C
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Untitled
Abstract: No abstract text available
Text: BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS:
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BULD118D-1
SC-0351
O-251
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Untitled
Abstract: No abstract text available
Text: rz7 ^ 7# SCS-THOMSON RfflDeHSHLiCTM Oei H C C /H C F 4 0 1 6 B QUAD BILATERAL SWITCH • 20V DIGITAL OR ± 10N/ PEAK-TO-PEAK SWITCHING . 280Q TYPICAL ON RESISTANCE FOR 15V OPERATION . SWITCH ON RESISTANCE MATCHED TO WITHIN 10n TYP. OVER 15V SIGNAL INPUT RANGE
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10kHz,
10OpA
1012Q
HCC/HCF4016B
PLCC20
00bbl71
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SC-0351
Abstract: BULD118-1
Text: S G S -T H O M S O N B U L D 118-1 iMiniSiRitaignigfafiRiOBinieg HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:
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BULD118-1
O-251)
SC-0351
O-251
0068771-E
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20AWG
Abstract: M252 SD57120 XSD57120 C22j SC13460
Text: SD57120 RF POWER TRANSISTORS The Ldm oS T FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . • . . EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL P o u t = 120 W with 13 dB gain @ 960 MHz BeO FREE PACKAGE INTERNAL INPUT MATCHING
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SD57120
SD57120
XSD57120
30mil
sc14920
080X45
20AWG
M252
XSD57120
C22j
SC13460
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ BUL118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED APPLICATIONS:
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BUL118
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EM 231 WIRING DIAGRAM
Abstract: em 223 cn TRANSISTOR BO 344 siemens rs 1064
Text: SIEMENS NPN Silicon RF Transistor BFP 420 Features • For H igh G ain Low N oise A m plifiers • • For O scillators up to 9 GHz N oise Figure F = 1.05 dB at 1.8 G H z O utstand in g G ms = 20 dB at 1.8 G H z • • • T ransition Frequency fT > 20 GHz
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62702-F1591
EM 231 WIRING DIAGRAM
em 223 cn
TRANSISTOR BO 344
siemens rs 1064
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SC15010
Abstract: SC-15010 10pf Capacitor dimension 20NE50 atc100b6r2 20 NE 50 200 pF air variable capacitor sc15000 10pf ceramic CAPACITOR variable resistor surface mount
Text: SD57030-01 RF POWER TRANSISTORS The Ldm oS T FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION • P o u t = 30 W with 13 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57030-01 is a common source N-Channel
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SD57030-01
SD57030-01
XSD57030-01
SC15010
SC15000
SC15010
SC-15010
10pf Capacitor dimension
20NE50
atc100b6r2
20 NE 50
200 pF air variable capacitor
sc15000
10pf ceramic CAPACITOR
variable resistor surface mount
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Untitled
Abstract: No abstract text available
Text: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
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BUV298V
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