95N3LLH6
Abstract: 95n3l STP95N3LLH6 STB95N3LLH6 STD95N3LLH6 152-28 15228 STD95N3L
Text: STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 30 V 0.0042 Ω STD95N3LLH6 30 V 0.0042 Ω 80 A STP95N3LLH6 30 V 0.0042 Ω
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STB95N3LLH6,
STD95N3LLH6
STP95N3LLH6,
STU95N3LLH6
O-220
STP95N3LLH6
STB95N3LLH6
95N3LLH6
95n3l
STP95N3LLH6
STB95N3LLH6
STD95N3LLH6
152-28
15228
STD95N3L
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75N3LLH6
Abstract: STD75N3LLH6 smd diode code B4 ST STD75N3L STU75N3LLH6 095B4 75n3l TO-251 footprint
Text: STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.0059 Ω 75 A STU75N3LLH6-S 30 V
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STD75N3LLH6
STU75N3LLH6,
STU75N3LLH6-S
STU75N3LLH6
75N3LLH6
STD75N3LLH6
smd diode code B4 ST
STD75N3L
STU75N3LLH6
095B4
75n3l
TO-251 footprint
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STP105N3LLH7
Abstract: No abstract text available
Text: STD105N3LLH7, STP105N3LLH7, STU105N3LLH7 N-channel 30 V, 0.0025 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet — preliminary data Features TAB Type VDSS RDS on max ID STD105N3LLH7 30 V 0.0032 Ω 80 A
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STD105N3LLH7,
STP105N3LLH7,
STU105N3LLH7
O-220
STD105N3LLH7
STP105N3LLH7
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STD96N3LLH6
Abstract: 96n3llh6
Text: STD96N3LLH6 N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD96N3LLH6 30 V 0.0042 Ω 80 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness
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STD96N3LLH6
AM01474v1
STD96N3LLH6
96n3llh6
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75n3l
Abstract: 75N3LLH6 STD75N3L diode bym stu75n3 STP75N3LLH6
Text: STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET VI DeepGATE™ Power MOSFET Features TAB Order codes VDSS STU75N3LLH6 TAB ID 3 < 0.0055 Ω STD75N3LLH6 STP75N3LLH6 RDS on max 1
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STD75N3LLH6,
STP75N3LLH6
STU75N3LLH6,
STU75N3LLH6-S
O-220,
STD75N3LLH6
STU75N3LLH6
O-220
75n3l
75N3LLH6
STD75N3L
diode bym
stu75n3
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95n3l
Abstract: STD95N3LLH6-H STD95N3LLH6 ecopack2 95N3LLH6
Text: STD95N3LLH6-H N-channel 30 V, 0.0037 Ω , 80 A, DPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max. ID STD95N3LLH6-H 30 V 0.0042 Ω 80 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness
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STD95N3LLH6-H
AM01474v1
95n3l
STD95N3LLH6-H
STD95N3LLH6
ecopack2
95N3LLH6
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75n3l
Abstract: STU75N3LLH6 STD75N3LLH6 STD75N3L 75N3LLH6 75n3 std75n STD75N3LL
Text: STD75N3LLH6 STU75N3LLH6 N-channel 30 V, 0.0045 Ω, 75 A, DPAK, IPAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID STD75N3LLH6 30 V < 0.0055 Ω 75 A STU75N3LLH6 30 V < 0.006 Ω 75 A 3 3 2 • RDS(on) * Qg industry benchmark
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STD75N3LLH6
STU75N3LLH6
AM01474v1
75n3l
STU75N3LLH6
STD75N3L
75N3LLH6
75n3
std75n
STD75N3LL
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STD95N4LF3
Abstract: 95N4L
Text: STD95N4LF3 N-channel 40 V, 5.0 mΩ, 80 A DPAK STripFET Power MOSFET Features Type VDSS RDS on max STD95N4LF3 40 V < 6.0 mΩ ID PD 80 A(1) 110 W 3 1. Value limited by wire bonding • 100% avalanche tested ■ Logic level drive 1 DPAK Applications ■
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STD95N4LF3
STD95N4LF3
95N4L
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STD95N4LF3
Abstract: STB95N4LF3 95N4LF3 95N4L
Text: STB95N4LF3 STD95N4LF3 N-channel 40 V, 5.0 mΩ, 80 A DPAK, D2PAK STripFET III Power MOSFET Features RDS on max ID Type VDSS STD95N4LF3 40 V < 6.0 mΩ 80 A(1) 110 W STB95N4LF3 (2) 40 V < 6.0 mΩ 80 A PD 110 W 3 1. Value limited by wire bonding 100% avalanche tested
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STB95N4LF3
STD95N4LF3
STD95N4LF3
STB95N4LF3
95N4LF3
95N4L
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Untitled
Abstract: No abstract text available
Text: STI300N4F6 N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET VI DeepGATE™ Power MOSFET in a I²PAK package Datasheet — production data Features Order code VDS RDS on max ID STI300N4F6 40 V 2.2 mΩ 160 A(1) 1. Limited by wire bonding • Standard level VGS(th)
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STI300N4F6
AM01474v1
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STI300N4F6
Abstract: No abstract text available
Text: STI300N4F6 N-channel 40 V, 1.4 mΩ, 160 A, I²PAK STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max. ID STI300N4F6 40 V 2.0 mΩ 160 A(1) 1. Limited by wire bonding • Standard level VGS(th) ■ 175 °C junction temperature
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STI300N4F6
AM01474v1
STI300N4F6
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Untitled
Abstract: No abstract text available
Text: STB155N3H6 STD155N3H6 N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET VI DeepGATE™ Power MOSFET Features Order codes VDSS RDS on max ID STB155N3H6 30 V < 3 mΩ 80 A (1) STD155N3H6 30 V < 3 mΩ 80 A (1) 1. Limited by wire bonding 3 3 1 1 • RDS(on) * Qg industry benchmark
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STB155N3H6
STD155N3H6
STD155N3H6
AM01474v1
155Nd
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95n3l
Abstract: STD95N3LLH6 STB95N3LLH6 95N3LLH6 STU95N3LLH6
Text: STB95N3LLH6 STD95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STB95N3LLH6 30 V 0.0042 Ω 80 A STD95N3LLH6 30 V 0.0042 Ω 80 A STU95N3LLH6 30 V 0.0047 Ω
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STB95N3LLH6
STD95N3LLH6,
STU95N3LLH6
STD95N3LLH6
95n3l
STD95N3LLH6
STB95N3LLH6
95N3LLH6
STU95N3LLH6
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STP105N3LL
Abstract: No abstract text available
Text: STP105N3LL N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet − production data Features Order code VDSS RDS on max ID STP105N3LL 30 V 3.5 mΩ 150 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STP105N3LL
O-220
O-220
AM01474v1
STP105N3LL
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