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    AN1294

    Abstract: No abstract text available
    Text: STAP85025 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package


    Original
    PDF STAP85025 2002/95/EC STAP85025 AN1294

    STAP85035

    Abstract: J-STD-020B STMICROELECTRONICS MSL PACKAGES
    Text: STAP85035 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package


    Original
    PDF STAP85035 2002/95/EC STAP85035 J-STD-020B STMICROELECTRONICS MSL PACKAGES

    STAP85035

    Abstract: No abstract text available
    Text: STAP85035 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PDF STAP85035 2002/95/EC STAP85035

    GP413

    Abstract: 945 TRANSISTOR 700B AN1294
    Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package


    Original
    PDF STAP57030 PowerSO-10RF STAP57030 AM02217 GP413 945 TRANSISTOR 700B AN1294

    STAP85025

    Abstract: AN1294 J-STD-020B
    Text: STAP85025 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PDF STAP85025 2002/95/EC STAP85025 AN1294 J-STD-020B

    945 TRANSISTOR

    Abstract: 700B AN1294 GP413
    Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package


    Original
    PDF STAP57030 PowerSO-10RF STAP57030 945 TRANSISTOR 700B AN1294 GP413