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Text: STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS on max STL9N60M2 ID 0.86 Ω 650 V 4.8 A • Extremely low gate charge 1
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Text: STL105NS3LLH7 N-channel 30 V, 0.0032 Ω typ., 27 A STripFET VII DeepGATE™ Power MOSFETs plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - preliminary data Features Order code VDS RDS on max ID STL105NS3LLH7 30 V 0.0039 Ω 27 A • Very low on-resistance
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stl105ns3llh7
Abstract: No abstract text available
Text: STL105NS3LLH7 N-channel 30 V, 0.0033 Ω typ., 27 A STripFET VII DeepGATE™ Power MOSFETs plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - preliminary data Features Order code VDS RDS on max ID STL105NS3LLH7 30 V 0.0039 Ω 27 A • Very low on-resistance
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AM15540v3
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Abstract: No abstract text available
Text: STL160NS3LLH7 N-channel 30 V, 0.0016 Ω typ., 36 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - production data Features Order code VDS RDS on max ID STL160NS3LLH7 30 V 0.0021 Ω 36 A • Very low on-resistance
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Abstract: No abstract text available
Text: STL160NS3LLH7 N-channel 30 V, 0.0016 Ω typ., 36 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - production data Features Order code VDS RDS on max ID STL160NS3LLH7 30 V 0.0021 Ω 36 A • Very low on-resistance
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Abstract: No abstract text available
Text: STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - preliminary data Features 1 Order code VDS @ TJmax RDS on max ID STL9N60M2 650 V 0.86 Ω 4.8 A • Extremely low gate charge
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Abstract: No abstract text available
Text: STL10N60M2 N-channel 600 V, 0.580 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID STL10N60M2 650 V 0.660 Ω 5.5 A • Extremely low gate charge
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Abstract: No abstract text available
Text: STL10N60M2 N-channel 600 V, 0.580 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max ID STL10N60M2 650 V 0.608 Ω 5.5 A (1) 1. The value is rated according to Rthj-case and limited
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Abstract: No abstract text available
Text: STL160NS3LLH7 N-channel 30 V, 0.0016 Ω typ., 36 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - target specification Features Order code VDS RDS on max ID STL160NS3LLH7 30 V 0.0021 Ω 36 A • Very low on-resistance
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Abstract: No abstract text available
Text: STL110NS3LLH7 N-channel 30 V, 0.0027 Ω typ., 28 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - preliminary data Features Order code VDS RDS on max ID STL110NS3LLH7 30 V 0.0034 Ω 28 A • Very low on-resistance
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