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Catalog Datasheet	MFG & Type	Document Tags	PDF
af201 Abstract: AOX2051 Am319 AF211 AF212 AF203 AF216 AM2024 ls 11s AM211 Text: y i Am3550 MixeqT ECL/TTL I/O Mask-Programmable Gate Array • — PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed	OCR Scan	Am3550 Am3550 wf010980 wfr02682 7321A 07322a af201 AOX2051 Am319 AF211 AF212 AF203 AF216 AM2024 ls 11s AM211	PDF
am 332 Abstract: AM2001 Ax292 Text: Am3500 Mask-Programmable ECL G ate Array PR ELIM IN ARY > 3 u en DISTINCTIVE CHARACTERISTICS U nlim ited use o f high-pow er m acros Large m acrocell library containing o v e r 200 functions - Supported o n m ajor CAE w orkstations - S uperset o f MCA-2 Advanced oxide isolated bipolar LSI process technology	OCR Scan	Am3500 TC002800 WF010980 7322A am 332 AM2001 Ax292	PDF
af201 Abstract: F2018 AM211 am 332 F2017 SEM 2005 16 PINS inverter Text: Am3550 Mixeçt ÉCL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed = 0.7 ns (Medium)	OCR Scan	Am3550 7321A 7322A af201 F2018 AM211 am 332 F2017 SEM 2005 16 PINS inverter	PDF
am2022 Abstract: am22 full adder circuit using xor and nand gates AM2031 AM2024 AM2051 t950 half adder circuit using nor and nand gates ax253 AM290 Text: Am 3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns High-performance, low-power ECL gates	OCR Scan	Am3525 Am3525 TC002800 WF010980 7321A D7322A am2022 am22 full adder circuit using xor and nand gates AM2031 AM2024 AM2051 t950 half adder circuit using nor and nand gates ax253 AM290	PDF
AM2001 Abstract: AM223 full adder circuit using nor gates AM2005 AX202 AM2031 AM319 abx2002 full adder circuit using xor and nand gates ax253 Text: Am 3500 Mask-Programmable ECL G ate Array PRELIM IN ARY > 3 DISTINCTIVE CHARACTERISTICS • • Up to 4988 equivalent gates - 576 internal cells - Up to 134 l/O s H igh-perform ance, low -pow er ECL gates - W orst case Tpcj = 0.6 ns Hi-Speed = 0.7 ns (Medium)	OCR Scan	Am3500 Am3500 TC002800 WF010980 7321A 7322A AM2001 AM223 full adder circuit using nor gates AM2005 AX202 AM2031 AM319 abx2002 full adder circuit using xor and nand gates ax253	PDF
AM3526 Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074 Text: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 \| 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s	OCR Scan	1T-42-11-13 WF001164 00ECH7Ã T-42-11-13 AM3526 2-bit half adder AM312 AM290 AM2019 AM2001 002074	PDF
AM2019 Abstract: 2-bit half adder layout AX253 AX201 AM2001 AX261 Text: * Am3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS • • • Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns	OCR Scan	Am3525 TC002800 7321A 7322A AM2019 2-bit half adder layout AX253 AX201 AM2001 AX261	PDF
AOX2053 Abstract: No abstract text available Text: ADVANC ED MICRO DEVICES 7b D E j 05575.25 0020=177 3 g " 025 7525 ADVANCED MICRO DEVICES r- Am3550 76C 2 0977 T - 4 2 - 1 1 —1 5 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 6228 equivalent gates - 576 internal cells	OCR Scan	Am3550 WFR02682 AOX2053	PDF