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    AM28F010 DIE Search Results

    AM28F010 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    AM28F010 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AM28F010

    Abstract: No abstract text available
    Text: FINAL Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase


    Original     		Am28F010 32-Pin PDF

    AM28F010

    Abstract: am28f010-200
    Text: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		Am28F010 32-Pin am28f010-200 PDF

    hot electron devices

    Abstract: AM28F010 am28f010-200 rev i
    Text: FINAL Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Flasherase Electrical Bulk Chip-Erase ■ High performance — 70 ns maximum access time ■ CMOS Low power consumption — One second typical chip-erase


    Original     		Am28F010 32-Pin c-250 hot electron devices am28f010-200 rev i PDF

    JC EC

    Abstract: am28f010 die AM28F010 0/am28f010 die am28f010-200 rev i
    Text: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current


    Original     		Am28F010 32-Pin JC EC am28f010 die 0/am28f010 die am28f010-200 rev i PDF

    AMD AM28F010 ca

    Abstract: AM29 flash 48-pin TSOP package tray tsop 48 PIN SOCKET pin identification AMD 2m flash memory Meritec Am29LV033B AM29F010 Am29F002N AM29F002
    Text: Flash Memory Quick Reference Guide Summer ’98 Package Migration Low-Voltage Am29LV004 Am29LV008B Am29LV081 Am29LV116B Am29LV017B 2 Mb 4 Mb 8 Mb 16 Mb Am29LV010B Am29LV001B Am29LV020B Am29LV102B Am29LV040B Am29LV104B 1 Mb 2 Mb 4 Mb Am29LV200 Am29DL400B Am29LV400


    Original     		Am29LV004 Am29LV008B Am29LV081 Am29LV116B Am29LV017B Am29LV010B Am29LV001B Am29LV020B Am29LV102B Am29LV040B AMD AM28F010 ca AM29 flash 48-pin TSOP package tray tsop 48 PIN SOCKET pin identification AMD 2m flash memory Meritec Am29LV033B AM29F010 Am29F002N AM29F002 PDF

    ST93C86

    Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
    Text: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM


    Original     		GALEP32 AT28C010 AT28C04 AT28C16 AT28C17 AT28C256 AT28C256 AT28C64 AT28C64B CAT28C16A ST93C86 d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS PDF

    39SF020A

    Abstract: 39vf800a F29C31400T MX10FLCDPC w78e65p 39VF010 MX29F1601 49lf002a 93C26 M27C401CZ
    Text: Labtool-148C Version 3.30 <ALL> Device List ACTRANS AC29LV400B *44PS AC29LV400B *48TS ALi M6759 *44 M8720 Page 1 of 13 AC29LV400T *44PS AC29LV400T *48TS Alliance AS29F040 AS29LV400T *48TS AS29LV800T *48TS AS29LV400B *44PS AS29LV800B *44PS AS29LV400B *48TS


    Original     		Labtool-148C AC29LV400B M6759 M8720 AC29LV400T AS29F040 AS29LV400T AS29LV800T 39SF020A 39vf800a F29C31400T MX10FLCDPC w78e65p 39VF010 MX29F1601 49lf002a 93C26 M27C401CZ PDF

    Untitled

    Abstract: No abstract text available
    Text: a Preliminary Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption - 30 mA maximum active current - 1 0 0 nA maximum standby current ■


    OCR Scan     		Am28F010 32-Pin 8007-003A Am28F010-95C4JC Am28F010-95C3JC PDF

    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


    OCR Scan     		G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: AMD£I Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — One second typical chip-erase — 70 ns maximum access time ■ CMOS Low power consumption Flashrite Programming


    OCR Scan     		Am28F010 32-pin PDF

    EE-21

    Abstract: 28F010P
    Text: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current


    OCR Scan     		Am28F010 32-Pin D55752fl D3273D EE-21 28F010P PDF

    Untitled

    Abstract: No abstract text available
    Text: FI NA! AMDB Am28F010 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current


    OCR Scan     		Am28F010 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: & Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ — 90 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase


    OCR Scan     		Am28F010 32-pin 257S2Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 nA maximum standby current


    OCR Scan     		Am28F010 32-Pin PDF

    Am26F010

    Abstract: am26f AM28F010
    Text: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption


    OCR Scan     		Am28F010 32-Pin 0257S2Ã D033TÃ Am26F010 am26f PDF

    data programmers DIP PLCC

    Abstract: AMD 478 socket pinout
    Text: ADV MICRO MEMORY BÖE •.G2S?SSfl QGETÖBQ S ■ A M » 4 a Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memoty DISTINCTIVE CHARACTERISTICS ■ High performance - 9 0 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc+1 V


    OCR Scan     		Am28F010 -32-P 32-Pin 02S752fl data programmers DIP PLCC AMD 478 socket pinout PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 |is typical byte-program — 100 |iA maximum standby current


    OCR Scan     		32-pin TS032â 16-038-TSOP-2 Am28F010 TSR032â TSR032 PDF

    AM2BF010

    Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
    Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption


    OCR Scan     		Am28F010 32-Pin AM2BF010 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: F IN A L AM Dû A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance — 70 ns maximum access time ■ CMOS Low power consumption — One second typical chip-erase ■ — 10


    OCR Scan     		32-Pin Am28F010 PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 ps typical byte-program — 100 pA maximum standby current


    OCR Scan     		32-pin Am28F010 PDF

    AM28F010

    Abstract: No abstract text available
    Text: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 ps typical byte-program — 100 pA maximum standby current


    OCR Scan     		Am28F010 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current


    OCR Scan     		32-Pin 28F010 PDF

    AMD Flash Memory

    Abstract: No abstract text available
    Text: Section 4 Advantages of AM D’s 12.0 V Flash Mem ory Fam ily AM D’s Flash Mem ories Create a Defacto Industry Standard AMD is the first company to address the issue of device compatibility. In the world of Flash memories today, no two device offerings can be used as 100% compatible alter­


    OCR Scan     		32-pin 32-bit AMD Flash Memory PDF

    AM28F020

    Abstract: No abstract text available
    Text: f !NAL AMDH Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase


    OCR Scan     		Am28F020 32-pin PDF