AM29F016
Abstract: EDI7F332MC
Text: White Electronic Designs EDI7F332MC 2Mx32 FLASH MODULE FEATURES 2Mx32 and 2x2Mx32 Densities Based on AMD - AM29F016 Flash Device Fast Read Access Time - 90ns Data Polling and Toggle Bit feature for detection of program or erase cycle completion
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EDI7F332MC
2Mx32
AM29F016
2x2Mx32
EDI7F2332MC90BNC
EDI7F2332MC100BNC
EDI7F2332MC120BNC
EDI7F2332MC150BNC
EDI7F332MC
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MARK J3
Abstract: AM29F016 EDI7F332MC amd AM29F016
Text: EDI7F332MC 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2Mx32 respectively. The modules are based on AMDs AM29F016 - 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAMS
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EDI7F332MC
2Mx32
EDI7F332MC
EDI7F2332MC
AM29F016
EDI7F332MC-BNC:
150ns
A0-A20
MARK J3
amd AM29F016
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AM29F016
Abstract: 80 pin simm flash EDI7F332MC
Text: EDI7F332MC White Electronic Designs 2Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2Mx32 respectively. The modules are based on AMDs AM29F016 - 2Mx8 Flash device in TSOP packages which are mounted on a FR4 substrate.
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EDI7F332MC
2Mx32
EDI7F332MC
EDI7F2332MC
AM29F016
EDI7F322MC-BNC:
150ns
80 pin simm flash
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AM29F016
Abstract: AM29F016-90 SA28 SA29 SA30 AM29F016 amd
Text: FINAL Am29F016 Advanced Micro Devices 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program Algorithms — Minimizes system level power requirements
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Am29F016
48-pin
AM29F016-90
SA28
SA29
SA30
AM29F016 amd
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9018
Abstract: AM29F016 EDI7F332MC
Text: EDI7F332MC 2Megx32 2Megx32 Flash Module The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 meg x 32 respectively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. Both modules offer access times between 90 and
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EDI7F332MC
2Megx32
2Megx32
EDI7F332MC
EDI7F2332MC
AM29F016
150ns
EDI7F332MC-BNC
A0-A20
9018
AM29F016
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Untitled
Abstract: No abstract text available
Text: EDI7F332MC 2 MEG x 32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 Meg x 32 respectively. The modules are based on AMDs AM29F016 - 2 Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F332MC
EDI7F332MC
EDI7F2332MC
AM29F016
150ns
EDI7F332MC-BNC:
A0-A20
DQ24-DQ31
DQ16-DQ23
DQ8-DQ15
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AM29F016
Abstract: No abstract text available
Text: EDI7F4334MC 4x4Megx32 4x4Megx32 Flash Module Block Diagrams The EDI7F4334MC is organized as a 4 x 4Meg x 32 module which is based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. EDI7F4334MC-BNC 4X4Megx32 80 pin SIMM
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EDI7F4334MC
4x4Megx32
4x4Megx32
EDI7F4334MC
AM29F016
EDI7F4334MC-BNC
150ns
A0-A20
DQ8-15
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Untitled
Abstract: No abstract text available
Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device
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Am29F016B
Am29F016
20-year
48-pin
40-pin
44-pin
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amd AM29F016
Abstract: am29f016b-75
Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device
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Am29F016B
Am29F016
amd AM29F016
am29f016b-75
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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AM29F016
Abstract: SA28 SA29 SA30 AM29F016 amd
Text: FINAL Am29F016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with
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Am29F016
16-Megabit
48-pin
44-pin
16-038-TS48-2
DA101
TSR048
16-038-TS48
SA28
SA29
SA30
AM29F016 amd
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Untitled
Abstract: No abstract text available
Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device
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Am29F016B
Am29F016
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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interrupt service in embedded system
Abstract: am29f016 AD0-AD15 AM29F010 Am186ES
Text: Breaking Through the 1 MByte Address Barrier Using the Am186ES Microcontroller The x86 architecture has come to dominate the microprocessor landscape as the most successful architecture in the world. The 186 is the 16-bit microcontroller version of the x86 architecture and it has had similar success in the 16-bit
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Am186ES
16-bit
16-bit
Am186,
Am188,
interrupt service in embedded system
am29f016
AD0-AD15
AM29F010
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Untitled
Abstract: No abstract text available
Text: WDI EDI7F4334MC 4x4Megx32 ELECTRONIC DESIGNS. INC 4x4Megx32 Flash Module Block Diagrams The EDI7F4334MC is organized as a 4 x4M eg x32 module which is based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are EDI7F4334MC-BNC mounted on an FR4 substrate.
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EDI7F4334MC
4x4Megx32
4x4Megx32
EDI7F4334MC
AM29F016
EDI7F4334MC-BNC
4X4Megx3280pin
150ns
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29F016
Abstract: No abstract text available
Text: AMENDMENT AMD£I Am29F016 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am 29F016 device in the 1996 Flash Products Data Book/Handbook, PID 11796D. This document includes replacem ent pages for the Am 29F016 data sheet,
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Am29F016
29F016
11796D.
18805C.
44-Pin
16-038-S
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Untitled
Abstract: No abstract text available
Text: EDI7F332MC ELECTRONIC DESIGNS INC 2Megx32 2Megx32 Flash Module Block Diagrams The EDI7F332MC and EDI7F2332MC are orga nized as one and two banks of 2 meg x 32 respec EDI7F332MC-BNC 2Megx3280pin SIMM tively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are
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EDI7F332MC
2Megx32
2Megx32
EDI7F332MC
EDI7F2332MC
EDI7F332MC-BNC
2Megx3280pin
AM29F016
150ns
AM29F016
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AM29F016
Abstract: Flash SIMM 80
Text: EDI7F4334MC • ELECTRONIC DESIGNS, INC. I 4x4Megx32 4x4Megx32 Flash Module Block Diagrams The EDI7F4334MC is organized as a 4 x 4 M e g x 3 2 module which is based on AMDs AM29F016 - 2Meg EDI7F4334MC-BNC 4X4Megx3280pin SIMM x 8 Flash device in TSOP packages which are
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EDI7F4334MC
4x4Megx32
4x4Megx32
EDI7F4334MC
AM29F016
150ns
EDI7F4334MC-BNC
4X4Megx3280pin
Flash SIMM 80
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AM29F016
Abstract: EDI7F332MC
Text: - à h r ^EDI EDI7F332M C ELECTRONIC DESIGNS INC | 2Megx32 2Megx32 Flash Module The EDI7F332MC and EDI7F2332MC are orga nized as one and two banks of 2 meg x 32 respec tively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are
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EDI7F332MC
2Megx32
2Megx32
EDI7F332MC
EDI7F2332MC
AM29F016
150ns
20BNC
EDI7F2332MC150BNC
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N Am29F016 Advanced Micro Devices 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — M inimizes system level power requirements ■ Com patible with JEDEC-standard com mands
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Am29F016
16-Megabit
48-pin
29F016
A0-A20
0-A20
8805A-3
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Untitled
Abstract: No abstract text available
Text: A D V A N C E IN F O R M A T IO N Am29F016 Advanced Micro Devices 16-Megabit 2,097.152 X 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, w rite, and erase ■ — Minimizes system level power requirements
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Am29F016
16-Megabit
8805A-2
A0-A20
8805A-3
25752A
D03257Q
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AM29F016
Abstract: No abstract text available
Text: FINAL A m 2 9 F 0 1 6 Advanced 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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48-pin
Am29F016
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 9 F0 1 6 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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48-pin
Am29F016
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at
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16-Megabit
48-pin
Am29F016
G25752A
0033DSb
TSR048
16-038-TS48
DA104
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