known good die AMD
Abstract: ACN2016 AMD 21551
Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 2 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology
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Am29F016B
ACN2016)
known good die AMD
ACN2016
AMD 21551
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25820
Abstract: AM29F016B Die Attach and Bonding Guidelines AM29F016B KNOWN GOOD known good die AMD AMD 21551
Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology
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Am29F016B
25820
Die Attach and Bonding Guidelines
AM29F016B KNOWN GOOD
known good die AMD
AMD 21551
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25820
Abstract: AM29F016B
Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology
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Am29F016B
25820
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amd AM29F016
Abstract: am29f016b-75
Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device
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Am29F016B
Am29F016
amd AM29F016
am29f016b-75
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Untitled
Abstract: No abstract text available
Text: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device
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Am29F016B
Am29F016
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SSO056
Abstract: TSR048 AM29F010 MBit Product Selector Guide
Text: FLASH MEMORY PRODUCT SELECTOR GUIDE 3.0 Volt-only Simultaneous Read/Write 1.8 Volt-only Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C 3.0 Volt-only Burst Mode
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Am29SL800C
Am29SL160C
Am29DL400B
Am29DL800B
Am29DL162C
Am29DL163C
Am29DL322C
Am29DL323C
Am29PL160C
Am30LV0064D
SSO056
TSR048
AM29F010
MBit
Product Selector Guide
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Am29LV* 64 boot
Abstract: Flash Memory Product Selector Guide TSOP 44-40 Package FBC048 AM29DL323C AMD AM29F016B FGA04 pl 032 AM29F010 Product Selector Guide
Text: FLASH MEMORY PRODUCT SELECTOR GUIDE 3.0 Volt-only Simultaneous Read/Write 1.8 Volt-only Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C 3.0 Volt-only Burst Mode
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Am29SL800C
Am29SL160C
Am29DL400B
Am29DL800B
Am29DL162C
Am29DL163C
Am29DL322C
Am29DL323C
Am29BL162C
Am30LV0064D
Am29LV* 64 boot
Flash Memory Product Selector Guide
TSOP 44-40 Package
FBC048
AMD AM29F016B
FGA04
pl 032
AM29F010
Product Selector Guide
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AMD AM28F010 ca
Abstract: AM29 flash 48-pin TSOP package tray tsop 48 PIN SOCKET pin identification AMD 2m flash memory Meritec Am29LV033B AM29F010 Am29F002N AM29F002
Text: Flash Memory Quick Reference Guide Summer ’98 Package Migration Low-Voltage Am29LV004 Am29LV008B Am29LV081 Am29LV116B Am29LV017B 2 Mb 4 Mb 8 Mb 16 Mb Am29LV010B Am29LV001B Am29LV020B Am29LV102B Am29LV040B Am29LV104B 1 Mb 2 Mb 4 Mb Am29LV200 Am29DL400B Am29LV400
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Am29LV004
Am29LV008B
Am29LV081
Am29LV116B
Am29LV017B
Am29LV010B
Am29LV001B
Am29LV020B
Am29LV102B
Am29LV040B
AMD AM28F010 ca
AM29 flash
48-pin TSOP package tray
tsop 48 PIN SOCKET pin identification
AMD 2m flash memory
Meritec
Am29LV033B
AM29F010
Am29F002N
AM29F002
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x-ray spansion
Abstract: 29BDD160 q405 transistor Spansion Flash AMD AM29F010B PACKAGE 29lv AM29F010B AM29F200B AM29F400B S29CD016G
Text: KGD Assembly Application Note 1. Introduction Spansion Inc. ships a number of devices in die form. These products are referred to as Known Good Die KGD . Spansion has offered KGD since 1996, with over 25 M sold since 1999. This application note is relevant for any die product not packaged and at risk of exposure to UV light, plasma clean or X-ray during
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TS044
Abstract: AMD AM29F010B PACKAGE SA20-SA23 SA14-SA11 SA26-SA23 AM29F010 AM29F032
Text: Table of Contents Product Selector Guide Am30LV0064D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Am29LV010B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Am29F160D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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Am30LV0064D
Am29LV010B
Am29F160D
Am29F010B
Am29F002B/Am29F002NB
Am29PL160C
Am29BL162C
Am29F004B
TS044
AMD AM29F010B PACKAGE
SA20-SA23
SA14-SA11
SA26-SA23
AM29F010
AM29F032
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm
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Am29F016D
Am29F016
Am29F016B
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F016D
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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e4c diode
Abstract: 29f400 AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F016D
e4c diode
29f400
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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AM29F016D-120
Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Text: Am29F016D Data Sheet Retired Product Am29F016D Cover Sheet This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
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Am29F016D
21444E7
AM29F016D-120
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
SA14
SA15
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Untitled
Abstract: No abstract text available
Text: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F016D
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Untitled
Abstract: No abstract text available
Text: Am29F016D Data Sheet Am29F016D Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
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Am29F016D
21444E9
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AM29F016D-120
Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Text: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any
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Am29F016D
21444E5
AM29F016D-120
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
SA14
SA15
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AM29F016D-120
Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Text: Am29F016D Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal data sheet improvement and are noted in the
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Am29F016D
21444E6
AM29F016D-120
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
SA14
SA15
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am29f016d-90
Abstract: No abstract text available
Text: PRELIMINARY Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology
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Am29F016D
Am29F016
Am29F016B
am29f016d-90
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Untitled
Abstract: No abstract text available
Text: AMD* Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision t DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Minimum 100,000 write/erase cycles guaranteed
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Am29F016B
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100Nm
Abstract: AMD 21551
Text: S U P P LLT .1EH] AMD£I Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory- -Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements
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Am29F016B
100Nm
AMD 21551
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Untitled
Abstract: No abstract text available
Text: SUPPLEM ENT Am29F016B Known Good Die AMDZ1 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology
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Am29F016B
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C
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Am29F016B
20-year
29F016
44-pin
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