Untitled
Abstract: No abstract text available
Text: EDI7F33512C White Electronic Designs 512Kx32 FLASH FIG.1 BLOCK DIAGRAMS The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
512Kx8
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Untitled
Abstract: No abstract text available
Text: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
512Kx8
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AM29F040
Abstract: EDI7F33512C
Text: EDI7F33512C 512Kx32 Flash 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
EDI7F33512C
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1.5528
Abstract: EDI7F33512C AM29F040 2192
Text: EDI7F33512C 512Kx32 Flash DESCRIPTION FIG. 1 The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP packages which are mounted on an FR4 substrate.
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EDI7F33512C
512Kx32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
512Kx8
1.5528
EDI7F33512C
2192
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AMD Series D flash memory card
Abstract: Am29F040 AMD marking CODE flash
Text: PCMCIA Flash Memory Card FLC Series White Electronic Designs 1 MEGABYTE through 10 MEGABYTE AMD based FEATURES The WEDC FLC series is based on AMD Am29F040 Flash memories; the FLC04 is a direct equivalent of AMD’s AmC0XXCFLKA, however it offers wider range of
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Am29F040
150ns
68-pin
64Kbyte
base50ns
AMD Series D flash memory card
AMD marking CODE flash
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AN945
Abstract: m29f040 library AM29F040B AN945 data sheet M29F040 M29W040 MC68331 ST10R163 AM29F040 i80960
Text: AN945 APPLICATION NOTE Software Drivers for M29F040 and M29W040 Flash Memories CONTENTS Introduction The M29F040 Programming Model Modifying code from Am29F040 Generating STMicroelectronics Code C Library Functions Adapting the Software for the Target System
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AN945
M29F040
M29W040
M29F040
Am29F040
M29W040,
AN945
m29f040 library
AM29F040B
AN945 data sheet
MC68331
ST10R163
i80960
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AN945
Abstract: M29F040 M29W040 MC68331 ST10R163 m29f040 library
Text: AN945 APPLICATION NOTE SOFTWARE DRIVERS for M29F040 and M29W040 FLASH MEMORIES CONTENTS Introduction The M29F040 Programming Model Modifying code from Am29F040 Generating SGS-THOMSON Code C Library Functions Adapting the Software for the Target System Limitations of the code
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AN945
M29F040
M29W040
M29F040
Am29F040
M29W040,
AN945
MC68331
ST10R163
m29f040 library
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atmel 8086
Abstract: atmel h 208 AT29C040 Am29F040 EPROM databook AMD 28SF040 SST28SF040 EPROM 40PIN JEDEC MS-026 footprint 32pin
Text: Designing In SST’s 28SF040 4 Megabit SuperFlash EEPROM Application Note 1.0 INTRODUCTION This design note describes the key benefits of SST’s 28SF040 SuperFlash memory and how it can be used in existing AMD Am29F040 and Atmel AT29C040 designs. 2.0 Benefits of SST’s 28SF040
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28SF040
28SF040
Am29F040
AT29C040
SST28SF040
atmel 8086
atmel h 208
EPROM databook AMD
EPROM 40PIN
JEDEC MS-026 footprint 32pin
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AM29F040B-120
Abstract: AM29F040B-150 AM29F040B-55 AM29F040B-70 AM29F040B-90 IN3064 CS39S
Text: Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device
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Am29F040B
Am29F040
CS39S
AM29F040B-120
AM29F040B-150
AM29F040B-55
AM29F040B-70
AM29F040B-90
IN3064
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AM29F040
Abstract: AM29F040A 17113D-7 29F040 AMD date code 29f040 AM29F040 amd
Text: FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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Am29F040
32-pin
AM29F040A
17113D-7
29F040
AMD date code 29f040
AM29F040 amd
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17113e
Abstract: Am29F040 Max 17113 29F040 amd 29f040 AMD date code 29f040
Text: FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash
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Am29F040
32-pin
17113e
Max 17113
29F040
amd 29f040
AMD date code 29f040
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Untitled
Abstract: No abstract text available
Text: Data Sheet 296054 FlashLite Wordwide Memory Card— AMD AM29F040 janwreva Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 1 MByte, based on AMD AM29F040 Flash Technology ■ Eight Equal Size Sectors of 128 KBytes Each in Wordwide Mode
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AM29F040
AM29F040
of3226-1671
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AM290F040
Abstract: F3351 512KI x8 F335-12 f33512
Text: WDÌ EDI7F33512C 512Kx32Flash ELECTRONICDESJGW S.INC. 512Kx32 Flash TheE DI7F3351 EDI7F233512 and E DI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32respectively.Themodulesarebasedon AMD’s AM29F040-512Kx8 Flash Device in TSOP EDI7F33512CSNC
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EDI7F33512C
512Kx32Flash
512Kx32
DI7F3351
EDI7F233512
DI7F433512
2x512Kx32
4x512Kx32respectively
AM29F040-512Kx8
AM290F040
F3351
512KI x8
F335-12
f33512
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367 al
Abstract: CQ31 9020 11 ak 30 a4 51b7 Amos Flash SIMM 80 AM29F040 EDI7F33512C
Text: ^EDI EDI7F33512C 512KX32 Flash ELECTRONIC DESIGNS INC 512Kx32 Flash The EDI7F33512, EDI7F233512 and EDI7F433512 are organized as 512Kx32 and 2x512Kx32 and 4x512Kx32 respectively. The modules are based on AMD's AM29F040 - 512Kx8 Flash Device in TSOP Block Diagrams
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EDI7F33512C
512KX32
EDI7F33512,
EDI7F233512
EDI7F433512
2x512Kx32
4x512Kx32
AM29F040
367 al
CQ31
9020
11 ak 30 a4
51b7
Amos
Flash SIMM 80
EDI7F33512C
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17113e
Abstract: AM29F040 amd 29f040 29F040 17113E-14
Text: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash
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Am29F040
32-pin
17113e
amd 29f040
29F040
17113E-14
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Am29F040
Abstract: No abstract text available
Text: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands
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Am29F040
32-pin
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Automatically preprograms and erases the chip
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Am29F040
32-pin
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am29f0408
Abstract: 17113e AM29F040 29F040
Text: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with singlepower-supply Flash
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Am29F040
32-pin
am29f0408
17113e
29F040
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Am29F040
Abstract: 29F040 17113
Text: CONDENSED ADVANCE INFORMATION Advanced Micro Devices Am29F040 524,288 x 8-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% write and erase - Minimizes system level power requirements Compatible with JEDEC-standard commands
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Am29F040
32-pin
29F040
7113A-5
7113A-6
A0-A18
17113
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AM29F040A
Abstract: 17113D-4 AMD date code 29f040 Am29F040
Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards
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Am29F040
32-pin
0257S2fl
0033bH3
AM29F040A
17113D-4
AMD date code 29f040
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AMD date code 29f040
Abstract: Am29F040 lora
Text: ZI FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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Am29F040
32-pin
of-127
AMD date code 29f040
lora
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Am29F040
Abstract: No abstract text available
Text: CONDENSED ADVANCE INFORMATION Am29F040 524,288 x 8-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% write and erase - Minimizes system level power requirements Compatible with JEDEC-standard commands
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Am29F040
32-pin
29F040
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29F040
Abstract: No abstract text available
Text: Am29F040 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Com patible with JEDEC-standards
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Am29F040
32-pin
DD33427
TSR032
025752fl
29F040
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Am29F040
Abstract: No abstract text available
Text: Data Sheet 124376 FlashLite Byte-W ide M em ory C a rd — A M D A M 29F040 JUNE 95 REV A Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 512 KByte, based on AMD AM29F040 Flash Technology ■ Eight Equal Size Sectors of 64 KBytes each
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29F040
AM29F040
nonvolati8-6606
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