AM26LS31SC
Abstract: AM27C512-150DC AM26LS33PC AM27C010-120DC AM26LS30PC AM29F400BT am29f040b AM27C512-90DC X9312WP AM27C64-120DC
Text: AMD Advanced Micro Devices Memory, Drivers, Receivers and Potentiometers http://www.amd.com/ Visit Advanced Micro Devices web site to learn about their latest products, obtain data sheets and literature. AMD Literature Support: 1-800-222-9323 To obtain literature, call Advanced Micro Devices Literature Support.
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AM29F010
AM29F010-45JC
AM29F010-45EC
X9312WP
X9313WP
X9511WP
X9C102S
X9C103S
X9C104S
X9C503S
AM26LS31SC
AM27C512-150DC
AM26LS33PC
AM27C010-120DC
AM26LS30PC
AM29F400BT
am29f040b
AM27C512-90DC
AM27C64-120DC
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AM29F040B date code marking information
Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Text: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U08SJ08-XX 8MB FLASH SIMM, based on AMD Am29F016B Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U08SJ08-XX is a 5.0V flash memory SIMM, composed of four CMOS 16Mbit
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AVEF29F016U08SJ08-XX
Am29F016B
AVEF29F016U08SJ08-XX
16Mbit
80-pin,
120ns
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20.000H
Abstract: 00000H AM29F010
Text: ExpressFlashTM KGD Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _
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AM29F016B-S
Abstract: No abstract text available
Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • 5.0 V +10% , single power supply operation ■ — Minimizes system level power requirements ■ Manufactured on 0.32 |jm process technology
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Am29F016B
Am29F016
Icc41°
AM29F016B-S
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C
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Am29F016B
20-year
29F016
44-pin
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AM29 FLASH
Abstract: AN1185 Lot code M29F010B M29F040B M29F002B M29F010B M29F200B M29F400B M29W008A M29W010B
Text: AN1185 APPLICATION NOTE Designing for Compatibility between ST and AMD Flash Memories CONTENTS • INTRODUCTION ■ FLASH MEMORY TECHNOLOGY COMPARISON ■ PORTABILITY ISSUES ■ DEVICE AND MANUFACTURER CODES ■ PART NUMBERS ■ EQUIVALENT PART NUMBERS ■
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AN1185
AM29 FLASH
AN1185
Lot code M29F010B
M29F040B
M29F002B
M29F010B
M29F200B
M29F400B
M29W008A
M29W010B
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100Nm
Abstract: AMD 21551
Text: S U P P LLT .1EH] AMD£I Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory- -Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements
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Am29F016B
100Nm
AMD 21551
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single pow er supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C
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Am29F016B
20-year
29F016
48-pin
40-pin
44-pin
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Untitled
Abstract: No abstract text available
Text: AMD* Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision t DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Minimum 100,000 write/erase cycles guaranteed
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Am29F016B
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AM29 FLASH
Abstract: "NOR Flash" intel retention amd nor flash LOT code stmicroelectronics AM29 AMD part numbering Lot code M29F010B M29F010B Lot code M29F040 M29F040B
Text: AN1185 APPLICATION NOTE Designing for Compatibility between ST and AMD Flash Memories CONTENTS • INTRODUCTION ■ FLASH MEMORY TECHNOLOGY COMPARISON ■ PORTABILITY ISSUES ■ DEVICE AND MANUFACTURER CODES ■ PART NUMBERS ■ EQUIVALENT PART NUMBERS ■
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AN1185
AM29 FLASH
"NOR Flash" intel retention
amd nor flash
LOT code stmicroelectronics
AM29
AMD part numbering
Lot code M29F010B
M29F010B Lot code
M29F040
M29F040B
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AM29F032B 04h
Abstract: 19945 AM29F010
Text: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash
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Am29Fxxx
Am29F010A
Am29F100
AM29F032B 04h
19945
AM29F010
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Untitled
Abstract: No abstract text available
Text: AMD A m 2 9 F 0 1 6 B 15 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology
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Am29F016
Am29F016B
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AM29F016D-120
Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Text: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F016D
AM29F016D-120
AM29F016D-150
AM29F016D-70
AM29F016D-90
SA10
SA11
SA12
SA13
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Untitled
Abstract: No abstract text available
Text: Am29F016D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F016D
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AM29F017D-120
Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F017D
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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diode e4f
Abstract: mark E4K AM29F017D-120 AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Text: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F017D
diode e4f
mark E4K
AM29F017D-120
AM29F017D-150
AM29F017D-70
AM29F017D-90
SA10
SA11
SA12
SA13
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD£I A m 2 9 F 0 1 6 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35|im process technology
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Am29F016
48-pin
40-pin
Am29F016B
TSR040â
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TSOP 14l
Abstract: am29f016b-90 A20-A11
Text: PRFUivllNAR AMD£1 A m 2 9 F 0 1 6 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35|im process technology
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Am29F016
AM29F016B
Am29F016B
TSOP 14l
am29f016b-90
A20-A11
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Untitled
Abstract: No abstract text available
Text: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29F017D
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AM29F010
Abstract: Am29F002N
Text: AMD SI P R E L I M I N A R Y ERASE AND PROGRAMMING PERFORMANCE Parameter Typ Note 1 Max (Note 2) Unit 1 8 sec 32 256 sec 7 300 US 14.4 43.2 sec Sector Erase Time Chip Erase Time Byte Programming Time Chip Programming Time (Note 3) Comments Excludes OOh programming prior to
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29F010
Am29F100
Am29F010
Am29F002N
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25820
Abstract: AM29F016B
Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology
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Am29F016B
25820
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25820
Abstract: AM29F016B Die Attach and Bonding Guidelines AM29F016B KNOWN GOOD known good die AMD AMD 21551
Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.35 µm process technology
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Am29F016B
25820
Die Attach and Bonding Guidelines
AM29F016B KNOWN GOOD
known good die AMD
AMD 21551
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known good die AMD
Abstract: ACN2016 AMD 21551
Text: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 2 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology
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Am29F016B
ACN2016)
known good die AMD
ACN2016
AMD 21551
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