68230A
Abstract: pal16v8q PAL16R8ACN 99029 PAL16V8Q-15JC4 PAL16V8Z AM993 17640 8253 amd thermal analysis on pcb
Text: 9/5/01 PKG. TYPE CD 016 PD 016 PD 016 CD 020 CD 020 CD 020 CD 020 CD 020 PD 020 PD 020 Page 1 Thermal Resistance Analysis Update LD. FRM. NUMBER 18543 405 563 461 480 480 480 18550 590 590 X PAD DIM. MILS 167 140 150 127 160 160 160 167 150 150 MSD Advanced Assembly Technology
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74015A
7713A
67711C
7714A
7411Y
4196B
AMC67401
AM7940-125
67401N
PAL16V8Z
68230A
pal16v8q
PAL16R8ACN
99029
PAL16V8Q-15JC4
PAL16V8Z
AM993
17640
8253 amd
thermal analysis on pcb
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intel 28F400
Abstract: 29f400 psop intel 28F200 amd29f400 amd 29f200 programming 29F400 PSOP 29f400 29F200 flash intel 28F400bx 29f400 datasheet 29f200
Text: E AP-615 APPLICATION NOTE Accommodating Industry Trends in Boot Code Flash Memory January 1998 Order Number: 292169-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
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AP-615
AMN32E40
29F0x0
32-PLCC
28F00xB
40-TSOP
AME32E40
32-TSOP
intel 28F400
29f400 psop
intel 28F200
amd29f400
amd 29f200
programming 29F400 PSOP
29f400
29F200 flash
intel 28F400bx 29f400
datasheet 29f200
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AM29F040
Abstract: AM29F040A 17113D-7 29F040 AMD date code 29f040 AM29F040 amd
Text: FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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Am29F040
32-pin
AM29F040A
17113D-7
29F040
AMD date code 29f040
AM29F040 amd
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FD-235HF jumper
Abstract: Senstron SQH-4154 chicony keyboard pinout chicony schematic lcd inverter ibm PSA-2054C ISA S20 teac fd-235hf gtc6r-1 teac fd 235hf
Text: ÉlanSC400 Microcontroller Evaluation Board User’s Manual Release 2.0 A D V A N C E D M I C R O D E V I C E S frt Page ii Thursday, January 29, 1998 1:34 PM Élan SC400 Microcontroller Evaluation Board User’s Manual, Release 2.0 1998 by Advanced Micro Devices, Inc.
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lanSC400
lanTMSC400
FD-235HF jumper
Senstron SQH-4154
chicony keyboard pinout
chicony
schematic lcd inverter ibm
PSA-2054C
ISA S20
teac fd-235hf
gtc6r-1
teac fd 235hf
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AM29PL320DB60R
Abstract: No abstract text available
Text: Am29PL320D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29PL320D
AM29PL320DB60R
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Untitled
Abstract: No abstract text available
Text: Am29PL320D Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29PL320D
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Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z86E73
Z86E83
Z89371
ADP-Z89371/-PL
Z8E000
ADP-Z8E001
Z8E001
Device-List
cf745 04 p
24LC211
lattice im4a3-32
CF775 MICROCHIP
29F008
im4a3-64
ks24c01
ep320ipc
ALL-11P2
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Device-List
Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z8E000
ADP-Z8E001
Z8E001
Z90231
ADP-Z90259-SD
Z90241
ADP-Z90241-SD
Device-List
CF775 MICROCHIP
24LC211
ae29F2008
im4a3-32
CNV-PLCC-MPU51
ep320ipc
cf745 04 p
ALL-11P3
29lv640
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AM29F040A
Abstract: 17113D-4 AMD date code 29f040 Am29F040
Text: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards
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Am29F040
32-pin
0257S2fl
0033bH3
AM29F040A
17113D-4
AMD date code 29f040
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AMD date code 29f040
Abstract: Am29F040 lora
Text: ZI FINAL Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards
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Am29F040
32-pin
of-127
AMD date code 29f040
lora
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A/M29F010B(45/70/90/D/365/programmer for 29F010
Abstract: 29f010 AM29F010 29F010 DIP am29f010-90 AM29F01055 amd 29F010 flash memory AM29F010-70 Am29F010-120JC M29F010
Text: Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% read, w rite, and erase — M inimizes system level power consumption Com patible with JEDEC-standard com mands
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Am29F010
32-pin
A/M29F010B(45/70/90/D/365/programmer for 29F010
29f010
29F010 DIP
am29f010-90
AM29F01055
amd 29F010 flash memory
AM29F010-70
Am29F010-120JC
M29F010
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Am29F040
Abstract: No abstract text available
Text: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands
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Am29F040
32-pin
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29f040b
Abstract: No abstract text available
Text: ?'RE ! AM DB A m 29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics H 5.0 V ± 10% for read and write operations — Minimizes system level power requirements • Manufactured on 0.35 Jim process technology
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29F040B
Am29F040
Am29F040B
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29F040
Abstract: No abstract text available
Text: Am29F040 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Com patible with JEDEC-standards
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Am29F040
32-pin
DD33427
TSR032
025752fl
29F040
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29lv800a
Abstract: No abstract text available
Text: AMDZ1 A m 29L V 116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and
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20-year
Am29LV116B
29lv800a
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29LV116
Abstract: No abstract text available
Text: AMDB A m 2 9 L V 1 1 6 B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV116B
29LV116
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Automatically preprograms and erases the chip
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Am29F040
32-pin
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17113e
Abstract: No abstract text available
Text: FINAL AMDB Am 29F040 4 M e g a b i t 5 2 4 , 2 8 8 x 8-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5. 0 V ± 1 0 % f or r e a d a n d w r i t e o p e r a t i o n s ■ — Minimizes system level power requirements
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29F040
Am29F040
17113e
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AM29F040B
Abstract: No abstract text available
Text: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology
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Am29F040B
Am29F040
twHwi-12-
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Untitled
Abstract: No abstract text available
Text: AMD if Am29LV160B 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV160B
16-Bit)
FBC048,
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Untitled
Abstract: No abstract text available
Text: AMDËI PR ELIM IN AR Y Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV116B
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21415D-11
Abstract: 29F400 code
Text: AMDZ1 Am29LV017B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS Embedded Algorithms • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV017B
20-year
21415D-11
29F400 code
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y AMDH Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV116B
Am29LVt16B
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Am29LV1608
Abstract: No abstract text available
Text: P R E LIM IN A R Y A M DC! Am29LV160B 16 Megabit 2 M X 8-B!t/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV160B
16-Bit)
Am29LV1608
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