AM29DL164CB
Abstract: F0000H-F7FFFH F8000H-FFFFFH sa37 D8000H-DFFFFH B8000H-BFFFFH 10001XXX 00000H-07FFFH 030000H-03FFFFH 11000XXX
Text: SUPPLEMENT ADVANCE INFORMATION Am29DL164C Data Sheet Supplement This supplement is for use with the Am29DL162/ Am29DL163C data sheet, publication number 21533. This document contains information on ordering part numbers, device bank division, and sector configuration. For all other specifications, refer to the data sheet.
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Am29DL164C
Am29DL162/
Am29DL163C
x8/x16
Kbyte/32
Am29DL164CB
F0000H-F7FFFH
F8000H-FFFFFH
sa37
D8000H-DFFFFH
B8000H-BFFFFH
10001XXX
00000H-07FFFH
030000H-03FFFFH
11000XXX
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32Kword
Abstract: No abstract text available
Text: Am29DL320G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29DL320G
32Kword
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Untitled
Abstract: No abstract text available
Text: Am29DL320G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29DL320G
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32Kword
Abstract: S29JL032 AM29DL320G S29JL032H S29PL032J WMF MARKING AMD K2
Text: Am29DL320G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL032H for TSOP packages and S29PL032J (for FBGA packages) supersede AM29DL320G as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL320G
S29JL032H
S29PL032J
32Kword
S29JL032
S29JL032H
S29PL032J
WMF MARKING
AMD K2
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S29JL032
Abstract: S29JL032H S29PL032J spansion marking date code
Text: Am29DL320G Data Sheet RU QHZ GHVLJQV LQYROYLQJ 7623 SDFNDJHV 6 -/+ VXSHUFHGHV $P '/* DQG LV WKH IDFWRU\UHFRPPHQGHG PLJUDWLRQ SDWK 3OHDVH UHIHU WR WKH 6 -/+ 'DWDVKHHW IRU VSHFLILFDWLRQV DQG RUGHULQJ LQIRUPDWLRQ )RU QHZ GHVLJQV LQYROYLQJ )LQHSLWFK %*$ )%*$ SDFNDJHV 6 3/- VXSHUFHGHV $P '/* DQG LV WKH
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Am29DL320G
S29JL032
S29JL032H
S29PL032J
spansion marking date code
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d323gb90v
Abstract: d323gb90 D323GT90V D323GB D323GB90P AMD K6
Text: ADVANCE INFORMATION Am29DL32xG 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL32xG
16-Bit)
256-byte
AM29DL32xD.
LAA064
d323gb90v
d323gb90
D323GT90V
D323GB
D323GB90P
AMD K6
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amd part marking
Abstract: S29JL064H S29PL064J
Text: Am29DL640D Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640D and is the
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Am29DL640D
S29JL064H
S29PL064J
amd part marking
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Untitled
Abstract: No abstract text available
Text: Am29DL320G Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29DL320G
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D323GB90VI
Abstract: AM29DL32XD DL324 PAL 0007 E amplificador S29JL032 DL322 DL323 S29JL032H S29PL032J spansion date code marking
Text: Am29DL32xG Data Sheet For new designs involving TSOP packages, S29JL032H supersedes Am29DL32xG and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL032J supersedes Am29DL32xG and is the
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Am29DL32xG
S29JL032H
S29PL032J
D323GB90VI
AM29DL32XD
DL324
PAL 0007 E amplificador
S29JL032
DL322
DL323
spansion date code marking
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d323gb90v
Abstract: AM29DL32XD DL322 DL323 DL324 Am29DL322
Text: Am29DL32xG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29DL32xG
d323gb90v
AM29DL32XD
DL322
DL323
DL324
Am29DL322
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29DL320G 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL320G
16-Bit)
256-byte
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S29JL032
Abstract: S29JL032H am29dl323 DL322 DL323 DL324 S29PL032J
Text: Am29DL32xG Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL032H for TSOP packages and S29PL032J (for FBGA packages) supersede AM29DL32xG as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL32xG
S29JL032H
S29PL032J
S29JL032
S29JL032H
am29dl323
DL322
DL323
DL324
S29PL032J
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S29JL064H
Abstract: S29PL064J
Text: Am29DL640D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factoryrecommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information.
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Am29DL640D
S29JL064H
S29PL064J
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Untitled
Abstract: No abstract text available
Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.
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Am29DL640D
16-Bit)
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Untitled
Abstract: No abstract text available
Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.
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Am29DL640D
16-Bit)
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AM29F040B date code marking information
Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Text: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _
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A9RV
Abstract: No abstract text available
Text: Am29DL32xG Data Sheet RU QHZ GHVLJQV LQYROYLQJ 7623 SDFNDJHV 6 -/+ VXSHUVHGHV $P '/[* DQG LV WKH IDFWRU\UHFRPPHQGHG PLJUDWLRQ SDWK 3OHDVH UHIHU WR WKH 6 -/+ 'DWDVKHHW IRU VSHFLILFDWLRQV DQG RUGHULQJ LQIRUPDWLRQ )RU QHZ GHVLJQV LQYROYLQJ )LQHSLWFK %*$ )%*$ SDFNDJHV 6 3/- VXSHUVHGHV $P '/[* DQG LV WKH
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Am29DL32xG
A9RV
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amd part marking
Abstract: AM29DL32XD AMD K7 data sheet D323GB9 marking code j6 marking E5 PAL 0007 E amplificador DL322 DL323 DL324
Text: ADVANCE INFORMATION Am29DL32xG 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL32xG
16-Bit)
256-byte
64-Ball
amd part marking
AM29DL32XD
AMD K7 data sheet
D323GB9
marking code j6
marking E5
PAL 0007 E amplificador
DL322
DL323
DL324
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d323gb90
Abstract: SA69-SA67 D323GB12V D323GT90V
Text: ADVANCE INFORMATION Am29DL32xG 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL32xG
16-Bit)
256-byte
48-pin
64-Ball
d323gb90
SA69-SA67
D323GB12V
D323GT90V
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AM29DL32XD
Abstract: AMD K7 data sheet PAL 0007 E amplificador DL322 DL323 DL324 AM29DL323GB-90WDI D323GB
Text: ADVANCE INFORMATION Am29DL32xG 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL32xG
16-Bit)
256-byte
48-Ball
AM29DL32XD
AMD K7 data sheet
PAL 0007 E amplificador
DL322
DL323
DL324
AM29DL323GB-90WDI
D323GB
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL640D
16-Bit)
048--48-Pin
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AM29DL32XD
Abstract: DL322 DL323 DL324
Text: Am29DL32xG Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29DL32xG
64-Ball
AM29DL32XD
DL322
DL323
DL324
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Untitled
Abstract: No abstract text available
Text: Am29DL640D Data Sheet RU QHZ GHVLJQV LQYROYLQJ 7623 SDFNDJHV 6 -/+ VXSHUVHGHV $P '/' DQG LV WKH IDFWRU\UHFRP PHQGHG PLJUDWLRQ SDWK 3OHDVH UHIHU WR WKH 6 -/+ GDWDVKHHW IRU VSHFLILFDWLRQV DQG RUGHULQJ LQIRUPDWLRQ )RU QHZ GHVLJQV LQYROYLQJ )LQHSLWFK %*$ )%*$ SDFNDJHV 6 3/- VXSHUVHGHV $P '/' DQG LV WKH
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Am29DL640D
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Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
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