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    AMP. MOSFET 800 WATT Search Results

    AMP. MOSFET 800 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    AMP. MOSFET 800 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    800 344-4539

    Abstract: P4201-ND Amp. mosfet 800 watt 1N5242 800 watt audio amplifier mouser 346-6873 EF1105-ND SR105CT-ND 12v audio amp. mosfet 50 watt P2044-ND
    Text: Bill of Materials for LM4651/52 Full Audio Bandwidth Demo Board 4.1 4/16/04 Assembly Notes: - Electrolytic capacitors should be mounted in PCB last. Symbol Value Tolerance Type RFL1, RFL2 620kΩ 1% 1/8 – 1/4 Watt RFL3, RFL4 62kΩ 1% 1/8 – 1/4 Watt


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    PDF LM4651/52 SR105CT-ND 1N5242 92N4905 500mW 16PJ097 LM833N LM4651N LM4652 58F537 800 344-4539 P4201-ND Amp. mosfet 800 watt 1N5242 800 watt audio amplifier mouser 346-6873 EF1105-ND SR105CT-ND 12v audio amp. mosfet 50 watt P2044-ND

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the


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    PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz Oct2011

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the


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    PDF RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz

    piezo print head

    Abstract: MP111FD
    Text: POWER OPERATIONAL AMPLIFIER MP111FD HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 100 VOLTS • HIGH OUTPUT CURRENT- 50 AMP PULSE OUTPUT, 15 AMP CONTINUOUS • 170 WATT DISSIPATION CAPABILITY


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    PDF MP111FD 546-APEX 500kHz 34-pin MP111FD MP111FD. MP111 piezo print head

    Amp. mosfet 500 watt

    Abstract: Richardson Amp. mosfet 800 watt RPAP100500M250 ldmos matching mosfet Richardson Electronics
    Text: RPAP100500M250 Preliminary Solid State Broadband High Power Pallet Amplifier 100 – 500 MHz, 250 Watts The RPAP100500M250 is a 250W, Class AB High Gain Linear amplifier module for the 100 - 500 MHz band. Superior performance offering high gain, efficiency, and


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    PDF RPAP100500M250 RPAP100500M250 Amp. mosfet 500 watt Richardson Amp. mosfet 800 watt ldmos matching mosfet Richardson Electronics

    Untitled

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIER MP108FD HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 200 VOLTS • HIGH OUTPUT CURRENT - 10 AMPS • 100 WATT DISSIPATION CAPABILITY • 300kHz POWER BANDWIDTH


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    PDF MP108FD 546-APEX 300kHz 34-pin MP108FD 85741or MP108

    Untitled

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIER MP108FD HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 200 VOLTS • HIGH OUTPUT CURRENT - 10 AMPS • 100 WATT DISSIPATION CAPABILITY • 300kHz POWER BANDWIDTH


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    PDF MP108FD 546-APEX 300kHz 34-pin MP108FD 85741or MP108

    Untitled

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIER MP240 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 200 VOLTS • HIGH OUTPUT CURRENT - 20 AMPS • 200 WATT DISSIPATION CAPABILITY APPLICATIONS


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    PDF MP240 546-APEX 42-pin MP240 MP230 MP240U

    MP240

    Abstract: Q11A
    Text: POWER OPERATIONAL AMPLIFIER MP240 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 200 VOLTS • HIGH OUTPUT CURRENT - 20 AMPS • 200 WATT DISSIPATION CAPABILITY APPLICATIONS


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    PDF MP240 546-APEX 42-pin MP240 5980reliable, MP240U Q11A

    100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: diagram for a 12v 250w power amplifier MP230 Q11A
    Text: POWER OPERATIONAL AMPLIFIER MP230 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 100 VOLTS • HIGH OUTPUT CURRENT - 30 AMPS • 250 WATT DISSIPATION CAPABILITY APPLICATIONS


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    PDF MP230 546-APEX 42-pin MP230 5980reliable, MP230U 100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM diagram for a 12v 250w power amplifier Q11A

    linear amplifier 470-860

    Abstract: RPAP470860M10 470-860 mhz Power amplifier w
    Text: RPAP470860M10 Preliminary Solid State Broadband High Power Pallet Amplifier 470-860 MHz – 10W The RPAP470860M10 is a 10W pallet amplifier for the 470-860 MHz band. This Class A pallet amplifier utilizes three MOSFET gain stages providing typical power gain of 39 dB at 10 Watts


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    PDF RPAP470860M10 RPAP470860M10 -54dB linear amplifier 470-860 470-860 mhz Power amplifier w

    Power MOSFET SSP

    Abstract: sspc DDC SSP SSP-21116 400 AMP 28 VDC CIRCUIT BREAKER 270 VDC CIRCUIT BREAKER SSP 645-2
    Text: Make sure the next Card you purchase has. SSP-21116 270 VDC SOLID-STATE POWER CONTROLLERS FEATURES • True I2T Protection • Isolated Control Circuitry • Status Outputs • Instant Trip Protection • Leakage Clamp • Low Power Dissipation • Solid-State Reliability


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    PDF SSP-21116 SSP-21116 1-800-DDC-5757 A5976 J-03/03-0 Power MOSFET SSP sspc DDC SSP 400 AMP 28 VDC CIRCUIT BREAKER 270 VDC CIRCUIT BREAKER SSP 645-2

    100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIER MP230 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • LOW COST • HIGH VOLTAGE - 100 VOLTS • HIGH OUTPUT CURRENT - 30 AMPS • 250 WATT DISSIPATION CAPABILITY APPLICATIONS


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    PDF MP230 546-APEX 42-pin MP230 MP230U 100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    RPAM01500M10

    Abstract: Amp. mosfet 800 watt Richardson Electronics
    Text: RPAM01500M10 Solid State Broadband High Power Module 1-525 MHz 10W The RPAM01500M10 is a 10 Watt, class “A” Linear amplifier module for the 1 - 525 MHz band. Superior performance is provided offering high gain, efficiency and power in a small module footprint using broadband


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    PDF RPAM01500M10 RPAM01500M10 Amp. mosfet 800 watt Richardson Electronics

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


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    PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    DDC SSP

    Abstract: SSP21116-010 sspc sspc ddc
    Text: SSP-21116 270 VDC SOLID-STATE POWER CONTROLLERS FEATURES DESCRIPTION The SSP-21116 Series of 270 Volt, dc, Solid-State Power Controllers SSPCs replace electromagnetic circuit breakers and solid-state relays rated from 2 through 15 amperes. These SSPCs offer


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    PDF SSP-21116 SSP-21116 1-800-DDC-5757 A5976 G-04/98-1M DDC SSP SSP21116-010 sspc sspc ddc

    laser range finder schematics

    Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
    Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals


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    PA52U

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIERS PA52 • PA52A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 80A PEAK • HIGH SLEW RATE — 50V/µs


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    PDF PA52A 546-APEX TE9493 PA52U

    Untitled

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs


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    PDF PA50A 546-APEX TE9493 5980reliable, PA50U

    Untitled

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIERS PA52 • PA52A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 80A PEAK • HIGH SLEW RATE — 50V/µs


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    PDF PA52A 546-APEX TE9493 5980reliable, PA52U

    Untitled

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIERS PA50 • PA50A M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 400 Watts • HIGH CURRENT — 40A Continuous, 100A PEAK • HIGH SLEW RATE — 50V/µs


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    PDF PA50A 546-APEX TE9493 PA50U

    SFF801R2

    Abstract: No abstract text available
    Text: SâSill PRELIMINARY SFF801R2 SOLID STATE DEVICES, INC » 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 • t f 8 AMP 800 VOLTS 1.2 Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate


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    PDF 670-SSDI SFF801R2 SFF801R2

    dual TMB 1800

    Abstract: chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET
    Text: N T E ELE CTRONICS INC SSE D bMaiSST 000Sb2S TMb BIN TE T -tt-O l DWER MOS Fi Gatato Source Cutott Voltage Volta Gate to Source Breakdown Voltage (Volt») Maximum Continuous Drain Currant (Amp*) BVosa ±20 Max >D ros(On) 12 0.18 Max case Styl« Di»g. Number


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    PDF 000Sb2S NTE2381) T0220 250pA dual TMB 1800 chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET

    LT-85

    Abstract: No abstract text available
    Text: m an A M P com pany RF MOSFET Power Transistor, 40W, 26V 500 -1000 MHz LF2840G V2.00 Features • • • • • N-Channel Enhancem ent Mode Device 40 Watts CW Com m on Source Gemini Configuration RF.SFET Structure Gold Metallization T“ ill D Absolute Maximum Ratings at 25°C


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    PDF LF2840G b7-17 LT-85