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    AMPLIFIER 084 Search Results

    AMPLIFIER 084 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    AMPLIFIER 084 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    114dBuV

    Abstract: No abstract text available
    Text: P r e lim in a r y . a link to the future Produc t In formation VX 26H / VX 26L Distribution amplifier local powered VX 29H / VX 29L Distribution amplifier remote powered WISI VALUE LINE Die cast housing Return amplifier and diplex filter on board Passive return path can be enabled by jumpers


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    transistor kp 303

    Abstract: VP15-00-3 transistor 14026
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Ω in HF band, so this IC suits to the system of HF to L band. This IC is packaged in super


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    PDF PC2776TB PC2776TB PC2776T PC2776T. transistor kp 303 VP15-00-3 transistor 14026

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D252 BGD814 CATV amplifier module Product specification Supersedes data of 2000 Apr 19 2001 Sep 07 Philips Semiconductors Product specification CATV amplifier module BGD814 FEATURES PINNING - SOT115J • Excellent linearity


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    PDF M3D252 BGD814 BGD814 OT115J SCA73 613518/03/pp12

    BGD812

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 CATV amplifier module Product specification Supersedes data of 2000 Apr 26 2001 Sep 07 Philips Semiconductors Product specification CATV amplifier module BGD812 FEATURES PINNING - SOT115J • Excellent linearity


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    PDF M3D252 BGD812 OT115J MSA319 BGD812 SCA73 613518/03/pp12

    NEC 2403

    Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
    Text: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


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    PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 NEC 2403 3181 R33 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614

    NEC 2905

    Abstract: NEC 1357 2SC4228 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC
    Text: DATA SHEET SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4228 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


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    PDF 2SC4228 2SC4228 NEC 2905 NEC 1357 2SC4228-T1 2SC4228-T2 transistor 936 sc 789 transistor 1357 transistor NEC

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


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    PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2

    Untitled

    Abstract: No abstract text available
    Text: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive


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    PDF 1000MHz 5963-2452E

    500w power amplifier circuit diagram

    Abstract: HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1
    Text: APPLICATION NOTE APT9501 By: Kenneth Dierberger Bobby McDonald Lee B. Max A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Presented at RF EXPO WEST 1995 1 A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Kenneth Dierberger Applications Engineering Manager


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    PDF APT9501 400Watt, 56MHz 100VDC F-33700 500w power amplifier circuit diagram HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1

    HF power amplifier blf177

    Abstract: blf177 108 amplifier NC08703 BLF177 philips ferroxcube 4c6 philips toroid 4c6 MGM404 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core philips toroidal transformer
    Text: APPLICATION NOTE A wideband linear power amplifier 1.6 − 28 MHz for 300 W PEP with 2 MOS transistors BLF177 NCO8703 Philips Semiconductors A wideband linear power amplifier (1.6 − 28 MHz) for 300 W PEP with 2 MOS transistors BLF177 CONTENTS 1 SUMMARY


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    PDF BLF177 NCO8703 SCA57 HF power amplifier blf177 blf177 108 amplifier NC08703 BLF177 philips ferroxcube 4c6 philips toroid 4c6 MGM404 Philips Components, Soft Ferrites Data Handbook M ferroxcube 4C6 toroid core philips toroidal transformer

    Untitled

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1012 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1012 Series is a wideband, general-purpose thin-film bipolar RF amplifier using resistive feedback and active bias for


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    11305-3

    Abstract: 180 balun
    Text: AH11 The Communications Edge Advanced Product Information High Dynamic Range Amplifier Product Features • 250-3000 MHz Bandwidth • 44 dBm Output IP3 in a Balanced • • • • • • • Product Description The AH11 is a high power linear amplifier


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    PDF 1-800-WJ1-4401 11305-3 180 balun

    Untitled

    Abstract: No abstract text available
    Text: CCD Signal Processors with Precision Timing Generator AD9891/AD9895 a FEATURES AD9891: 10-Bit 20 MHz Version AD9895: 12-Bit 30 MHz Version Correlated Double Sampler CDS 4 ؎6 dB Pixel Gain Amplifier ( PxGA ) 2 dB to 36 dB 10-Bit Variable Gain Amplifier (VGA)


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    PDF AD9891/AD9895 AD9891: 10-Bit AD9895: 12-Bit AD9891) AD9895)

    TL061

    Abstract: No abstract text available
    Text: THE BIFET DESIGN MANUAL By Peter F. Nicholson Senior Applications Engineer Applications Lab., Bedford. CONTENTS 1. INTRODUCTION 2. W H A T IS A BIFET? 3. AMPLIFICATION CIRCUITS 3.1 Instrumentation Amplifier 3.1.1 Simple Differential Amplifier 3.1.2 Two Op Amp Instrumentation Amplifier


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    PDF TL111, TL311, TL311A TL061

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


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    PDF 2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS ¿¿PC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ES C R IP TIO N The /¿PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


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    PDF uPC2776TB PC2776TB /iPC2776T /iPC2776TB PC2776T.

    transistor NEC D 822 P

    Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    PDF 2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624

    transistor NEC D 822 P

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    PDF 2SC4228 2SC4228 transistor NEC D 822 P

    transistor NEC D 587

    Abstract: 3181 R33 transistor c 3181
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


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    PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 transistor NEC D 587 3181 R33 transistor c 3181

    A 564 transistor

    Abstract: 3181 R33 transistor A 564
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


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    PDF 2SC4227 2SC4227 SC-70 A 564 transistor 3181 R33 transistor A 564

    TRANSISTOR BO 345

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


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    PDF UPC2776TB PC2776TB uPC2776TB uPC2776T PC2776T. WS60-00-1 C10535E) TRANSISTOR BO 345

    Untitled

    Abstract: No abstract text available
    Text: Thal LETT mL'HMHEW PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC/PPA 544 Series Features Description Applications The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure


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    PDF PP-38

    Untitled

    Abstract: No abstract text available
    Text: Stanford Microdevices Product Description SNA-686 Stanford Microdevices’ SNA-686 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 11dB of gain and +19dBm of P1dB when biased at 80mA and 5.9V.


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    PDF SNA-686 19dBm SNA-600) SNA-686 100mA

    LM1208

    Abstract: crt monitor block diagram differential pair cascode differential pair cascode darlington THR9 TRANSISTOR C 6090 LM1208N
    Text: January 1994 LM1208 130 MHz RGB Video Amplifier System with Blanking General Description The LM 1208 is a very high frequency video amplifier system intended for use in high resolution RGB monitor applica­ tions. In addition to the three matched video amplifiers, the


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    PDF LM1208 LM1208 Cep-01451, 0Qfifiti24 crt monitor block diagram differential pair cascode differential pair cascode darlington THR9 TRANSISTOR C 6090 LM1208N