Untitled
Abstract: No abstract text available
Text: SPA-100-32-003-SMA DATA SHEET 500 MHz to 10 GHz, Broadband Amplifier with 25 dBm, 32 dB Gain and SMA SPA-100-32-003-SMA is a broadband GaAs PHEMT MMIC-based 300 mW coaxial low noise amplifier, operating in the 0.5 to 10 GHz frequency range. The amplifier offers 32 dBm of P1dB and 32 dB small signal gain, with the excellent gain
|
Original
|
SPA-100-32-003-SMA
SPA-100-32-003-SMA
12Volts,
375mA)
-broadband-amplifier-spa-100-32-003-sma-p
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SLNA-030-32-30-SMA DATA SHEET 2.5 dB NF Low Noise Amplifier Operating From 0.009 MHz to 3 GHz with 32 dB Gain, 16 dBm P1dB and SMA SLNA-030-32-30-SMA is a wideband low noise RF coaxial amplifier operating in the 9 kHz to 3 GHz frequency range. The amplifier offers 2.5 dB noise figure,
|
Original
|
SLNA-030-32-30-SMA
SLNA-030-32-30-SMA
noise-amplifier-32db-slna-030-32-30-sma-p
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 25 dBm P1dB, 500 MHz to 10 GHz, Medium Power Broadband Amplifier, 32 dB Gain, 33 dBm IP3, 3 dB NF, SMA TECHNICAL DATA SHEET PE15A3005 PE15A3005 is a broadband GaAs PHEMT MMIC-based 300 mW coaxial low noise amplifier, operating in the 0.5 to 10 GHz frequency range. The amplifier offers 32 dBm of P1dB and 32 dB small signal gain, with the excellent gain flatness of ±1 dB,
|
Original
|
PE15A3005
PE15A3005
amplifier-32-db-gain-3-db-sma-pe15a3005-p
|
PDF
|
HMC268LM1
Abstract: No abstract text available
Text: HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz FEBRUARY 2001 Features General Description SMT mmWAVE PACKAGE The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier LNA in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1
|
Original
|
HMC268LM1
HMC268LM1
HMC268=
|
PDF
|
HMC261LM1
Abstract: No abstract text available
Text: HMC261LM1 MICROWAVE CORPORATION SMT DISTRIBUTED GaAs MMIC AMPLIFIER 20 - 32 GHz V01.0900 FEBRUARY 2001 AMPLIFIERS 1 Features General Description SMT mmWAVE PACKAGE The HMC261LM1 is a GaAs MMIC distributed amplifier in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true
|
Original
|
HMC261LM1
HMC261LM1
|
PDF
|
GaN amplifier
Abstract: Aeroflex GaN power amplifier PA001040-32
Text: Broadband Standard Product PA001040-32 GaN High Efficiency Driver Amplifier Broadband Power 100MHz to 4GHz February 9, 2009 www.aeroflex.com/bband DESCRIPTION FEATURES The PA001040-32 is a broadband high efficiency driver amplifier in a compact package and is ideal for use as a stable gain block, IF
|
Original
|
PA001040-32
100MHz
32dBm
SCD10045
GaN amplifier
Aeroflex GaN power amplifier
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT Features AMPIN 1 GND 2 GND CLK 29 DATA 30 LE GND 31 GND GND 32 AMPOUT GND Package: MCM, 32-Pin, 5.2mm x 5.2mm
|
Original
|
RDA1005L
RDA1005LDigital
50MHz
4000MHz,
32-Pin,
4000MHz
38dBm/20dBm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Subsystems & Accessories 32 x 64 Matrix Features o o o o o o 32 input fan-out to 64 outputs Frequency Band: 3.4-4.2 GHz 50 Ohm impedance SMA Connectors GaAs MMIC Switching design. RS422 control 2way div/ amplifier In 1 - 16 64 cables SP2T Output 1 16 x 32
|
Original
|
RS422
|
PDF
|
Untitled
Abstract: No abstract text available
Text: y2 k n ew ! HMC268LM1 MICROWAVE CORPORATION SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz JUNE 2000 Features General Description SMT mmWAVE PACKAGE The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier LNA in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1
|
Original
|
HMC268LM1
HMC268LM1
|
PDF
|
HMC143
Abstract: HMC203 HMC258 HMC264 HMC265 HMC281
Text: HMC281 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz FEBRUARY 2001 V02.0500 Features General Description EXCELLENT NOISE FIGURE: 2.5 dB The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 18 to 32 GHz. The chip can
|
Original
|
HMC281
HMC281
HMC143
HMC203
HMC258
HMC264
HMC265
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC281 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz FEBRUARY 2000 V01.0300 Features General Description EXCELLENT NOISE FIGURE: 2.5 dB The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 18 to 32 GHz. The chip can
|
Original
|
HMC281
HMC281
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SmartStep Subsystems 32 x 64 Matrix Features o o o o o o 32 input fan-out to 64 outputs Frequency Band: 3.4-4.2 GHz 50 Ohm impedance SMA Connectors GaAs MMIC Switching design. RS422 control 2way div/ amplifier SP2T In 1 - 16 64 cables Output 1 16 x 32 Fan Out
|
Original
|
RS422
|
PDF
|
Untitled
Abstract: No abstract text available
Text: '9 9 n ew ! HMC281 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER 18 - 32 GHz SEPTEMBER 1999 Features General Description EXCELLENT NOISE FIGURE: 2.5 dB The HMC281 chip is a three stage GaAs MMIC Low Noise Amplifier LNA which covers the frequency range of 18 to 32 GHz. The chip can
|
Original
|
HMC281
HMC281
HMC143,
HMC203,
HMC258,
HMC264,
HMC265
|
PDF
|
15 watt power amplifier " 15 GHz"
Abstract: HMMC-5032 HMMC-5040 HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram Die Attach and Bonding Guidelines
Text: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power
|
Original
|
HMMC-5032
HMMC-5032
HMMC-5040
HMMC-5618
5966-4572E
5988-2710EN
15 watt power amplifier " 15 GHz"
HMMC-5040
HMMC-5618
GaAs MMIC ESD, Die Attach and Bonding Guidelines
long range gold detector circuit diagram
Die Attach and Bonding Guidelines
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TAT3814 5-300 MHz Variable Gain Return Path Amplifier Applications Return Path Amplifier System Amplifier Line Amplifier DOCSIS Return Path VGA Bonded Channel Cable Modem Return Path 6x6 mm 40 Pin leadless SMT Package General Description 31 V3ADJ 32 GND 33 GND
|
Original
|
TAT3814
40dBm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TAT3814 5-300 MHz Variable Gain Return Path Amplifier Applications Return Path Amplifier System Amplifier Line Amplifier DOCSIS Return Path VGA Bonded Channel Cable Modem Return Path 6x6 mm 40 Pin leadless SMT Package General Description 31 V3ADJ 32 GND 33 GND
|
Original
|
TAT3814
40dBm
TAT3814
TAT3814-PCB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2.5 dB NF, 16 dBm P1dB, 0.009 MHz to 3 GHz, Low Noise Amplifier, 32 dB Gain, SMA TECHNICAL DATA SHEET PE15A1007 PE15A1007 is a wideband low noise RF coaxial amplifier operating in the 9 kHz to 3 GHz frequency range. The amplifier offers 2.5 dB typical noise figure, 16 dBm of P1dB and high 32 dB minimum small signal gain with gain flatness of ±1.5dB maximum.
|
Original
|
PE15A1007
PE15A1007
oise-amplifier-32-db-gain-sma-pe15a1007-p
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2.5 dB NF, 16 dBm P1dB, 0.009 MHz to 3 GHz, Low Noise Amplifier, 32 dB Gain, SMA TECHNICAL DATA SHEET PE15A1007 PE15A1007 is a wideband low noise RF coaxial amplifier operating in the 9 kHz to 3 GHz frequency range. The amplifier offers 2.5 dB noise figure, 16 dBm of P1dB and high 32 dB minimum small signal gain with gain flatness of ±1.5dB maximum. This
|
Original
|
PE15A1007
PE15A1007
oise-amplifier-32-db-gain-sma-pe15a1007-p
|
PDF
|
HMC414MS8G
Abstract: No abstract text available
Text: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE
|
Original
|
HMC414MS8G
HMC414MS8G
|
PDF
|
HMC414MS8G
Abstract: No abstract text available
Text: HMC414MS8G v01.1201 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 1 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE
|
Original
|
HMC414MS8G
HMC414MS8G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HMC414MS8G v02.1202 MICROWAVE CORPORATION GaAs InGaP HBT MMIC POWER AMPLIFIER, 2.2 - 2.8 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for use as a power amplifier for 2.2 - 2.7 GHz applications: Gain: 20 dB • BLUETOOTH 32% PAE
|
Original
|
HMC414MS8G
HMC414MS8G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MAAM-011139 Driver Amplifier 27.5 - 33.4 GHz Rev. V2 VG1 VD1 VG2 VD2 N/C • 3 Stage Driver Amplifier for 28/32 GHz Bands • 21 dB Gain • 32 dBm Output Third Order Intercept OIP3 • 20 dBm Output P1dB • Variable Gain with Adjustable Bias • Lead-Free 4 mm 24 Lead PQFN Package
|
Original
|
MAAM-011139
MAAM-011139
24-lead
S2083
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TDA7050TD Linear ICs Dual-Channel Audio Power/Output Amplifier status Outp Pwr Min.140m @R load (Ohms)32 Upper 3dB Frequency (Hz) AV (dB) Min.32Â Input Resistance Min. (Ohms)1.0M THD Max. (%) Quies. Pwr (W) Nom. Supp (V)3.0 Minimum Operating Temp (øC)0
|
Original
|
TDA7050TD
Code8-1198
NumberLN00801198
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TDA7050TN Linear ICs Dual-Channel Audio Power/Output Amplifier status Outp Pwr Min.140m @R load (Ohms)32 Upper 3dB Frequency (Hz) AV (dB) Min.32Â Input Resistance Min. (Ohms)1.0M THD Max. (%) Quies. Pwr (W) Nom. Supp (V)3.0 Minimum Operating Temp (øC)0
|
Original
|
TDA7050TN
Code8-1198
NumberLN00801198
|
PDF
|
