smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
|
Original
|
MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING SOT-523
|
Original
|
MMBT2222A
500mA.
OT-523
MMBT2222AL
MMBT2222A-AN3-R
MMBT2222AL-AN3-R
QW-R221-014
|
PDF
|
5252 F ic
Abstract: BFQ 540 application IC 7560 transistor BFQ 263 5252 F 1009
Text: BFQ 65 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65
|
Original
|
D-74025
5252 F ic
BFQ 540 application
IC 7560
transistor BFQ 263
5252 F 1009
|
PDF
|
MBC13720
Abstract: MBC13720T1 low noise amplifier 0947
Text: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking
|
Original
|
MBC13720/D
MBC13720
OT-363)
MBC13720T1
OT-363
MBC13720
MBC13720T1
low noise amplifier 0947
|
PDF
|
UTC 225
Abstract: No abstract text available
Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE
|
Original
|
MMBT2222A
500mA.
OT-23
QW-R206-019
UTC 225
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value
|
Original
|
BSR18B
OT-23
BSR18B
|
PDF
|
BFR90A
Abstract: No abstract text available
Text: BFR90A Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case TO 50
|
Original
|
BFR90A
BFR90A
D-74025
17-Apr-96
|
PDF
|
BFR91A
Abstract: Transistor BFR 91 Transistor BFR 90 application BFR91A transistor RF S-parameters
Text: BFR 91 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91A Marking Plastic case XTO 50
|
Original
|
BFR91A
D-74025
Transistor BFR 91
Transistor BFR 90 application
BFR91A transistor
RF S-parameters
|
PDF
|
BFR 970
Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50
|
Original
|
BFR96TS
D-74025
BFR 970
Transistor BFR 96
Bfr 910
Transistor BFR 90 application
Transistor BFR 559
|
PDF
|
BFR96
Abstract: BFR96T
Text: BFR96T Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 X BFR96T Marking: BFR96T Plastic case TO 50
|
Original
|
BFR96T
BFR96T
D-74025
17-Apr-96
BFR96
|
PDF
|
STC945
Abstract: STC733 "Small Signal Amplifier" 10K1 transistor stc945
Text: STC733 PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with STC945 Ordering Information Type NO. Marking
|
Original
|
STC733
STC945
KST-9074-000
-100mA,
-10mA
STC945
STC733
"Small Signal Amplifier"
10K1
transistor stc945
|
PDF
|
Transistor BFR 90 application
Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811
Text: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50
|
Original
|
BFR90A
D-74025
Transistor BFR 90 application
Transistor BFR 35
Transistor BFR 90
693 071 010 811
|
PDF
|
BF775
Abstract: No abstract text available
Text: BF775 Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency 1 2 3 94 9280 BF775 Marking: 775
|
Original
|
BF775
BF775
D-74025
15-Apr-96
|
PDF
|
BFR92R
Abstract: BFR92 transistor bfr92
Text: BFR92/BFR92R Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1 Plastic case SOT 23
|
Original
|
BFR92/BFR92R
BFR92
BFR92R
D-74025
17-Apr-96
transistor bfr92
|
PDF
|
|
|
Transistor BFR 30
Abstract: silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 BFR93 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103
Text: BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1
|
Original
|
BFR93
BFR93R
D-74025
Transistor BFR 30
silicon npn planar rf transistor sot 143
zo 103 ma
BFR 67
bfr 705
BFR 30 transistor
Transistor BFR 14
Transistor BFR 35
ZO 103
|
PDF
|
LMBT6428LT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G
|
Original
|
LMBT6428LT1G
LMBT6429LT1G
10000/Tape
LMBT6429LT3G
3000/Tape
LMBT6428LT3G
LMBT6428LT1G
|
PDF
|
TA4000F
Abstract: uhf linear amplifier
Text: TA4000F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4000F VHF~UHF Wide Band Amplifier Applications Features Band width : 700 MHz min @3dB down Low noise: 4dB (typ.) @f = 400 MHz Small package Pin Assignment (top view) Marking Weight: 0.014 g (typ.)
|
Original
|
TA4000F
000707EBA1
TA4000F
uhf linear amplifier
|
PDF
|
m1l transistor
Abstract: m1l SOT-23 M1L marking M1L3 LMBT6428LT1G SOT-23 MARKING D LMBT6429LT3G marking m1l marking M1L sot23 NPN/m1l transistor
Text: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G
|
Original
|
LMBT6428LT1G
LMBT6429LT1G
10000/Tape
LMBT6429LT3G
3000/Tape
LMBT6428LT3G
m1l transistor
m1l SOT-23
M1L marking
M1L3
LMBT6428LT1G
SOT-23 MARKING D
LMBT6429LT3G
marking m1l
marking M1L sot23
NPN/m1l transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z We declare that the material of product compliance with RoHS requirements. LMBTA13LT1G LMBTA14LT1G S-LMBTA13LT1G S-LMBTA14LT1G ORDERING INFORMATION Device Marking LMBTA13LT1G S-LMBTA13LT1G LMBTA14LT1G
|
Original
|
LMBTA13LT1G
LMBTA14LT1G
S-LMBTA13LT1G
S-LMBTA14LT1G
LMBTA13LT3G
S-LMBTA13LT3G
|
PDF
|
Marking code mps
Abstract: No abstract text available
Text: NPN MPS8098, MPS8099*, (PNP) MPS8598, MPS8599* *Preferred Device Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com MAXIMUM RATINGS Rating MARKING DIAGRAM Symbol Collector −Emitter Voltage MPS8098, MPS8598 MPS8099, MPS8599
|
Original
|
MPS8098,
MPS8099*
MPS8598,
MPS8599*
MPS8598
MPS8099,
MPS8599
Marking code mps
|
PDF
|
2N3683
Abstract: 2N6385 shockley diode 2N6383 2N6384
Text: 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER
|
Original
|
2N6383
2N6384
2N6385
2N3683
2N6385
shockley diode
2N6383
2N6384
|
PDF
|
LMBTA14LT1G
Abstract: LMBTA13LT1G LMBTA14 50K MARKING SOT23
Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z We declare that the material of product compliance with RoHS requirements. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel
|
Original
|
LMBTA13LT1G
LMBTA14LT1G
LMBTA13LT3G
3000/Tape
LMBTA14LT3G
10000/Tape
LMBTA14LT1G
LMBTA13LT1G
LMBTA14
50K MARKING SOT23
|
PDF
|
BFR92R
Abstract: sot 23 transistor 70.2 MAR 641 TRANSISTOR
Text: Temic BFR92/BFR92R Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR92 Marking: PI Plastic case SOT 23
|
OCR Scan
|
BFR92/BFR92R
BFR92
BFR92R
26-Mar-97
sot 23 transistor 70.2
MAR 641 TRANSISTOR
|
PDF
|
MAR 618 transistor
Abstract: MAR 641 TRANSISTOR bfr96ts MAR 527 transistor L 0403 817
Text: Temic BFR96TS Semiconductor i Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96TS Marking: BFR96TS Plastic case ~ TO 50
|
OCR Scan
|
BFR96TS
BFR96TS
26-Mar-97
MAR 618 transistor
MAR 641 TRANSISTOR
MAR 527 transistor
L 0403 817
|
PDF
|
