SA58602
Abstract: SA58602D
Text: INTEGRATED CIRCUITS SA58602 High precision operational amplifier Product data Supersedes data of 2001 Oct 03 Philips Semiconductors 2002 Nov 13 Philips Semiconductors Product data High precision operational amplifier SA58602 GENERAL DESCRIPTION The SA58602 is a low voltage, high precision dual operational
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SA58602
SA58602
SA58602D
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SA58602
Abstract: SA58602D
Text: INTEGRATED CIRCUITS SA58602 High precision operational amplifier Product data Supersedes data of 2002 Nov 13 Philips Semiconductors 2003 Oct 15 Philips Semiconductors Product data High precision operational amplifier SA58602 GENERAL DESCRIPTION The SA58602 is a low voltage, high precision dual operational
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SA58602
SA58602
SA58602D
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA58780 Sense current amplifier with selectable gain Product data Supersedes data of 2001 Oct 03 Philips Semiconductors 2002 Dec 10 Philips Semiconductors Product data Sense current amplifier with selectable gain SA58780 GENERAL DESCRIPTION
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SA58780
SA58780
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smd transistor marking X7
Abstract: MARKING CODE SMD IC sot23-5 smd code marking sot23-5 bo SA57000-25D-G TRANSISTOR AO SMD MARKING Philips sot 23-5 package marking SA57000-28D-G TRANSISTOR SMD MARKING CODE QA
Text: INTEGRATED CIRCUITS SA57000-XX CapFREE 150 mA, low-noise, low dropout regulator with thermal protection Product data Supersedes data of 2001 Oct 16 Philips Semiconductors 2003 Apr 01 Philips Semiconductors Product data CapFREE 150 mA, low-noise, low dropout regulator
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SA57000-XX
SA57000
OT23-5
05-Mar-03)
smd transistor marking X7
MARKING CODE SMD IC sot23-5
smd code marking sot23-5 bo
SA57000-25D-G
TRANSISTOR AO SMD MARKING
Philips sot 23-5 package marking
SA57000-28D-G
TRANSISTOR SMD MARKING CODE QA
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EE19 cooper
Abstract: TSF-7070 2n3904 sot23 philips EE19 type bobbin CTX22 EE19 bobbin marking S3 amplifier MUR160 SA58605 SA58605D
Text: INTEGRATED CIRCUITS SA58605 Dual operational amplifier and 2.5 V shunt regulator Product data Supersedes data of 2002 Mar 25 Philips Semiconductors 2003 Nov 12 Philips Semiconductors Product data Dual operational amplifier and 2.5 V shunt regulator DESCRIPTION
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SA58605
SA58605
EE19 cooper
TSF-7070
2n3904 sot23 philips
EE19 type bobbin
CTX22
EE19 bobbin
marking S3 amplifier
MUR160
SA58605D
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2482 ZENER diode DATA
Abstract: SA58601 SA58601D SA58604 SA58604D philips amp 0050 Instrumentation Amplifiers philips
Text: INTEGRATED CIRCUITS SA58601; SA58604 Dual and quad operational amplifiers with shunt regulator Product data Supersedes data of 2001 Oct 03 Philips Semiconductors 2002 Nov 08 Philips Semiconductors Product data Dual and quad operational amplifiers with shunt regulator
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SA58601;
SA58604
SA58601
SA58604
2482 ZENER diode DATA
SA58601D
SA58604D
philips amp 0050
Instrumentation Amplifiers philips
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SA57000-25D
Abstract: SA57000-36D SA57000-25UK SA57000-28D SA57000-28UK SA57000-29UK SA57000-XX ablx
Text: INTEGRATED CIRCUITS SA57000-XX CapFREE 150 mA, low-noise, low dropout regulator with thermal protection Product data Supersedes data of 2003 Apr 30 Philips Semiconductors 2003 Jul 30 Philips Semiconductors Product data CapFREE 150 mA, low-noise, low dropout regulator
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SA57000-XX
SA57000
OT23-5
SA57000-25D
SA57000-36D
SA57000-25UK
SA57000-28D
SA57000-28UK
SA57000-29UK
SA57000-XX
ablx
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Untitled
Abstract: No abstract text available
Text: DAC2900 DAC 290 www.ti.com SBAS166C – JUNE 2001 – REVISED SEPTEMBER 2008 Dual, 10-Bit, 125MSPS DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● COMMUNICATIONS: Base Stations, WLL, WLAN Baseband I/Q Modulation 125MSPS UPDATE RATE
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DAC2900
SBAS166C
10-Bit,
125MSPS
125MSPS
20MHz
310mW
DAC2900
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RAYTHEON
Abstract: RMPA0951-102 RO4003 CMDA
Text: RMPA0951-102 3V Cellular CDMA Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA0951-102 is a dual mode, small-outline power amplifier module PAM for Cellular CDMA personal communication system applications. The PA is internally-matched to 50 ohms and DC blocked which minimizes the
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RMPA0951-102
RMPA0951-102
50-ohm
RAYTHEON
RO4003
CMDA
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IRBc
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA57017-XX CapFREE 150 mA, low-noise, low-dropout regulator with thermal protection Product data Supersedes data of 2003 Aug 13 Philips Semiconductors 2003 Aug 27 Philips Semiconductors Product data CapFREE 150 mA, low-noise, low-dropout regulator
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SA57017-XX
SA57017-XX
SA57017
OT23-5
IRBc
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Untitled
Abstract: No abstract text available
Text: DAC2900 DAC 290 www.ti.com SBAS166C – JUNE 2001 – REVISED SEPTEMBER 2008 Dual, 10-Bit, 125MSPS DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● COMMUNICATIONS: Base Stations, WLL, WLAN Baseband I/Q Modulation 125MSPS UPDATE RATE
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DAC2900
SBAS166C
10-Bit,
125MSPS
20MHz
310mW
DAC2900
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS SA58780 Sense current amplifier with selectable gain Product data Supersedes data of 2001 Oct 03 Philips Semiconductors 2002 Dec 10 Philips Semiconductors Product data Sense current amplifier with selectable gain SA58780 GENERAL DESCRIPTION
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SA58780
SA58780
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TELEDYNE 1339
Abstract: 1339 teledyne connector 1 928 404 200 613 teledyne
Text: Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 509 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 509 Series is a wideband single stage high power bipolar RF amplifier using thin-film construction with two transistors in
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PP-38
TELEDYNE 1339
1339 teledyne
connector 1 928 404 200
613 teledyne
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Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 509 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz The 509 Series is a wideband single stage high power bipolar RF amplifier using thin-film construction with two transistors in
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PP-38
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Untitled
Abstract: No abstract text available
Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE O U TLIN E DETAILS ALL DIM EN SION S IN nun Marking CSA1162Y-3E CSA1162GR G -3F _3.0 2.8 0.14 Û.09 0.48 o 3b Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02
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CSA1162
CSA1162Y-3E
CSA1162GR
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MAV-4
Abstract: MAV2 MAV4 MAV1 MAR-6
Text: M onolithic A mplifiers boo B roadband DC to 2 GHz up to +12.5 dBm output ow m GAIN, dB Typical at MHz . MHz note 1 Typ. Output ir^ut MODEL NO. □ J J □ MAXIMUM r y w i i R , v n M ft K % too 500 1000 2000 — 13.0 8.5 8.0 7.0 _1 MAR-6 J MAR-7 J MAR-8
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DC-2000
DC-1000
BBB123
MAV-11
MAV-4
MAV2
MAV4
MAV1
MAR-6
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LBE1004R
Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
Text: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.
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LBE/LCE1004R
LBE/LCE2003S
LBE/LCE2009S)
LBE/LCE1010R
LBE1004R
LBE1010R
LCE1004R
LCE1010R
IEC134)
1004R
amplifier marking _1
TDA 5331
amplifier marking code D
auo 002
marking S3 amplifier
Marking LBE
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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Untitled
Abstract: No abstract text available
Text: SIEMENS Power-Factor Controller PFC IC for High Power Factor and Active Harmonie Filter TDA 4862 Advanced Information Bipolar IC Features 1C for sinusoidal line-current consumption Power factor approaching 1 Controls boost converter as an active harmonics filter
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Q67000-A8368-A205
35x45Â
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5k1a
Abstract: No abstract text available
Text: 2SA1483 SILICON PNP EPITAXIAL TYPE Unit in mm o HIGH FREQUENCY AMPLIFIER APPLICATIONS 4.6 MAX. 1.7MAX. ° VIDEO AMPLIFIER APPLICATIONS 0.4 10.05 _ o HIGH SPEED SWITCHING APPLICATIONS * < • High Transition Frequency: N fx=200MHz Typ. • Low Collector Output Capacitance:
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2SA1483
2SC3803
200MHz
Diss10V,
-10mA
5k1a
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d marking code dpak transistor
Abstract: 147 B transistor
Text: Central" CJD122 NPN CJD127 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL S EM IC O N D U C TO R CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching
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CJD122
CJD127
CJD122,
26-September
d marking code dpak transistor
147 B transistor
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Untitled
Abstract: No abstract text available
Text: TECHNOLOGY u n Ultra High Speed O perational Amplifier DCSCMPTIOn KflTUfteS • Gain Bandwidth Product, Av = +1 ■ Slew Rate ■ Low Cost ■ Output Current ■ Settling Time ■ Differential Gain Error ■ Differential Phase Error ■ High Open Loop Gain
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90MHz
110ns
LT1191
20MHz
LT1191
LU191
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Untitled
Abstract: No abstract text available
Text: urm TECHNOLOGY LT1013/LT1014 Quad Precision Op Amp LT1014 Dual Precision Op Amp (LT1013) FCATURCS D C S C R IP TIO n • Single Supply Operation Input Voltage Range Extends to Ground Output Swings to Ground while Sinking Current ■ Pin Compatible to 1458 and 324 with Precision Specs
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LT1013/LT1014
LT1014)
LT1013)
LT1014
14-pin
LM324/LM348/0P-11
150/A/
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cd551
Abstract: LT1191 LT1191C LT1191CJ8 LT1191CN8 LT1191CS8 LT1191M LT1191MJ8
Text: _111191 n n TECH NO LO G Y Ultra High S p e e d O p e ra tio n a l A m p lifie r D C S C M P TIO n K flT U fte S • Gain Bandwidth Product, Av = +1 ■ Slew Rate ■ Low Cost ■ Output Current ■ Settling Time ■ Differential Gain Error
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90MHz
110ns
LT1191
LT1191
10kQfor
300Qand
cd551
LT1191C
LT1191CJ8
LT1191CN8
LT1191CS8
LT1191M
LT1191MJ8
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