MGH80
Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
Text: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE
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BLV909
AN98020
BLV909.
SCA57
MGH80
TRANSISTOR SMD catalog
AN98017
AN98020
AN98026
SMD TRANSISTOR
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k 2996
Abstract: LT505 PLID resistor 240 3y3 transistor
Text: Low Current, Peak Limiting Class A Amplifier LT505 DATA SHEET FEATURES DESCRIPTION • amplifier current typically 53 µA The LT505 is a low current, low voltage monolithic integrated circuit amplifier. It is comprised of an operational amplifier driving a single transistor class A output stage with open
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LT505
C-101,
k 2996
PLID
resistor 240
3y3 transistor
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Untitled
Abstract: No abstract text available
Text: Low Current, Peak Limiting Class A Amplifier LT505 DATA SHEET FEATURES DESCRIPTION • amplifier current typically 53 µA The LT505 is a low current, low voltage monolithic integrated circuit amplifier. It is comprised of an operational amplifier driving a single transistor class A output stage with open
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LT505
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G3JL
Abstract: GBAD sot 23 r2a
Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS Type Function Marking IC VCEO VEBO mA max V V BC817-25 * amplifier G6A-C 800 45 5 BC847B * amplifier G1E-G 100 45 6 BC848B * amplifier G1J-L 100 30 5 BCW31 AF/HF amplifier GD1 100 32 5 BCW32 AF/HF amplifier
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BC817-25
BC847B
BC848B
BCW31
BCW32
BCW33
BCW60
BCW65
BCW71
BCW72
G3JL
GBAD
sot 23 r2a
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SFT-9100
Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9200B
50GHz
SFT-9200B
43Gb/s
40GbE,
100GbE
SFT-9100
InP transistor HEMT
sft 43
Sft9100
9200B
InP HEMT transistor at 50ghz
inp hemt low noise amplifier
InP HBT transistor
mesfet low noise
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2SA562TM
Abstract: 2SC1959
Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.
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2SA562TM
2SC1959.
2SA562TM
2SC1959
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J HIGH FREQUENCY AMPLIFIER APPLICATIONS AM HIGH FREQUENCY AMPLIFIER APPLICATIONS AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm MAXIMUM RATINGS Ta = 25°C
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HN3G01J
100mA,
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transistor T04
Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
transistor T04
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
TRANSISTOR 30GHZ
TRANSISTOR C 608
Germanium Amplifier Circuit diagram
Tachyonics
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2SC4617
Abstract: SMD310
Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617/D
2SC4617
OT-416/SC
7-inch/3000
2SC4617/D*
2SC4617
SMD310
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Buffer Amplifier Ghz
Abstract: THM2004J
Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2004J
THM2004J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Buffer Amplifier Ghz
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THM2003J
Abstract: Tachyonics
Text: PRELIMINARY Wideband Linear Amplifier THM2003J SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2003J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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THM2003J
THM2003J
50-ohm
TAHB09)
30GHz
1000MHz
100MHz
Tachyonics
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MAX4373
Abstract: APP4415 MAX4373FESA AN44-15
Text: Maxim > App Notes > Amplifier and Comparator Circuits Circuit Protection Keywords: high-side current-sense amplifier, open-drain output, npn transistors, p-channel MOSFETs Aug 27, 2009 APPLICATION NOTE 4415 High-Side Current Amplifier Forms 28V Circuit Breaker
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MAX4373
MAX4373,
900mA
MAX4373:
com/an4415
AN4415,
APP4415,
Appnote4415,
APP4415
MAX4373FESA
AN44-15
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C
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HN3G01J
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BL1020
Abstract: 2SK711
Text: 2SK711 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK711 High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications • High |Yfs|: |Yfs| = 25 mS typ. · Low Ciss: Ciss = 7.5 pF (typ.)
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2SK711
O-236MOD
SC-59
BL1020
2SK711
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MPS8099
Abstract: MPS8599 IC 7410 transistor 2sc 973 AN-415 MPS8098 MPS8598
Text: MPS8098, MPS8099NPN MPS8598, MPS8599PNP SILICON COMPLEMENTARY SILICON ANNULAR AMPLIFIER TRANSISTORS COMPLEMENTARY SILICON AMPLIFIER TRANSISTORS . . . designed for general-purpose amplifier applications for audio circuits. • Collector Emitter Breakdown Voltage —
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MPS8098,
MPS8099NPN
MPS8598,
MPS8599PNP
MPS8598
MPS8099,
MPS8599
MPS8098
MPS8099
MPS8599
IC 7410
transistor 2sc 973
AN-415
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MPQ2369
Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907
Text: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.
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MPQ2369
MHQ2369
MPQ2483
MPQ2484
2N2483
2N2484
O-116
MPQ2483
MPQ2369
MHQ2906
2N2484
MPQ2484
MPQ2906
MPQ2907
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vHF amplifier module
Abstract: 2222 852 47103 PHILIPS VHF AMPLIFIER MODULE LIST ferrite rg 316 double heatsink catalogue BGY143 broadband amplifier module
Text: Philips Semiconductors Product specification VHF power amplifier module DESCRIPTION Broadband amplifier module, designed for mobile communications equipment operating directly from 12 V electrical systems. The module consists of a two stage RF amplifier using NPN transistor
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BGY143
OT132B
MRCZ73
711002b
OT132B.
vHF amplifier module
2222 852 47103
PHILIPS VHF AMPLIFIER MODULE LIST
ferrite rg 316 double
heatsink catalogue
BGY143
broadband amplifier module
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2SC4617/D SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.
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2SC4617/D
2SC4617
T-416/SC
7-inch/3000
OT-416/SC-90
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2SK710
Abstract: No abstract text available
Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK710 U nit HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • High |Yfs| : |Yfs| = 25mS Typ. Low Ciss : Ciss = 7.5pF (Typ.)
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2SK710
2SK710
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Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR H N ^ m i HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. MAXIMUM RATINGS Ta = 25°C
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HN3G01J
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Untitled
Abstract: No abstract text available
Text: BGY48A MAINTENANCE TYPE _ UHF AMPLIFIER MODULE UHF amplifier module designed for use in portable transmitters operating from a 9.6 V electrical supply. The module is a three-stage amplifier consisting of bipolar silicon npn transistors and lumped
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BGY48A
BGY48A
OT182.
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2SK709
Abstract: No abstract text available
Text: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.
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2SK709
SC-43
2SK709
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.
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2SK709
|
1J27
Abstract: 2SK70 2SK709
Text: TOSHIBA 2SK709 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK709 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • &1MAX. High |Yfc| : |Yfs| = 25mS Typ.
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2SK709
SC-43
1J27
2SK70
2SK709
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